mp25 TRANSISTOR
Abstract: MP-25 NP80N055CHE NP80N055DHE NP80N055EHE TO-220AB transistor package 8211M
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CHE, NP80N055DHE, NP80N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications.
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np80n055chenp80n055dhenp80n055eheo-220ab+5mp-25o-262mp25 transistorto-220ab transistor package8211m
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Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CHE, NP80N055DHE, NP80N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Tansistor designed for high current switching applications.
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np80n055chenp80n055dhenp80n055eheo-220ab+2o-262o-263
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MP-25
Abstract: NP80N055CHE NP80N055DHE NP80N055EHE NP80N055KHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CHE,NP80N055DHE,NP80N055EHE,NP80N055KHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Tansistor designed for high current switching applications.
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np80n055chenp80n055dhenp80n055ehenp80n055khe+4o-262o-220abo-263mp-25
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Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CHE, NP80N055DHE, NP80N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Tansistor designed for high current switching applications.
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np80n055chenp80n055dhenp80n055eheo-220ab+2o-262o-263
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MP-25
Abstract: NP80N055CHE NP80N055DHE NP80N055EHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CHE, NP80N055DHE, NP80N055EHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Tansistor designed for high current switching applications. FEATURES
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np80n055chenp80n055dhenp80n055eheo-220ab+3o-262o-263mp-25
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80N055
Abstract: NP80N055MHE NP80N055NHE D1409 80n05 NP80N055CHE NP80N055DHE NP80N055EHE NP80N055EHE-E1-AY NP80N055EHE-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055EHE, NP80N055KHE NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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np80n055ehenp80n055khenp80n055chenp80n055dhe+9np80n055mhenp80n055nhenp80n055ehe-e1-aynp80n055ehe-e2-aynp80n055khe-e2-aynp80n055khe-e1-ay80n055d140980n05
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PA1900TE
Abstract: 2sk3326 PA1770 d1340 2SK3298 UMOS-2
Contextual Info: PowerMOSFET by NEC: Well-built . Even the most brillant It’s the same in real life. intelligence needs a little muscle to put the ideas into practice. Conversely, sheer brute force won’t get you anywhere without some Let’s face it, brain or brainpower behind it.
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e-28007i-20124i-00139gb-mk14+7d13405ee3v0pf00pa1900te2sk3326pa1770d13402sk3298umos-2
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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2sk25002sk1543upd16861gsnec 2sk2500+6upa1559htransistor nec 2sk25002sc4496amc10087f12sa733aupd16861
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02cz1002cz1102cz1202cz13+1502cz1502cz1602cz1802cz202cz20stf12a80bstc1026bstd1046btb04-600sapstf6a80bstd1040to510dhbstc1040to812njbtb15-700b
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NP80N055MHE
Abstract: NP80N055CHE NP80N055DHE NP80N055EHE NP80N055EHE-E1-AY NP80N055EHE-E2-AY NP80N055KHE NP80N055KHE-E1-AY NP80N055KHE-E2-AY NP80N055NHE
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TO-252 MOSFET p channel
Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
Contextual Info: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering
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nl-5612s-18322f-78142e-28007+11np-s-news109v30to-252 mosfet p channelnp80n03clenp80n03dlenp80n03elenp80n04chenp80n04dhenp80n04ehenp84n04chenp84n04dhenp84n04ehe
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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mc10087f1
Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Contextual Info: 1/89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.
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ir260/ws260/hs350ir260/hs350mc10087f1mc-10041+8mc-10043mc-10087f1-xxxmc-10044mc-10051bf12sc56642sc5292upc1701cmc-10059
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2SC5664
Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Contextual Info: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation
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d18597ej1v0sg2sc56642sc5292npn transistor sst 117+7d18592sk4075 transistor2sc9452sk4075pc78l05j2sk39182sk3326
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