2SC316 Search Results

2SC3163

Contextual Info: Inchange Semiconductor Product Specification 2SC3163 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage ・High speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings Ta=25℃

2SC3168

Contextual Info: SavantIC Semiconductor Product Specification 2SC3168 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·For power switching applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol

2SC373

Abstract: 2SC734 2SC1330 2SC923 2SC1000 2SC400 TO-92B 2SC1327 2SC735 2sc539
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ CASE NO. RITY MAXIMUM RATINGS H,'E Ic VcEO mW (mA) (V) min mas VcE (mA) (V) C* N.F. fx max lc mm max mas (V) (mA) (MHz) (MHz) (dB) 2SC316 2SC372 2SC373 2SC380 2SC400 N N N N N TO-18 TO-92B TO-92B TO-92B

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC3169 Features • • NPN Silicon Power Transistors Switching applications With TO-220Fa package Maximum Ratings Symbol V CEO V CBO V EBO

2SC3163

Abstract: high frequency npn transistors 400V 3A
Contextual Info: JMnic Product Specification 2SC3163 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage ・High speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings Ta=25℃

2SC3164

Contextual Info: JMnic Product Specification 2SC3164 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-247 package ・Switching power transistor ・High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol

C3163

Abstract: 1Ft TRANSISTOR T6V40F3 TRANSISTOR 1Ft
Contextual Info: N P N M v U □>/\°r7 — NPN Type Silicon Pow er T ransisto r 11 2SC3163 T6V40F3 A b s o lu te M ax. R a tin g s >ii •flc'o'^ fin. llililiil VcBO V CEO VcER V kiio J u n c tio n T e m p e ra tu re :/.UCM:. C ollecto r to B ase V oltage j .! ^ '/ y •.;. i . y

Nec K 872

Abstract: 2SD887 2sc1162 2SD883 2sc2335 2SD877 2SD756 2sd756 e 2sc3114 2SC3247
Contextual Info: - s € tt « Manuf. T y p e No. H Ä SANYO S T O SHIBA S m NEC ÍI HITACHI S ± iS FUJITSU fâ T MATSUS H I T A 2 S D 860 ✓' ta T 2SC25S2 2SD 860A te T 2SC2552 2SD 860B fâ T 2SC2552 2SD 861 «- te T 2SC2552 2SC3169 2SD 861A te T 2SC2552 2SC3169 2SD 861B

4311 mosfet transistor

Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
Contextual Info: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.

Contextual Info: 2SC3166 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC3169 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3169

Contextual Info: JMnic Product Specification 2SC3169 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High breakdown voltge APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector

tf s 544 a

Contextual Info: High Speed Sw itching Transistors F3 series Bipolartransistors NPN Parts No. EIAJ No. VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 3 1 45 500 400 7 6 2 50 10 4 100 VCEO 3164 hFE (sus) (m in) 2SC3162 3163 Electrical Characteristics Absolute Maximum Ratings

Contextual Info: 2SC3165 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3169

Contextual Info: SavantIC Semiconductor Product Specification 2SC3169 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High breakdown voltge APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1

2sc3169

Abstract: npn 2a
Contextual Info: Inchange Semiconductor Product Specification 2SC3169 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High breakdown voltge APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION

2SC3168

Contextual Info: Inchange Semiconductor Product Specification 2SC3168 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·For power switching applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol

2SC3164

Abstract: rl30a
Contextual Info: SavantIC Semiconductor Product Specification 2SC3164 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol

2SC3164

Abstract: 2sc3164 transistor
Contextual Info: Inchange Semiconductor Product Specification 2SC3164 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-247 package ・Switching power transistor ・High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter

T3V40F3

Abstract: max 323
Contextual Info: 2SC3162 T 3 V 4 F 3 í f f l í ’+ i í E 1 O u tlin e D im e n s io n s 4.8-MA.' +0 <t>3 .6 5 - 0 1 10.6MAX a7hf5-§-(ff!l) -+^¥1 oo S D a te c o d e ^ x pp^BS-i- L 3 ± o.2 132 W 5 D E I A J N o. \ s g ^ ie # "C3162 'BCE f 1 .4 —0.1 2 .4 ± 0 .3

25-TT

Abstract: 2SC3169
Contextual Info: 2SC 3169 2SC3169 *>U □ > N P N E l f ö ü y u - j - f ö / S i N P N T r i p l e D iffused P l a n a r 7 f Hign Speed Switching • ft/F e a tu re s -f > 4r4 K 6 't ft * ./ llig h *jred switching • 3 1' 9 9 ' X. I ; ?fefD C£E V ctiuti 6'IE> ‘. / L o w Vet«.»

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc3943

Abstract: 2SC4117 2sc2060 2SC2553 2SC3170 2SC4258 2SC2242 2SC3536 4181A 2SC3039
Contextual Info: - 184 - a « Type No. tt « Manuf. 2SC 4179 a a 2SC 4180 y s w 2SC 4181 m K ^ 2SC 4181A 2SC 4182 ^ H * SANYO 2SC4400 M TOSHIBA £ NEC B tL HITACHI V ± il F U J ITSU fô T MATSUSHITA 2SC4253 2SC3936 2SC4117 2SD1821 H £ MITSUBISHI 2SC4258 2SC3938 2SC4116 —