2SD1658 Search Results

transistor D1658

Abstract: d1658 2SD1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

d1658

Abstract: transistor D1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

d1658

Abstract: 2SD1658
Contextual Info: 2SD1658 シリコンNPNエピタキシャル形 ダーリントン接続 東芝トランジスタ 2SD1658 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 単位: mm 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)

d1658

Abstract: 2SD1658 Vbe 8 V K800
Contextual Info: 2SD1658 シリコンNPNエピタキシャル形 ダーリントン接続 東芝トランジスタ 2SD1658 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 単位: mm 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)

d1658

Abstract: transistor D1658 2SD1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

Contextual Info: TOSHIBA 2SD1658 2 S D 1 658 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON MICRO MOTOR DRIVE, H A M M ER DRIVE APPLICATIONS Unit in mm SWITCHING APPLICATIONS 8.3MAX. 5.0 PO W ER AM PLIFIER APPLICATIONS • • High DC Current Gain : hjrg = 2000 (Min.)

2SD1658

Abstract: 0524
Contextual Info: TO SH IBA 2SD1658 2 S D 1 658 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS Unit in mm SWITCHING APPLICATIONS 43.1 ± 0 . 1 POWER AMPLIFIER APPLICATIONS • • • V S -' VJ High DC Current Gain : hjPE = 2000 (Min.)

transistor D1658

Abstract: d1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

Contextual Info: SILICON NPN T R IP LE DIFFU SED T Y P E DARLINGTON POWER 2SD1658 INDUSTRIAL APPLICATIONS MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain : hFE=2000(Min.) (Vc e =2V, Ic=lA)

Contextual Info: SILICON NPN EPITAXIAL TYPE DARLINGTON POWER 2SD1658 INDUSTRIAL APPLICATIONS Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain : hfE=2000(Min.) (Vc e =2V, Ic=lA)

transistor

Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
Contextual Info: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N

2SD1658

Contextual Info: TOSHIBA 2SD1658 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON 2 S D1 6 5 8 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS U nit in mm SWITCHING APPLICATIONS 53.1 ±0.1 5.5 POWER AMPLIFIER APPLICATIONS High DC C urrent Gain : hjr^ —2000 (Min.)

transistor D1658

Abstract: d1658 2SD1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

2SD2449

Abstract: 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799
Contextual Info: Darlington Transistors F1 W c E O 30V 50V 60V 80V 100V 160V 250V 300V 400V 450V 2SC982TM 0.3A 1.SA 40V 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB1067 2SD1658 2A 2SD1509 2SD2088 2SD2208 2SB1411 2SD2206 2SB1457 2SB1617 2SD2480 2SB677 2SD687 3A 4A SA 2SD2129

Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

ic 1105

Abstract: 2SD1658
Contextual Info: TO SH IBA 2SD1658 2 S D 1 658 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hjPE = 2000 (Min.) Low Saturation Voltage

transistor D1658

Abstract: 2SD1658 D1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *