2SC3419 Search Results

C3419

Abstract: 2SC3419 2SA1356
Contextual Info: 2SC3419 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3419 ○ 中電力増幅用 • 単位: mm : VCE (sat) = 0.25 V (標準) 飽和電圧が低い。 • コレクタ損失が大きい。: PC = 1.2 W (Ta = 25°C) • 2SA1356 とコンプリメンタリになります。

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

2SC3419

Abstract: 2SA1356
Contextual Info: 2SC3419 TO SH IBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS MEDIUM POWER AMPLIFIER APPLICATIONS. • • • Low Saturation Voltage : VCE (sat) “ 0.25V (Typ.) (In = 500mA, Ig = 50mA) High Collector Power Dissipation : P0 = 1.2W (Ta = 25°C)

2SC1216

Abstract: sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2SC2320L 2sc1162
Contextual Info: - 11 2 - ñ £ tt Type No. * 2SC 1343 H B 2SC 1344 B 2SC 1345 B 2SC 1345K « Manuf. a & h TOSHIBA 2SC1570 2SC732TM 2SC1842 2SC1570 2SC732TM 2SC1843 2SC2001 ÍI ÍL ÎL íL m b SANYO NEC 2SD734 2SC3419 * 2SC 1347 fé T 2SC2274 2SC3419 * 2SC 1354 fé T * 2 SC 1358

2SC3419

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3419 MEDIMUM POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: 03.i±ai . Low Saturation Voltage : VcE sat =0.25V(Typ.) (Ic=500mA, •2 lB=50mA) . High Collector Power Dissipation : Pc=1.2W (Ta=25°C) . Complementary to 2SA1356

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS A U D IO PO W ER AM PLIFIER APPLICATIONS. • • • Low Saturation Voltage : v CE(sat) = -0 .3 2 V (Typ.)(Ic = -500m A , Ig = -50m A ) High Collector Power Dissipation : P c = 1.2W (Ta = 25°C) Complementary to 2SC3419

c3419

Abstract: 2SC3419 2SA1356 MA61
Contextual Info: 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3419 Medium-Power Amplifier Applications. Unit: mm • Low saturation voltage: VCE (sat) = 0.25 V (typ.) • High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SA1356

c3419

Contextual Info: 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3419 Medium-Power Amplifier Applications. Unit: mm • Low saturation voltage: VCE (sat) = 0.25 V (typ.) • High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SA1356

Contextual Info: TOSHIBA 2SC3419 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS. 8.3 MAX. • Low Saturation Voltage : VCE (sat)= 0.25V (Typ.) (Ic = 500mA, Ig = 50mA) High Collector Power Dissipation : P q = 1.2W (Ta = 25°C)

2SA1356

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1356 AUDIO POWER AMPLIFIER APPLICATIONS. Unit in FEATURES; . L o w S a turation Voltage : V CE sat =-0.32V(Typ.) (Ic=-500mA, . H i g h Collector Power D i s sipation IB=-5CtaA) : P c =1.2W (Ta=25°C) . C omplementary to 2SC3419

2SC3419

Abstract: 2SA1356
Contextual Info: TOSHIBA 2SC3419 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS. • 53.1 ±0.1 Low Saturation Voltage : VCE (Sat) —0.25V (Typ.) (1^ = 500mA, lB = 50mA) High Collector Power Dissipation : P0 = 1.2W (Ta = 25°C)

Contextual Info: 2SC3419 TOSHIBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS. • • • m ä" ìli 1.0MAX. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage

2SA1356

Abstract: 2SC3419
Contextual Info: 2SC3419 TO SH IBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS MEDIUM POWER AMPLIFIER APPLICATIONS. • • • Low Saturation Voltage : VCE (sat) “ 0.25V (Typ.) (In = 500mA, Ig = 50mA) High Collector Power Dissipation : P0 = 1.2W (Ta = 25°C)

2SA135

Abstract: 2SA1356 2SC3419
Contextual Info: 2SC3419 TOSHIBA 2SC3419 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm MEDIUM PO W ER AM PLIFIER APPLICATIONS. • • • m ä" Hi 1.0MAX. M A XIM U M RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage

c3419

Abstract: 2SC3419 2SA1356
Contextual Info: 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3419 Medium-Power Amplifier Applications. Unit: mm • Low saturation voltage: VCE (sat) = 0.25 V (typ.) • High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SA1356

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

2SC3424

Abstract: 80240 2SA1361
Contextual Info: -3 5 TO-126 ( j S ) PACKAGE S E R IE S o n T0-126<JSD JZ IffH. —“ CD o (0 N ro ' in i° Application . . VCEQ Type No. v PNP NPN Audio Drive T V Chroma Out I 'V I 2SC3423 j 2SC3424 2SA1360 T V Chroma Out v 2SC3619 I 1 2SA1361 • T V Chroma Out |

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC3421

Abstract: 2sd526 2SC46C 2SC4614 2SD467 2SC3423 2SC503 2sc2233 2sc2061 2SC2235
Contextual Info: m % Type No. * 2SC 477 * 2SC 478 * 2SC 481 ' * 2SC 483 * 2SC m / * 2SC 485 . * 2SC 4ÖÖ *- 2SC * 2SC * 2SC * 2SC * 2SC * 2SC * 2SC * 2SC 2SC * * 489 490 491 / 492 493 X 494 z 1' 495 *' 436 - 1' 497 # 2SC 2SC * 2SC * 2SC 500 * 502 ^ 503 .r 504 Í * 505 *"•

2sc3943

Abstract: 2SC4117 2sc2060 2SC2553 2SC3170 2SC4258 2SC2242 2SC3536 4181A 2SC3039
Contextual Info: - 184 - a « Type No. tt « Manuf. 2SC 4179 a a 2SC 4180 y s w 2SC 4181 m K ^ 2SC 4181A 2SC 4182 ^ H * SANYO 2SC4400 M TOSHIBA £ NEC B tL HITACHI V ± il F U J ITSU fô T MATSUSHITA 2SC4253 2SC3936 2SC4117 2SD1821 H £ MITSUBISHI 2SC4258 2SC3938 2SC4116 —

C3422

Abstract: AAAM strobo 2SC3420 2SD1508 2SD1509
Contextual Info: Powered T O -1 26 ¡ D O CO N N tn O Application Electronic-Library •c v CEO '-/P&'V. Type No. NPN PNP Ì Audio Drive 2SC3423 ! 2SA1360 T V Chroma Out 2SC3424 ! 2SA1361 . .1 (A VcE*(sat) w VX. ;W frp g,'. •' Tc=2?C V CE >C (V) (W> (V) (A) >c (V> (A)

2SA1317

Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
Contextual Info: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60