2SK129 Search Results

2SK1293

Abstract: MEI-1202 TEA-1035 AK 1034 TEA1035
Contextual Info: DATA SHEET NEC i MOS FIELD EFFECT POWER TRANSISTOR 2SK1293 À SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1293 is N-channel MOS Field Effect Transistor de­ PACKAGE DIMENSIONS in millimeters signed for solenoid, motor and lamp driver.

Contextual Info: 2SK1299 L , 2SK1299(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK1778

Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
Contextual Info: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247

DIODE ku 1490

Abstract: ku 1490 2SK129 2SK1292
Contextual Info: M O S Field E ffe c t P o w e r T ra n s is to r 2SK1292 /< 7 -M O S FET I Ü 2SK1292 i, F E T T", X > h M ' <r7 — MOS • mm 5 ^ X 1&* > J i £ K t \ T - t , X ' f v f v y"#1î ^ firtT i - y, vu-y^K, 7 >7°i0ÆijfiHi-SjüT-fo m # o i& t y M f h r - t o

Hitachi DSA002713

Contextual Info: 2SK1298 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features x x x x x Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2SK1293 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

TC-2394

Abstract: transistor D 2394 nec 2501 PT-235 2SK1295 MEI-1202 TEA-1035 nec 2702
Contextual Info: DATA SHEET NEC J HMOS FIELD EFFECT POWER TRANSISTOR 2SK1295 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1295 is N-channel MOS Field Effect Transistor de­ PACKAGE DIMENSIONS in millimeters signed for solenoid, motor and lamp driver.

2SK129

Abstract: EM-521 DF RV transistor 2SK1290 S-60 TEA-509 Transistor DF- RO
Contextual Info: r r — S 7 5 • / — h MOS M O S Field E ffe c t P o w e r T ra n s is to r 2SK1290 /< H — M O S 2S K 1290 ü , h^ ''* 7- F ü 'T T . 5 V ,u ifcü& I C s o J W j i c J ; h u'i-R' W i /J‘ "r FET W. : mm MOS ^ ^ ÎQ 0 + 0.3 4.5 + 0.2 2 7+ 0 2 ^ » 3 .2 ± 0 .2

2SK1293

Abstract: MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC i MOS FIELD EFFECT POWER TRANSISTOR 2SK1293 À SWITCHING N-CHANNEL POWER MOS FET

2SK1294

Abstract: NEC 41-A 002 TD-7594 2SK1294 NEC MEI-1202 TEA-1035
Contextual Info: NEC ^•SESSE DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1294 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1294 is N-channel M O S Field Effect Transistor de­ PACKAGE DIMENSIONS in millimeters signed fo r solenoid, m otor and lam p driver.

2SK1293

Abstract: AS1210 MEI-1202 TEA-1035 ss123
Contextual Info: DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2SK1293 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1293 is N-channel M O S Field Effect Transistor de­ in millimeters signed fo r solenoid, m otor and lam p driver.

Contextual Info: 2SK1299S Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)3 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)

LD 25 V

Abstract: 2SK1297 FW-1000
Contextual Info: 2SK1297 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK1299S

Abstract: Hitachi DSA00279
Contextual Info: 2SK1299 L , 2SK1299(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

1A06

Contextual Info: 2SK1299 L , 2SK1299 S Silicon N-Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,

ON4560

Abstract: 2SK1290 2SK129 MEI-1202 TEA-1035 transistor d 2389
Contextual Info: N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1290 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T he2S K 1290 isN -channel M O S Field Effect Transistor designed fo r solenoid, m o to r and lam p driver. FEATURES • Low On-state Resistance

2SK1299

Abstract: Hitachi DSA00347
Contextual Info: 2SK1299 L , 2SK1299(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SK1296 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SK1299 L , 2SK1299(S) Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

NEC 41-A 002

Abstract: 2SK1294 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC ^•SESSE DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1294 SWITCHING N-CHANNEL POWER MOS FET

2SK1296

Abstract: Hitachi DSA0015
Contextual Info: 2SK1296 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

TEA-1035

Abstract: 2SK1292 Low Forward Voltage Diode MEI-1202
Contextual Info: DATA SHEET NEC À MOS FIELD EFFECT POWER TRANSISTOR 2SK1292 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1292 is N-channel MOS Field Effect Transistor designed for PACKAGE DIMENSIONS in millimeters solenoid, motor and lamp driver.

Contextual Info: 2SK1298 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK1297

Abstract: 2SK1298 m1501
Contextual Info: 2SK1298 Silicon N-Channel MOS FET Application TO–3PFM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,