2SC4117 Search Results

2sc3943

Abstract: 2SC4117 2sc2060 2SC2553 2SC3170 2SC4258 2SC2242 2SC3536 4181A 2SC3039
Contextual Info: - 184 - a « Type No. tt « Manuf. 2SC 4179 a a 2SC 4180 y s w 2SC 4181 m K ^ 2SC 4181A 2SC 4182 ^ H * SANYO 2SC4400 M TOSHIBA £ NEC B tL HITACHI V ± il F U J ITSU fô T MATSUSHITA 2SC4253 2SC3936 2SC4117 2SD1821 H £ MITSUBISHI 2SC4258 2SC3938 2SC4116 —

BL 350-700

Abstract: 2sc4117 smd marking DL
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SC4117 Features High voltage High hFE Low noise Small package 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage

2sc4117

Abstract: 2SA1587
Contextual Info: 2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4117 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = 120 V · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · High hFE: hFE = 200~700

2SA1587

Abstract: 2SC4117
Contextual Info: 2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700

2SC4117

Contextual Info: 2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200 to 700

VQE11

Abstract: 2SA1587 2SC4117
Contextual Info: 2SC4117 TO SH IBA TOSHIBA TRANSISTOR 2 SILICON NPN EPITAXIAL TYPE PCT PROCESS S C 4 1 1 7 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS High Voltage Excellent hjpg Linearity High hpE Low Noise Complementary to 2SA1587 Small Package V C E O = 120V

Contextual Info: 2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700

2SA1587

Abstract: 2SC4117
Contextual Info: 2SC4117 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4117 ○ 低周波増幅用 ○ 低周波低雑音用 単位: mm • 小型パッケージで小型機器の設計に適しています。 • 高耐圧です。 • 電流増幅率が高い。 : hFE = 200~700

2SD1557

Abstract: SC4106 2sd1557 toshiba 2SC4211 2SC2751 2SC3170 2SC3403 2sc3807 2SC3905 2sc4654
Contextual Info: - 182 - m £ T y p e No. tt 2SC 4 1 0 M □— A 2SC 4103 □— A 2SC 4104 s % h m = m 2SC 4105 ✓ s 2 SC 4106 « Manuf. 2SC 4107 m h SANYO 2SC4406 M 2E TOSHIBA B tt N EC 2SC4117 2SC4180 2SC4250 2SC4086 HITACHI ±L 2SC2518 dr FU J I T S U ifi fâ T MATSUSHITA

Contextual Info: Reliability Tests Report Product Name: 2SC4117 Package Name: USM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

2SC1112

Abstract: 2SC4104 2SC4103 2SC4105 2SC4106 2SC4107 2SC4108 2SC4109 2SC4110 2SC4111
Contextual Info: - 188 - Â f c Ê f ë Ta=25QC,*EPIÎÎc=25,C m 2SC4103 2SC4104 2SC4105 2SC4106 2SC4107 2SC4108 2SC4109 2SC4110 2SC4ÎÎ1 2SC4112 2SC4113 2SC4U5S 2SC4116 2SC4117 2SC4118 2SC4119 2SC4120 2SC4121 2SC4123 2SC4124 2SC4125 2SC4126 2SC4129 2SC4130 2SC4131 2SC4133

Contextual Info: 2SC4117 TO SH IB A 2 S C 4 1 17 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS High Voltage Excellent hpjj; Linearity High hpE Low Noise Complementary to 2SA1587 Small Package VCEO = 120V

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4117 AU D IO F R E Q U EN C Y G E N E R A L PURPOSE A M P L I F I E R A P P L I C A T I O N S . • High Voltage: VCEO=120V • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.) • High hFE: 200-700 • Low Noise: NF=ldB(Typ.), 10dB(Max.)

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4117 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Unit in mm • Excellent h p E Linearity h F E (0.1mA)/hF E (2mA)=0.95(Typ.) • Low Noise: 200-700 990 • High hF E : Ö +T ! 2 ! 1 i ._

npn TRANSISTOR c105

Abstract: 2SA1587 2SC4117 X10-5
Contextual Info: 2SC4117 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 4 1 17 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS High Voltage Excellent hjpg Linearity High hpE Low Noise Complementary to 2SA1587 Small Package V CEO = 120V hpE (IC = 0.1mA) / hpE (Ic = 2mA)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC1571

Abstract: 2sc3828 4088B 2SC3904 4082 mitsubishi 2SC3609 2SC4082 2SC4161 K 4087 2SC4246
Contextual Info: tt SS! £ T y p e No. € Manuf. ft H SANYO 3R *£ TOSHIBA m b NEC Ä ± àfi FUJITSU fâ T M ATSUS H I T A Z £ MITSUBISHI □ — A ROHM 2SC4082 2SC4259 2SC 4068 tö 2SC 4069 h UN2217 DTCÎ 2 4 G K h UN4217 DTC124GS 2SC 4070 2SC 4071 2SC 4073 n ft =- ft

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

A1587

Abstract: 2SA1587 MARKING J1A 2SC4117
Contextual Info: TO SH IBA 2SA1587 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 587 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • Unit in mm 2.1 ± 0.1 High Voltage : V^ e q = —120V ±0.1 “•1.25 -H Excellent hjpg Linearity

2SA1587

Abstract: 2SC4117
Contextual Info: 2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1587 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V · Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) Unit: mm = 0.95 (typ.) ·

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs