2SA1419 Search Results

C3649

Abstract: CQ 419 2007a 2SA1419 2SC3649 SC3649 2SA419
Contextual Info: Ordering number: EN 2007A 2SA1419/2SC3649 PNP/NPN Epitaxial Planar Silicon Transistors H igh-V oltage Sw itching A pplications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity . Very small size making it easy to provide high-density hybrid ICs

2SC3649

Abstract: 2SA1419
Contextual Info: 2SA1419 / 2SC3649 注文コード No. N 2 0 0 7 B 三洋半導体データシート 半導体ニューズ No.N2007A をさしかえてください。 2SA1419 / 2SC3649 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチング用

Contextual Info: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

Contextual Info: SMD Type Product specification 2SA1419 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO

2007A

Abstract: 2sc3649
Contextual Info: Ordering number : EN 2 0 0 7 A J SA\YOI J r / 2SA1419/2SC3649 No.2007A PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity . Very small size making it easy to provide high-density hybrid ICs

Contextual Info: Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

2SC3649

Abstract: 2SA1419
Contextual Info: Ordering number:EN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Very small size making it easy to provide highdensity hybrid ICs.

Contextual Info: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity

Contextual Info: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

SMD iC MARKING AE

Abstract: 2SA1419 ae marking
Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SA1419 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage

2SC3649

Abstract: ITR03571 ITR03572 2SA1419
Contextual Info: Ordering number:ENN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide highdensity hybrid ICs.

Contextual Info: 2SA1419T Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)180 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)500m

2SC3649

Abstract: 2SA1419 ITR03571 2SA141
Contextual Info: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

Contextual Info: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 Features PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of FBET, MBIT processes High breakdown voltage and large current capacity

transistor b985

Abstract: transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892
Contextual Info: SAfÊYO PCP Power Chip Pack Transistor Series ale, F e a t u r e s ♦ Very small size making it possible to provide high-densi ty. small-sized hybrid lCs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

STK412-750

Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
Contextual Info: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc

2SA1281

Abstract: 2SA1281C 2NS401 2SA949Y 2SA429G 2SA1013-0 C 2N4888 2SA429GTM 2SA429 2SA778AK
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number S 10 >= AST5401 2NS401 S05401 TMPT5401 2SA429 2SA940 2SA778K 2SA949 2SA429G-TM-0 2SA12000 lS 20 2S 30 -40 45 SO ~:dl~~r:C PN4888 PN4888 PN4889 PN4889 PN4889 2N4888 2SA916 2SA916 FairchildSC CentralSemi FairchildSC

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2SA1410

Abstract: 2-7D101A 2SA1441 2SA1409 HV COB 2SA1407 2SA1408 2SA1412 2SA1412-Z 2SA1413
Contextual Info: - 34 - <Ta=25'C.*EniiTc=25‘ Ç & £ s iê VcBO V) VCEO (V) lc (D C ) (A) Pc m Pci (W) ICBO (W) M fà ft 1É (Ta=25‘ C) , hF (/¿A) VcB (V) Vct (V) (A) [*EP[âtypüf] , (V) > , , V le (A) (V) Ib (A) 2SA1406 CRT Vout -200 -200 -0.1 1. 2 7 -0.1 -150 40

C3117

Abstract: transistor b764 TRANSISTOR D400 transistor D1207 s transistor b985 TRANSISTOR D1347 B892 D1207 s Transistor d1153 B985
Contextual Info: SA0YO P C P Power C h i p Pack o te Transistor Series C a s e s F* s at ur* ♦ Very small size making it possible to provide high-densi ty, small-sized hybrid ICs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.

2SB1013

Abstract: 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564
Contextual Info: 60 - $! tt « Type No. 2SB 1013 v 2SB 1014 ^ 2S8 1015 - 2SB 1016 , 2SB 1017 2SB 1018 2SB 1019 « Manuf. -_ 3IC SANYO H. S S TOSHIBA b m NEC ±L HITACHI m ± FU JITSU i3 T fc' MATSUSHITA = m M IT SU B ISH I □ - Jx ROHM 2SA1160 2SB1068 2SB976 2SB1426 2SA1020

2SC3660A

Abstract: 2SC3660 2SC3654 2SC3629 2SC3631 2SC3631-Z 2SC3632 2SC3632-Z 2SC3636 2SC3637
Contextual Info: - 166 - Ta=25cC, *EP(áTc=25°C m « a 2SC3629 35 s Ä HF PA VcBO VcEO Ic(DO Pc Pc* I c BO (V) (V) (A) (W) (W) <*A> 20 1 % S /\IU 1• \hF 'UB (V) 5 200 4# 14 (Ta=25t;) E \i* a a / U*s\ Ic / I e "(V)' (A) (V) [lEPtttypffi] (V) Ic (A) Ib (A) ZSC3631 a m H V HS PSf