2SK68 Search Results

2SK680A

Abstract: 5A 53
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK680A SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Not necessary to consider driving current because of its high input impeance. 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1

transistor jsx

Abstract: 2SK681 ipw fet s0822 t460 transistor
Contextual Info: ^ £ — 5 7 . 5 / — h M O S W * im . R $ b $ k '< t7 - Y :7 > ï ï * 9 M O S Field Effect Power Transistor 2SK681 MOS F E T 2SK 681Ü , N f - - v ^ . ; H i^ > 'f I7 - M 0 S t i i z «t i m ^c7 K 7 # x a 7 f > / FETT, f v q x ¥ i i : mm) 5 V'ffiiH*IC<7)

Contextual Info: 6427525 N E C N E C ELECTRONICS INC 98 D E LE CTRONICS INC 18865 D T -Z S -ir g IbME7SES DDlflflbS S i^Ï-V B B fW B a s rg a a B g » ? -* MOS FIELD EFFECT POWER TRANSISTOR 2SK680 FAST SWITCHING N-CHANNEL SILICON POWER MOS FET F E A TU R ES PACKAG E D IM E N S IO N S

C947

Abstract: NF 022 NEC IEI-620 2SK680A T460 TC-7831A transistor NEC K 946
Contextual Info: Mos M O S Field E ffe c t T ran sis to r 2SK680A MOS F E T 2SK680A i, N ^ ^ / H IO ^ M O S iz x £ F E T T ', -y f> fs < , ^ < n K y # m m o j i à t i r ^ ò X ^ i ò , * (W 5 V ?1 3 U C Ì • mm Tto - ? , 7 ? 1.5 ±0.1 A tr o f à j - y f à t r Ì ' C t o

2SK680

Abstract: a006 transistor transistor A006 tc6106
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK680 FAST SW ITCHING N-CHANNEL SILICON POWER MOS FET FEATURES PACKAGE DIM ENSIONS • Suitable fo r switching power supplies, actuater controls, and in m illim e te rs pulse circuits 4.5 ± 0 .1

s0246

Abstract: transistor et 454 TRANSISTOR BJ 131 transistor BJ 932 2SK681A T108 T210 T460 945-X bj 945
Contextual Info: MOS M O S Field E ffe c t T ran sis to r 2SK681A MOS F E T 2SK681A i , F E T T", 5 V m ^ I C c O ^ ^ j x 4 >y j - > w X X 't o b e mm i 1.2 7 .0 M A X p T r t c ^ ü if# T - t o 0 . 8 ± 0.1 i t o iS ^ - v iÊ iÆ 0 4 T - t 'o 0 . 6 + 0 .1 R DS(on)=0.7 Q (M A X .)

2SK68A

Abstract: Transistor 2SK-68A
Contextual Info: SEC N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR ELECTRON DEVICE 2SK68A D E S C R IP T IO N T h e 2 S K 6 8 A is designed fo r use in d riv e r stage o f A F lo w noise P A C K A G E D IM E N S IO N S a m p lifie r. in m illim e te rs inches FEATURES • L o w IMoise F ig ure

Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRAN SISTO R 2SK680A N-CHANNEL MOS FET FOR HIGH SPEED SW ITCHING The 2SK68QA, N-channel vertical ty p e MOS FET, is a sw itching PACK AG E D IM E N S IO N S U nit : mm device w h ich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V

2SK686

Abstract: ODDS445 t37h
Contextual Info: SANYO SEMICONDUCTOR 15E D I CORP T-3^-|/ 2SK686 N-Channel M O S Silicon Field-Effect Transistor 2052A <£&m 7 cH7G7ti~ DODS441 High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters Absolute H a x l M Ratings at Ta=25°C

2SK681

Abstract: 2SK681A TC-2336
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SK681A N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING T he 2S K 6 8 1 A , N-channel vertical type M O S F E T , is a switching

JG Diode

Contextual Info: 2SK684-SILICON N -C H A N N E L MOS F E T Ü S Ü S Ä f t X ' f -y - f > 7 • tt • t • M > X 4 -V f - y / X t ° — • K '''o 1. Gate 2. Drain D C -D C a > ^ * Flange 3. Source (D im ensions in mm) i f ¿ ' tC ft& o (T0-3P) POW ER VS. TEM P ER ATUR E DERATING

2SK68

Abstract: 2SK681A ScansUX882
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SK681A N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm The 2SK681A, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The MOS FET has excellent switching characteristics and is suitable

2SK68

Abstract: transistor 2sk68 2SK65 2sk68 a 2sk68 nec
Contextual Info: NEC N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR ELECTRON DEVICE D ESC R IPTIO N 2SK68 The 2SK68 is designed fo r use in driver stage o f A F am plifier. PACKAGE D IM EN SIO N S in m illim e te rs inches FEA TU R ES • High voltage, high |Yfs| and wide dynam ic range

Contextual Info: 2SK685 ^ SILICON N-CHANNEL MOS FET i S S Ü / - y f > M • 4$ • J * • x-f y f y / x f v>0 • 0.9 ■ 1.0 ■UM u- DC—DCs y ^ — 9 K 7 5.46 ± 0 .5 4 5 .4 6 i 0 .5 t* 1. Gate 2. Drain Flange 3. Source (Dimensions in mm) (TO-3P) ABSOLUTE MAXIMUM RATINGS ( r a= 25“C)

2SK687

Abstract: DDD3710
Contextual Info: SANYO SEMICONDUCTOR CORP ÍEE DI 7cH707ki □□□S44b S T - V M l 2SK687 N -Channel M O S Silicon Field-Effect Transistor 2052A 2464A High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters Absolute Maxim» Ratings at Ta=25°C

2SK683

Abstract: 2SK682 c100m
Contextual Info: 2SK682,2SK683 SILICON N -CHAN NEL MOS F E T ¡ü iíS m ftX 'í •? + > r • * v 'o • X -f • y f / ' / X t - K ¿'ilt'o 3.6 • x -f . y f v / i - i f a i / - ; , DC— DC^ >'* i — 9 K 7 4 ''* & £" Infilo Sym bol D r a in -S o u r e e V o ltag e V^DSS

2SK681A

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98 .2 MOS FIELD EFFECT TRANSISTOR 2SK681A N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm

2SK680

Contextual Info: MOS FIELD EFFECT POWER TRANSISTOR 2SK680 FAST SW ITCHING N-CHANNEL SILICON POWER MOS FET FEATURES PACKAGE DIMENSIONS • Suitable fo r sw itching pow er supplies, actuater controls, and in m illim e te rs pulse circuits • L o w RoS onl • No second breakdown

2SK684

Abstract: dc-dc converter hitachi LT 220 diode
Contextual Info: MM'ìbEDS GG131E5 2fl7 • H I T M 2SK684 “ HITACHI/ OPTOELECTRONICS blE D * 3 .2 ± 0 2 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • Low On-Resistance • • High Speed Switching Low Drive Current • No Secondary Breakdown •

2SK68

Abstract: 2SK688 transistor 2SK688 DDD3710 A1788 TD-220AB transistor BUV 92
Contextual Info: SANYO SEMICONDUCTOR CORP IS E 2052A . It . : ?ìT?G 7t, T - 3 7 - 2SK688 2465A D I il N -C h a n rie l M O S S ilic o n F ie ld -E ffe c t T ra n sisto r High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters

2SK683

Abstract: 2SK682 2SK68 DIODE 720
Contextual Info: blE D 44^b20S 00131E1 L3L IHITM 2SK682,2SK683 SILICO N N -C H A N N E L MOS FET HIGH SPEED POWER SWITCHING • FEATURES • • • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown Suitable for Switching Regulator, DC-DC Converter

Contextual Info: Transistors IC SMD SMDType Type Product specification 2SK680A SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Not necessary to consider driving current because of its high input impeance. 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1

TC-7831B

Abstract: 2335A 2SK680A
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 S K 6 8 0 A N-CHANIMEL MOS FET FOR HIGH SPÈED SWITCHING The 2SK680A, N-channel vertical type MOS FET , is a switching PACKAGE DIMENSIONS Unit : mm device which can be driven directly by the output of ICs having a 5 V

2SK680

Abstract: 2sk68 TRANSISTOR DG S-10 tc6106
Contextual Info: M O S Field Effect Power Transistor 2SK680Ü, N - f ?Wb|ÊÉ ^“'7 - M 0 S F E T T ', J : £ i f i f ê l i I ! j * r 5 T t b £ : x -i v - f > i , ^ 7 i t i t i 5 V t l# JC « ( ¥ f i 4 .5 ± 0 .1 X T 't„ f f if t - C V 'S f c t f ) , T : m m ) ?