TANSISTOR Search Results

2sc5129 toshiba L

Abstract: 2SC5129 tansistor 2-16E3A 2SK528
Contextual Info: 2SC5129 TOSHIBA TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2 S C 5 1 29 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. 15.5 ± 0 .5 . 0 3 .6 ± 0 .3 HIGH SPEED SWITCHING APPLICATIONS. • • • • Wo High Speed : tf=0.15/*s Typ.

Contextual Info: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)

Contextual Info: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2

2N3792

Abstract: tansistors TANSISTOR
Contextual Info: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CHE, NP80N055DHE, NP80N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Tansistor designed for high current switching applications.

2SD2499 equivalent

Abstract: tansistor 2SD2499 2-16E3A 2SC2482
Contextual Info: TO SHIBA 2SD2499 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : V C BO - 1500V • High Speed • _ O -* ' O : tf=0.3/*s (Typ. o r\i 4.0 Collector Metal (Fin) is Fully Covered with Mold Resin.

MP-25

Abstract: NP80N055CHE NP80N055DHE NP80N055EHE NP80N055KHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CHE,NP80N055DHE,NP80N055EHE,NP80N055KHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Tansistor designed for high current switching applications.

TANSISTOR

Abstract: MMBTA05LT1 VCBO-60V
Contextual Info: MMBTA05LT1 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TANSISTOR High Collector-Emitter Voltage:Vcbo=60V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Symbol Rating 2.4

2SC5129

Contextual Info: TO SH IB A 2SC5129 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2 S C 5 1 29 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. in — :— ✓ o I o r ° •too ' in-H CM 'p J f t E►H 2.3 MAX 1 1 Cinvi ' *25 0.9 5 MAX

transistor bc 577

Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
Contextual Info: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2

pnp array

Abstract: Q62702-C2411 marking code w1s transistor Common collector configuration
Contextual Info: BCR 10PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=10kΩ, R2=10kΩ) Tape loading orientation

Contextual Info: TOSHIBA 2SC5142 TO SHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE ? < ; r M T s i V • ù. i Unit in mm H O R IZO N TA L DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV 20.5MAX. HIGH SPEED SW ITCHING APPLICATIONS • • i- High Voltage : VcBO = 1500V

Contextual Info: TO SH IB A 2SD2498 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV • • High Voltage : V c b o = 1500V Low Saturation Voltage : v C E s a t = 5V (Max-)(Ic = 4A, IB = 0.8A) High Speed : tf=0.4//s(Typ.)

Q62702-C2486

Abstract: transistor digital 47k 22k PNP NPN Marking wfs sot
Contextual Info: BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Tape loading orientation

G8050S

Abstract: G8550S TANSISTOR
Contextual Info: CORPORATION G8550S ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B PNP EPITAXIAL PLANAR TANSISTOR Description The G8550S is designed for general purpose amplifier applications. Features * High DC Current gain: 100-500 at IC= 150mA *Complementary to G8050S

Contextual Info: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)

NP80N055MHE

Abstract: 80N055 NP80N055MHE-S18-AY NP80N055NHE NP80N055NHE-S18-AY
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N055MHE,NP80N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Tansistors designed for high current switching applications. ORDERING INFORMATION

transistor marking code wts

Abstract: pnp array Q62702-C2496 tansistor npn transistor bc icbo nA npn Tansistor BC
Contextual Info: BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ PNP: R1 = 2.2kΩ, R2 = 47kΩ

Contextual Info: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)

564 sot363

Contextual Info: SIEMENS BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=22k£2, R2=22k£i) Tape loading orientation

Contextual Info: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CHE, NP80N055DHE, NP80N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Tansistor designed for high current switching applications.

tansistor

Abstract: 2SD2498 2-16E3A 2SC2482
Contextual Info: TOSHIBA 2SD2498 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : V C BO - 1500V • High Speed • _ ^ Low Saturation Voltage : VC E sat = 5V(Max.)(IC = 4A, IB = 0.8A) 3.0 ±0.3 p-(

tansistor

Abstract: 2SC5048 2-16E3A 2SK528
Contextual Info: TOSHIBA 2SC5048 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5048 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV 15.5 ± 0.5 HIGH SPEED SWITCHING APPLICATIONS • • 3.0 ±0.3 wí¡ High Voltage : VCBO- 1500V