2SC4118 Search Results

Contextual Info: SILICON NPN EPITAXIAL PCT PROCESS 2SC4118 AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hpE Linearity: h E E (2)=25(Min.) at V c e =6V, Ic=400mA • Complementary to 2SA1588.

2SA1588

Abstract: 2SC4118
Contextual Info: TO SH IBA 2SC4118 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 4 1 18 AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 2.1 ¿0 .1 SWITCHING APPLICATIONS 1.25Í0.1 ^ in VO • • - 4 1 o Excellent hjpg Linearity : hjpg (2) = 25 (Min.)

2SA1588

Abstract: 2SC4118
Contextual Info: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

2SA1588

Abstract: 2SC4118 toshiba marking
Contextual Info: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

2SA1588

Abstract: 2SC4118
Contextual Info: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) • Complementary to 2SC4118

wy smd

Abstract: 2sc4118 MARKING WY
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4118 Features Excellent hFE linearity : hFE 2 = 25 (min) (VCE = 6 V, IC = 400 mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V

Contextual Info: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

2SC1112

Abstract: 2SC4104 2SC4103 2SC4105 2SC4106 2SC4107 2SC4108 2SC4109 2SC4110 2SC4111
Contextual Info: - 188 - Â f c Ê f ë Ta=25QC,*EPIÎÎc=25,C m 2SC4103 2SC4104 2SC4105 2SC4106 2SC4107 2SC4108 2SC4109 2SC4110 2SC4ÎÎ1 2SC4112 2SC4113 2SC4U5S 2SC4116 2SC4117 2SC4118 2SC4119 2SC4120 2SC4121 2SC4123 2SC4124 2SC4125 2SC4126 2SC4129 2SC4130 2SC4131 2SC4133

Contextual Info: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

2SA1588

Abstract: 2SC4118 JEDEC SC-70
Contextual Info: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • · Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4118 A UDI O FREQUENCY LOW POWER AMPLIFI ER APPLICATIONS. DRIVER STAGE AMPLIFI ER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent h F g Linearity: h F E 2 = 2 5 (Min.) at V c e = 6V, Ic=400mA • C omplementary to 2SA1588.

Contextual Info: 2SA1588 SILICON PNP EPITAXIAL TYPE A UDI O FREQUEN CY LOW POWER A M PLI FIE R APPLICATIONS. DRIVER STAGE A M PLI FIE R A PPL ICATIONS. SWITCHING APPLICATIONS. • Excellent h p g Linearity: at hp£ 2 =25 (Min.) V c e = - 6 V , Ic = -4 0 0 m A • Complementary to 2SC4118

2SA1588

Abstract: 2SC4118
Contextual Info: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

2SA1588

Abstract: 2SC4118
Contextual Info: 2SC4118 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4118 ○ 低周波小電力増幅用 ○ 励振段増幅用 ○ スイッチング用 単位: mm • 直流電流増幅率の電流依存性が優れています。 •

2sc4118

Abstract: marking IAY 2SA1588
Contextual Info: TOSHIBA 2SC4118 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 4 1 18 AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS Excellent hjpg Linearity hFE(2) = 25 (Min.) (VCE = 6V, IC = 400mA)

Contextual Info: 2SC4118 TO SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 4 1 18 Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 2.1 SWITCHING APPLICATIONS • Excellent hp^ Linearity : hpj; (2) = 25 (Min.)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SA1588

Abstract: 2sc4118
Contextual Info: 2SA1588 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1588 ○ 低周波小電力増幅用 ○ 励振段増幅用 ○ スイッチング用 • 単位: mm 電流増幅率の電流依存性が優れています。 : hFE (2) = 25 (最小) (VCE = −6 V, IC = −400 mA)

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

4946

Abstract: me 4946 4947 2SC5020 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
Contextual Info: - m % a « T y p e No. Manuf. = æ SANYO 2SC 4930 2SC 4931 z 2SC 4932 S 2SC 4933 2SC 4934 ^ 2SC 4935 3L 23C 4336 — 2SC 4940 — f 2 :v- NEC ÏZ. HITACHI s ± il FUJITSU ta t M ATSUS H I T A 2SC4838 ZdLOUUO 2SC4808 2SC4805 2SD2228 2SD1820 2SC3440 2SC4211

2SC1571

Abstract: 2sc3828 4088B 2SC3904 4082 mitsubishi 2SC3609 2SC4082 2SC4161 K 4087 2SC4246
Contextual Info: tt SS! £ T y p e No. € Manuf. ft H SANYO 3R *£ TOSHIBA m b NEC Ä ± àfi FUJITSU fâ T M ATSUS H I T A Z £ MITSUBISHI □ — A ROHM 2SC4082 2SC4259 2SC 4068 tö 2SC 4069 h UN2217 DTCÎ 2 4 G K h UN4217 DTC124GS 2SC 4070 2SC 4071 2SC 4073 n ft =- ft

te 1819

Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g