2SC46 Search Results

ic 748

Abstract: 2SC4688
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1805 POW ER AM PLIFIER APPLICA TIO N S U n it in mm j 1 5 .8 ± 0 .5 | • C om p lem en tary to 2SC4690 • R ecom m end for 70W H ig h F id e lity A udio F req u en cy A m plifier •n 3.6 MAX { o u tp u t S tage. RATING

2SC4658

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4658 HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS Unit in mm FEATURES: • Excellent hj-E linearity : hFE=100~320 at VCE=1V, IC=1A • Low Collector Saturation Voltage : vCE sat = 0 -*v (Max.) at Ic=3A, Ib =0.15A

NPN VCEo 1000V

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC4686/4686A TV D Y N A M I C F O C U S A P P L I C A T I O N S . U n i t in m m H IG H V O L T A G E S W I T C H I N G A P P L I C A T I O N S . 10±0.3 , H IG H V O L T A G E A M P L I F I E R A P P L I C A T I O N S .

Contextual Info: 2SA1805 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1805 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC4690 • Recommended for 70 W high fidelity audio frequency amplifier output

2SA1803

Abstract: 2SC4688
Contextual Info: JMnic Product Specification 2SA1803 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4688 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage PINNING see Fig.2

2SA1804

Abstract: TO3PFM 2SC4689 Jmnic
Contextual Info: JMnic Product Specification 2SA1804 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4689 APPLICATIONS ・Power amplifier applications ・Recommend for 55W high fidelity audio frequency amplifier output stage PINNING See Fig.2

2SA1804

Abstract: 2SC4689
Contextual Info: Product Specification www.jmnic.com 2SC4689 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFM package ・Complementary to 2SA1804 ・Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS ・Power amplifier applications PINNING PIN

2SC3645

Contextual Info: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page

2SC4645

Abstract: 2SA1785
Contextual Info: Ordering number: E N 351ÎA SANYO N 0 .3 5 1 1 A I 2SA1785/2SC4645 2SA1785.PNP Epitaxial Planar Silicon Transistor 2SC4645:NPN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications Features • Large current capacity Ic= 1A • High breakdown voltage (Vce O—400V)

Contextual Info: General Purpose Transistor 50V, 0.15A 2SA1774EB Applications General purpose small signal amplifier. Dimensions (Unit : mm) EMT3F Features 1) Excellent hFE linearity. 2) Complements the 2SC4617EB. 1.6 0.7 (1) 0.5 0.5 1.0 0.45 (3) 0.37 Structure

2SC4679

Contextual Info: TO SH IB A 2SC4679 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4679 HDTV CHROM A OUTPUT APPLICATIONS. U nit in mm VIDEO OUTPUT STAGE IN HIGH RESOLUTION DISPLAY. ¿3.1 ±0.1 5.8 • High Transition Frequency : fp = 240MHz • Small Collector Output Capacitance

3701A

Abstract: 2SC4632
Contextual Info: Ordering num ber: EN 3701A 2SC4632 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications F e a tu r e s • High breakdown voltage V qeo min = 1200V . • Sm all Cob (typical Cob = 1.6pF). •Full-isolation package.

marking C5

Contextual Info: UTC 2SC4617 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Low Cob Cob=2.0pF typ * Complements the UTC 2SA1774 1 MARKING 2 3 C5 SOT-523 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL RATINGS

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1761 U nit in mm POWER AMPLIFIER APPLICATIONS. POW ER SW ITCHING APPLICATIONS. • • • Low Collector-Emitter Saturation Voltage : v CE sat = - 0.5V (Max.) (Ic = - 1.5A) High Speed Switching Time : tstg = 0.2(u s (Typ.) Complementary to 2SC4604.

2SC4662

Contextual Info: Inchange Semiconductor Product Specification 2SC4662 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

2SC4667

Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4667 Features High transition frequency: fT = 400 MHz typ. Low saturation voltage: VCE (sat) = 0.3 V (max) High speed switching time: tstg = 15 ns (typ.) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

npn smd 2a

Abstract: 300V transistor npn 2a TRANSISTOR VCE 400V 500mA 2SC4616
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffused Type Transistor 2SC4616 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1

Contextual Info: Transistors SMD Type Product specification 2SC4600 TO-263 1 .2 7 -0+ 0.1.1 Features Unit: mm Surface mount type device making the following possible. +0.1 1.27-0.1 +0.2 4.57-0.2 Reduction in the number of manufacturing processes Small size of 2SC4600-applied equipment.

C4684

Abstract: 2SC4684 IC-106 05A800
Contextual Info: 2SC4684 東芝トランジスタ シリコンNPNエピタキシャル形 2SC4684 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE 1 = 800~3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)

2SC4682

Contextual Info: 2SC4682 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4682 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 800 to 3200 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 500 (typ.) (VCE = 1 V, IC = 3 A)

2SC4666

Contextual Info: 2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4666 Audio Frequency Amplifier Applications Switching Applications • • • • Unit: mm High hFE: hFE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max)

T44E

Abstract: "RF Power Amplifiers" 2SC4624 N15W z3 transistor transistor z3 RF NPN POWER TRANSISTOR 3 GHZ 5w
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE D ESC R IPTIO N 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEA TU R ES • High power gain : Goe S 4.7dB, Po S 45W

2SC4691J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-speed switching 0.12+0.03 –0.01