2SC4805 Search Results

4946

Abstract: me 4946 4947 2SC5020 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
Contextual Info: - m % a « T y p e No. Manuf. = æ SANYO 2SC 4930 2SC 4931 z 2SC 4932 S 2SC 4933 2SC 4934 ^ 2SC 4935 3L 23C 4336 — 2SC 4940 — f 2 :v- NEC ÏZ. HITACHI s ± il FUJITSU ta t M ATSUS H I T A 2SC4838 ZdLOUUO 2SC4808 2SC4805 2SD2228 2SD1820 2SC3440 2SC4211

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For 2 GHz band low-noise amplification • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3S

2SC4805

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805G Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3S • Pin Name 1: Base 2: Emitter

2SC4805

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 3

2SC4805

Contextual Info: Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805G Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3S • Pin Name 1: Base 2: Emitter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10

2SC4795

Abstract: 2SC4792 2sc4786 2sc4831 2SC4833 2SC4769 2SC4770 2SC4774 2SC4812 2SC4776M
Contextual Info: - 214 - Ta=25eC, *EP(àTc=25tï m 2SC4769 2SC411C 2SC4774 2SC4775 2SC4776M 2SC4777 2SC4778 2SC4779S 2SC4782 2SC4783 2SC4786 2SC4787 2SC4789 2SC4792 2SC4795 2SC4796 2SC4797 2SC4799 2SC4800 2SG4801 2SC4802 2SC4803 2SC4805 2SC4810 2SC4811 2SC4812 2SC4813 2SC4815

TRANSISTOR NPN 5GHz

Abstract: 2SC4805 transistor frequency 1.5GHz gain 20 dB
Contextual Info: Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and

2SC4805

Contextual Info: Transistors 2SC4805 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification 0.425 Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10 0.9±0.1 3 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SC4795

Abstract: 2SC4834 SC-59A 2SC4779 2sc4786 2SC4769 2SC4770 2SC4774 2SC4792 2SC4776M
Contextual Info: 215 - iS MHz Vce (V) 5 12 12 12 12 12 10 6 300 10 800 10 7000 150* 150* 120* 2000* 400* 50 13* 13* 120* 8 10 10 10 5 10 20 10 14 (Ta=25‘C) SW Time Cob Cre tf tstg (max) (max) (A) (m s ) ( m s ) (PF) (pF) 3 0.2 3 0.2 0.01 1.7 -0.002 3.5 -0.002 3.5 -0.002

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2sc4780

Abstract: A1531A 2SC4661 2SC4670 MA141K 2SC4239 2SD1819 R A745W
Contextual Info: —5/ S Mini Type 3-pin Package Outline Transistors, Diodes Unit : mm 2 1 ± 0.1 1.25 ± 0.3 0.425 m uw l S = - S ( 3 S i ) / N - 7 ^ - - v l i . S t # W 5 - S ( 3 i f f i i ) ^ 0y ^ - v £ i u 5 - ^ ( 3 « ^ ) ¿ lP lli< 7 ) 1 4 f ! li H I # L fc . h 7 > v '7 , i? .

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC4470

Abstract: 4892 2sc3904 2SC3356 2SC3609 2sc3828 2SC4901 2SC3585 2sc3613 2SC4928
Contextual Info: - m £ 2SC 4856 2SC 4857 2 SC 4858 % tt Manuf. T y p e No. = SANYO >¥ =n =# 2 SC 4859 2SC 4860 2SC 4861 2SC 4862 2 SC 4863 2SC 4866 2SC 4867 2SC 4868 2SC 4869 2 m B NEC 2SC3937 2SC4904 2SC3704 2SC3609 2SC4093 2SC4900 2SC3704 2SC4228 2SC4903 2SC3585 2SC4902

2SC2038

Abstract: 4835 4816 2SD1415 4808 4828 4833 2SC4328 2SC4516 2sc4834
Contextual Info: - 200 - a tt « 2SC 4810 2 SC 4811 2SC 4815 2SC 4816 2SC 4817 2 SC 4818 2SC 4835 2SC 4836 2SC 4837 2SC 4839 2SC 4840 2SC 4841 2SC 2SC 2SC 2SC 2SC 2SC 4842 4843 4844 4845 4846 4847 2SC 4848 2SC 4849 2SC 4850 2SC 2SC 2SC 2SC 2SC 4851 4852 4853 4854 4855 H ft

2SC3998

Abstract: 2sc4640 4793 2SC1815 2sd637 2sc2555 2SC4804 C4463 4802 2SD1546
Contextual Info: - m « Type No. a € Manuf. H * SANYO X £ TOSHIBA B Is NEC B 3¿ HITACHI S ± Ä FUJITSU fâ T MATSUSHITA 2SC 4773 □— A 2SC4406 2SC4244 2SC4463 2SC3932 2SC 4774 * □— A 2SC4407 2SC4250 2SC44S3 2SC4670 2SC 4775 □— A 2SC 4776 □— A 2SC4640 2SC1815