2SC5866 Search Results

Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)

2SC5866

Contextual Info: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 !External dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)

Contextual Info: 2SC5866 Datasheet NPN 2A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 2A TSMT3 Collector Base Emitter 2SC5866 SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2094 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

2SC5866

Abstract: 2SA20 2SA2094
Contextual Info: Medium power transistor 60V, 2A 2SC5866 Dimensions (Unit : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector Applications Low frequency amplifier High speed switching 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95

2SC5866

Abstract: 6008E-12
Contextual Info: SPICE PARAMETER 2SC5866 by ROHM TR Div. * 2SC5866 NPN BJT model * Date: 2006/11/13 .MODEL 2SC5866 NPN + IS=270.00E-15 + BF=230.08 + VAF=100 + IKF=3.6536 + ISE=270.00E-15 + NE=1.4864 + BR=7.8806 + VAR=100 + IKR=.34994 + ISC=7.6008E-12 + NC=1.4061 + NK=.76747

Contextual Info: Medium power transistor 60V, 2A 2SC5866 Dimensions (Unit : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector Applications Low frequency amplifier High speed switching 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95

Contextual Info: Medium power transistor 60V, 2A 2SC5866 Dimensions (Unit : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector Applications Low frequency amplifier High speed switching 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95

2SC5866

Abstract: 2SA2094
Contextual Info: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 !External dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)

2SC5866

Abstract: 2SA20 2SA2094
Contextual Info: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 zExternal dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)

2SC5734K

Abstract: 2sc5917 2SC5734 2SA2054
Contextual Info: Excellence in Electronics 2005 Ver.1 T ransistor New Products Pari No. B V ceo lc Ip N PN M [A] [A] 2SA2048K 2SC5730K 30 1 2 2SA2054K 2SC5734K 90 0.5 1 Package SMT3 ^ Pc=0.2W " PNP Pari No. Package TSMT3 Pc=0.5W * W Package ATV P c=1W J L 'V BV ceo [V] hF:

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

Contextual Info: Medium power transistor 60V, 2A 2SA2094 Dimensions (Unit : mm) TSMT3 0.4 (1) (3) 1.9 Applications Low frequency amplifier High speed switching 0.6 1.0MAX 0.85 0.7 0.1 0.3 (1) Base (2) Emitter (3) Collector 0.16 (2) 0.95 0.95 2.8 1.6 2.9 Features

2SA2094

Abstract: 2SC5866
Contextual Info: 2SA2094 Transistors Medium power transistor −60V, −2A 2SA2094 !External dimensions (Unit : mm) TSMT3 2.9 0.4 (1) (3) 1.9 0.3 1.0MAX 0.7 0.6 0.1 (1) Base (2) Emitter (3) Collector 0.85 (2) 0.95 0.95 2.8 1.6 0.16 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A)

2SA2160

Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Contextual Info: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series

2SC6144

Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.

2SC5866

Abstract: 2SA2094
Contextual Info: 2SA2094 Transistors Medium power transistor −60V, −2A 2SA2094 !External dimensions (Unit : mm) TSMT3 2.9 0.4 (1) (3) 1.9 0.3 1.0MAX 0.7 0.6 0.1 (1) Base (2) Emitter (3) Collector 0.85 (2) 0.95 0.95 2.8 1.6 0.16 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A)

2sc5922

Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
Contextual Info: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability

Contextual Info: Medium power transistor 60V, 2A 2SA2094 Dimensions (Unit : mm) TSMT3 0.4 (1) (3) 1.9 Applications Low frequency amplifier High speed switching 0.6 1.0MAX 0.85 0.7 0.1 0.3 (1) Base (2) Emitter (3) Collector 0.16 (2) 0.95 0.95 2.8 1.6 2.9 Features

2SA1576UB

Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
Contextual Info: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.