2SD1412 Search Results

2SB1019

Abstract: 2SD1412
Contextual Info: JMnic Product Specification 2SB1019 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1412 APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING PIN DESCRIPTION

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

4336

Abstract: 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847 2SC3142
Contextual Info: m « tt T y p e No. 2SC 4324 2SC 4325 2SC 4326 H € ✓ & SANYO Manuf. x s x s 2SC4871 □ —A 2SC3142 S TOSHIBA m. b NEC B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A 2SC2735 2SC2847 2SD1412 2SD1444 2SC 4328 S a 2SC3258 2SC3869 2SC 4329

2SD1412A

Contextual Info: 2SD1412A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications • Unit: mm Low saturation voltage: VCE sat = 0.4 V (max) at IC = 4 A Absolute Maximum Ratings (Tc = 25°C) Characteristics

2SD1412

Abstract: 2SB1019 nhjt
Contextual Info: TOSHIBA { D I S C R E T E / O P T 0> 9097250 TOSHIBA ~SÍ 56C { D ISCRETE/O PTO DE I ^ O T T E S O DOCmSM 07954 2SD1412 SILICON NPN TRIPLE DIFFUSEDTYPE Unit in tnm HIGH CURRENT SWITCHING APPLICATIONS.' POWER AMPLIFIER APPLICATIONS. FEATURES: IQ 3H A X .

ic 353

Abstract: IC353
Contextual Info: 2SB1019 SILICON PNP EPITAXIAL PLANAR TYPE INDUSTRIAL APPLICATIONS U nit in mm HIGH C U R R E N T SW ITC H IN G A PPLICA TIO N S. P O W E R AMPLIFIER A PP LIC A TIO N S. • • ? Low Collector Saturation Voltage : v CE sat = -0.4V (Max.) at Ic = -4 A Complementary to 2SD1412

Contextual Info: 2SD1412 SILICON NPN TRIPLE DIFFUSED TYP E INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 10.3 MAX. POWER AMPLIFIER APPLICATIONS. 03.2±O. 2 FEATURES: . Low Saturation Voltage : VcE sat =0-4V(Max.) U s at Ic=4A . Complementary to 2SB1019

2SC5072

Abstract: 2SC4698 4685 4686 2SC470-3 2SC4703 4670K 2SC4001 2SC4176 2SC4443
Contextual Info: - 196 - m s T y p e No. 2 SC 4666 tt « Manuf. J z B m SANYO TOSHIBA K S. 2SC 4667 Ä S. 2SC4443 2SC 4668 S tB ä 2SC4523 2SD1412 » S tc 2SC4406 2SC4250 2SC 4669 > fö T 2SC 4670 2SC 4671 / = 2SC 4672 □— A = 2SC 4674 B 4 "" # 2SC 4678 ÜL S. 2SC 4679

2SD1412A

Contextual Info: T O S H IB A 2SD1412A T O SH IBA TRANSISTO R SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 4 1 2A HIGH CURRENT SW ITCH ING APPLICATIO NS PO W ER AM PLIFIER APPLICATIO NS Low Saturation Voltage : sat = 0.4V (Max.) at Iq = 4A INDUSTRIAL APPLICATIONS Unit in mm

2SB1019

Abstract: 2SD1412
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1019 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1412 APPLICATIONS ·High current switching applications.

2SB1019

Abstract: 2SD1412
Contextual Info: SavantIC Semiconductor Product Specification 2SB1019 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1412 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING

2SB1019

Abstract: 2sb101 2SD1412
Contextual Info: Inchange Semiconductor Product Specification 2SB1019 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1412 APPLICATIONS ・High current switching applications ・Power amplifier applications

2SD1412A

Contextual Info: TO SH IBA 2SD1412A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 4 1 2A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS 10 ± 0.3 Low Saturation Voltage * V c e sat = Collector-Base Voltage

g3je

Abstract: 2SB1019
Contextual Info: y 'j 3 >PNP=M fôf$ pcTM o -f 7f 2SB1019 ym > if I - o P ? v m títfjíh 3 3 : IC = - 7 A ? lä io a i± ^ 'ig ;^ 0 : VcE(sat) = - 0 .4 V ( f t *) ( I C = -4A ) 2SD1412 t 3 > 7 " 'J ^ > ? >; (; 4- 19 £ - f 0 ft*Æ :fê (T a = 25°C) Il 3 L' 5 3 •^ - X Psi m a

D1412A

Abstract: 2SD1412A D1412
Contextual Info: 2SD1412A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications • Unit: mm Low saturation voltage: VCE sat = 0.4 V (max) at IC = 4 A Maximum Ratings (Tc = 25°C) Characteristics Symbol

Contextual Info: TOSHIBA 2SD1412A 2 S D 1 4 1 2A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS PO W ER AM PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 ^3.2 ±0.2 2.7Ì0.2 Low Saturation Voltage : V^E s a t = 0-4V (Max.) at I0 = 4A

2SB1019

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1019 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1Q.3MAX, POWER AMPLIFIER APPLICATIONS. FEATURES: . Low Collector Saturation Voltage : VCE sat =-0.4V(Max.) at I c =-4A . Complementary to 2SD1412

2SD1412

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1412 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1Q3MAX. POWER AMPLIFIER APPLICATIONS. 03.2±Q2 FEATURES: . Low Saturation Voltage : VcE sat = 0 •4 V ( M a x .) at Ic=4A . Complementary to 2SB1019

D1412A

Abstract: 2SD1412A d1412
Contextual Info: 2SD1412A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications • Unit: mm Low saturation voltage: VCE sat = 0.4 V (max) at IC = 4 A Absolute Maximum Ratings (Tc = 25°C) Characteristics

Contextual Info: TOSHIBA nnuD A T O SH IBA TRANSISTOR 2SD1412A SILICON PNP TRIPLE DIFFUSED TYPE mm mmr u m m m HIGH CURRENT SW ITCHING APPLICATIONS POW ER AM PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm £Y J'L .2 ±0 .2 10 ± 0.3 Low Saturation Voltage : V ç e §at = 0.4V (Max.) at Iç = 4A

2SD1412A

Abstract: laf 001
Contextual Info: TO SH IBA 2SD1412A TOSHIBA TRANSISTOR 2 S SILICON NPN TRIPLE DIFFUSED TYPE D 1 4 1 2 A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS r 10 ±0.3 ^3.2 ± 0.2 -5 y < of ml ÍY^ • 1.1 MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157