2SC512 Search Results

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5129 U nit in mm HORIZO NTAL DEFLECTION O U TPU T FOR HIGH RESOLUTION DISPLAY, COLOR TV. 1 5.5 ± 0.5 a 3.6 ±0.3 • • • • - 3 ^ - - .1- HIGH SPEED SW ITCHING APPLICATIONS. 3 0±0.3 H igh Speed : tf= 0.15/js Typ.

C5122

Abstract: 2SC5122
Contextual Info: 2SC5122 東芝トランジスタ シリコンNPN三重拡散形 2SC5122 ○ 高電圧スイッチング用 単位: mm • 高耐圧です。 • 飽和電圧が低い。 : VCE sat = 0.4 V (標準) (IC = 20 mA, IB = 0.5 mA) : VCEO = 400 V 絶対最大定格 (Ta = 25°C)

Contextual Info: 2SC5120 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 500 MHz typ • High voltage and low output capacitance VCE0 = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Hitachi DSA00164

Contextual Info: 2SC5120 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier

A710

Contextual Info: 2-1 Power Transistors 2-1-3 Transistors for Display Deflection Output Part No. 2SC5002 VCBO VCEO IC Pc V (V) (A) (W) 1500 2SC5124 800 7 80 10 100 Package TO-3PF Fig. No. 1 External Dimensions • No. 1 (TO-3PF) 5.5±0.2 3.45±0.2 ±0.2 5.5 φ 3.3±0.2 3.0

Contextual Info: Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features 4.6±0.2 High-speed switching High collector to base voltage VCBO Wide area of safe operation ASO Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

transistor 12v 1A NPN

Abstract: 2SC5124 transistor TO-3PML Outline Dimensions 200V transistor npn 2a
Contextual Info: Inchange Semiconductor Product Specification 2SC5124 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage switchihg transistor APPLICATIONS ・Display horizontal deflection output ・Switching regulator and general purpose PINNING

CP100

Abstract: 2SC5122
Contextual Info: 2SC5122 TO SH IBA 2 S C 5 1 22 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V^ e o -^OOV • Low Saturation Voltage • V/"cm = 0 A \T C T v n Ì fT/" = 9.0m A Tt> = 0 R m A Ì MAXIMUM RATINGS (Ta = 25°C

C5122 TRANSISTOR

Abstract: C5122 2SC5122
Contextual Info: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • • Unit: mm High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)

2sc5129 toshiba L

Abstract: 2SC5129 tansistor 2-16E3A 2SK528
Contextual Info: 2SC5129 TOSHIBA TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2 S C 5 1 29 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. 15.5 ± 0 .5 . 0 3 .6 ± 0 .3 HIGH SPEED SWITCHING APPLICATIONS. • • • • Wo High Speed : tf=0.15/*s Typ.

C5122 TRANSISTOR

Abstract: 2SC5122
Contextual Info: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)

2SC5127

Abstract: 220E 2SC5127A
Contextual Info: Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SC5127 base voltage 2SC5127A Collector to

2SC5124

Contextual Info: 2SC5124 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 6 V IC 10(Pulse20) A IB 5 A PC 100(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg V V MHz pF 0.8±0.2 1.75 1.05 +0.2 -0.1 1.5 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A)

2SC5121

Contextual Info: Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification Unit: mm ● ● ● • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 400 V Collector to emitter voltage VCEO 400 V Emitter to base voltage

2SC5129

Contextual Info: TO SH IB A 2SC5129 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2 S C 5 1 29 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. in — :— ✓ o I o r ° •too ' in-H CM 'p J f t E►H 2.3 MAX 1 1 Cinvi ' *25 0.9 5 MAX

Contextual Info: 2SC5122 TO SH IB A TENTATIVE TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE H f Mr RM l Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 5.1 MAX. • • High Voltage : V c e O = ^OOV Low Saturation Voltage : VCE sat - °-4V (TyP-) dC - 20mA, Ig = 0.5mA)

2SC5121

Contextual Info: Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 M Di ain sc te on na tin nc ue e/ d 3.8±0.3 • High collector-base voltage Emitter open VCBO • High collector-emitter voltage (Base open) VCEO

2SC5125

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in VHF band. OUTLINE DRAWING Dimension in mm Rl FEATURES • High power output and high gain : Po § BOW, Gpe S 7.2dB,

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2SC5129

Contextual Info: TOSHIBA 2SC5129 2 S C 5 1 29 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm H ORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, CO LO R TV HIGH SPEED SWITCHING APPLICATIONS . .15.5 ± 0.5 3.0 ± 0 .3 0 3 .6 1 0 .3 High Speed tf = 0.15 /us Typ.

2SC5120

Abstract: Hitachi DSA00108
Contextual Info: 2SC5120 Silicon NPN Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier

2SC5125

Abstract: air variable capacitor transistor 5d mica capacitor metal clad mica capacitor T-40E
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial. planar type transistor OUTLINE DRAWING Dimension in mm specifically designed for high power amplifiers in VHF band. R1 FEATURES • High power output and high gain : Po 2 80W, Gpe S 7.2dB,

2SC5121

Contextual Info: Power Transistors 2SC5121 Silicon NPN triple diffusion planar type Unit: mm For general amplification 8.0+0.5 –0.1 3.2±0.2 3.05±0.1 3.8±0.3 1.9±0.1 • High collector to base voltage VCBO • High collector to emitter voltage VCEO • Small collector output capacitance Cob