2SB1067 Search Results

2SB1067

Contextual Info: 2SB1067 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 2 S B 1 067 MICRO MOTER DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : hpE = 2000 (Min.) (V'ce = - 2V, 1q = - 1A)

b1067

Abstract: 2SB1067
Contextual Info: 2SB1067 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1067 Industrial Applications Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)

b1067

Abstract: 2SB1067 200-ATC equivalent transistor
Contextual Info: 2SB1067 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1067 Industrial Applications Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)

2SB1067

Contextual Info: TO SH IBA 2SB1067 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 2 S B 1 067 MICRO MOTER DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 8.3 MAX. ^3.i±ai —i—¡

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SB1067 DARLINGTON POWER M ICRO M O TER DRIVE, HAMMER DRIVE APPLICATIONS. S WITCHING APPLICATIONS. POWER AMPL I F I E R APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES : . High DC Current Gain: hFE=2000(Min. ) (VcE=-2V, Ic=-1A)

2SB1067

Contextual Info: TO SHIBA 2SB1067 TOSHIBA TRANSISTOR 2 S B 1 067 SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER MICRO MOTER DRIVE, H AM M ER DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS SWITCHING APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hFE = 2000 (Min.) (VCE = -2 V , IC= - 1A)

Contextual Info: TO SHIBA 2SB1067 TOSHIBA TRANSISTOR nRi nf i 7 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER MICRO MOTER DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS. jZ fS .l+ 0 .1 • High DC Current Gain

2SB1067

Contextual Info: 2SB1067 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 2 S B 1 067 MICRO MOTER DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 8 .3 MAX . High DC Current Gain

b1067

Abstract: 2SB1067
Contextual Info: 2SB1067 シリコンPNPエピタキシャル形 ダーリントン接続 東芝トランジスタ 2SB1067 ○ マイクロ・モータドライブハンマ・ドライブ用 ○ スイッチング用 ○ 電力増幅用 • • 単位: mm 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −2 V, IC = −1 A)

b1067

Abstract: B-1067 2SB1067
Contextual Info: 2SB1067 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1067 Industrial Applications Micro-Moter Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)

2SD2449

Abstract: 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799
Contextual Info: Darlington Transistors F1 W c E O 30V 50V 60V 80V 100V 160V 250V 300V 400V 450V 2SC982TM 0.3A 1.SA 40V 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB1067 2SD1658 2A 2SD1509 2SD2088 2SD2208 2SB1411 2SD2206 2SB1457 2SB1617 2SD2480 2SB677 2SD687 3A 4A SA 2SD2129

Contextual Info: 2SB1067 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER INDUSTRIAL APPLICATIONS Unit in mm M IC R O M O T E R DRIVE, H A M M E R DRIVE APPLICATIONS. SW ITCH IN G APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. • • e)3.i±ca u High DC Current Gain : hpE = 2000 (Min.) (Vc e = -2V , I c = -1A )

Contextual Info: 2SB1067 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1067 Industrial Applications Micro-Moter Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)

B1067

Abstract: 2SB1067 B-1067
Contextual Info: 2SB1067 シリコンPNPエピタキシャル形 ダーリントン接続 東芝トランジスタ 2SB1067 ○ マイクロ・モータドライブハンマ・ドライブ用 ○ スイッチング用 ○ 電力増幅用 • • 単位: mm 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −2 V, IC = −1 A)

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

C3182N

Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn

2SC3424

Abstract: 80240 2SA1361
Contextual Info: -3 5 TO-126 ( j S ) PACKAGE S E R IE S o n T0-126<JSD JZ IffH. —“ CD o (0 N ro ' in i° Application . . VCEQ Type No. v PNP NPN Audio Drive T V Chroma Out I 'V I 2SC3423 j 2SC3424 2SA1360 T V Chroma Out v 2SC3619 I 1 2SA1361 • T V Chroma Out |

C3422

Abstract: AAAM strobo 2SC3420 2SD1508 2SD1509
Contextual Info: Powered T O -1 26 ¡ D O CO N N tn O Application Electronic-Library •c v CEO '-/P&'V. Type No. NPN PNP Ì Audio Drive 2SC3423 ! 2SA1360 T V Chroma Out 2SC3424 ! 2SA1361 . .1 (A VcE*(sat) w VX. ;W frp g,'. •' Tc=2?C V CE >C (V) (W> (V) (A) >c (V> (A)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811