2SC2404 Search Results

SMD IC MARKING GP

Abstract: 2SC2404
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SC2404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High transition frequency fT 0.55 Optimum for RF amplification of FM/AM radios +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

2SB0709A

Abstract: 2SB709A 2SC2404 XN04683 XN4683
Contextual Info: Composite Transistors XN04683 XN4683 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 3 2 0.50+0.10 –0.05 • 2SC2404 + 2SB0709A (2SB709A) Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open)

2SC2404

Contextual Info: Transistor 2SC2404 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT.

2SC2404

Abstract: XP6534
Contextual Info: Composite Transistors XP6534 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification 1 6 2 5 3 4 0 to 0.1 2SC2404 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.

SK3019

Abstract: 2sc4044s 2SC652 2SC947 BF262 2SC651 JE9016 2N270S nfe-12g 50m
Contextual Info: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 SO S5 90 JE9016E JE9016F JE9016F JE9016G JE9016G JE9016 JE9016H JE9016H JE90161 JE90161 BF262 BF200 2SC947 2SC1047 2SC2404 BF200B 2SC707 2SC2377 BF1S0 2SC761

2sc2404

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2404 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • Optimum for RF amplification of FM/AM radios

2SC2404

Abstract: XP06534 XP6534
Contextual Info: Composite Transistors XP06534 XP6534 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification 1 6 2 5 3 4 0 to 0.1 2SC2404 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.

2SB0709A

Abstract: 2SB709A 2SC2404 XN04683 XN4683
Contextual Info: Composite Transistors XN04683 XN4683 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) ● 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 1.1+0.2 –0.1 10° 2SC2404 + 2SB0709A(2SB709A)

Contextual Info: Product specification 2SC2404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High transition frequency fT 0.55 Optimum for RF amplification of FM/AM radios +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2404 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚

2SC2404

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2404 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 5˚ 0.4±0.2

351 transistor

Abstract: 2SC2404
Contextual Info: Transistor 2SC2404 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 0.40+0.10 ñ0.05 • Features 0.4±0.2 2.8+0.2 -0.3 5° ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and

2SC2404

Abstract: XN06534 XN6534
Contextual Info: Composite Transistors XN06534 XN6534 Silicon NPN epitaxial planer transistor ● 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SC2404 x 2 elements 0 to 0.1 ● (Ta=25˚C)

Contextual Info: Composite Transistors XN04683 XN4683 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 5 6 3 2 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • 2SC2404 + 2SB0709A (2SB709A) VCBO 30 V Collector-emitter voltage (Base open)

2SC2404

Contextual Info: Transistor 2SC2404 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT.

2SC2404

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2404 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ Th an W is k y Th e a pro ou Fo an po du fo

2SC2404

Abstract: SJC00114BED
Contextual Info: Transistors 2SC2404 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • Optimum for RF amplification of FM/AM radios • High transition frequency fT

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04534G Silicon NPN epitaxial planar type 高周波増幅用 • Package  Two elements incorporated into one package (Each transistor is separated)  Reduction of the mounting area and assembly cost by one half

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sC2335

Abstract: 2sc1009 2SC2534 TOSHIBA 2803 2sc2805 2SC1817A 2sc2555 2SC3151 2SC2895 2sc3153
Contextual Info: m s tt Manuf. T y p e No. ÍSS tc 2SC 2788 2SC 2789 « — « ^ $ S^NYO 2SC3040 2SC2555 2SC3277 2SC2650 X 2 X SE X ^ 2SC3151 2 SC 2794 Ä 2 2SD1682 2SC 2796 - ft 2SC 2790A 2SC 2792 2SC 2793 jf 2SC 2797 TOSHIBA 2SC3153 2SD794A & T MATSUS H I T A h m MITSUBISHI

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06534 (XN6534) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

XP06534

Abstract: 2SC2404 XP6534
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06534 (XP6534) 0.2±0.05 For high-frequency amplification 5 0.12+0.05 –0.02 4 5˚ • Features 0.2±0.1 1.25±0.10 2.1±0.1 6 Unit: mm (0.425) Silicon NPN epitaxial planar type