2SD198 Search Results

2SB1393

Abstract: 2SD1985
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1393 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -1.2V(Max,)@ IC= -3A ·Complement to Type 2SD1985

darlington Ib 0.1A

Abstract: darlington transistor for audio power application 2SD1980 100V 2A MPT3 2SB1316 2SB1580 2SD1867 2SD2195 T100 DPT-100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V, 2A 2SD2195 / 2SD1980 / 2SD1867 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316.

D1980

Abstract: 2sd darlington MARKING CODE f5 diode marking code 15h marking 7T transistor TRANSISTOR CD 263 2SD1980 2SD1980F5 damper diode darlington npn transistor t f5 j
Contextual Info: 2SD1980F5 Transistor, NPN, Darlington pair Features • available in CPT F5 SC-63 package • package marking: D1980-AQ, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) • damper diode is incorporated

2SD1959

Abstract: 2SB1301 2SD1951 2SD1941 2sd1944 2SD1948 2SD1940 2SD1943 2SD1946 2SD1947
Contextual Info: - 274 - m. 2SD1940 2SD1941 2SD1943 2SD1944 2SD1946 2SD1947 2SD1948 2SD1949 2SD1950 2SD1951 2SD1952 2SD1953 2SD1955 2SD1956 z&umï 2SD1958 2SD1959 2SD1961 2SD1962M 2SD1964 2SD197Q 2SD1971 2SD1972 2SD1974 2SD1975 2SD1976 2SD1977 2SD1978 2SD1979 2SD1981 2SD1983

Contextual Info: Power Transistor 100V, 2A 2SD1980 / 2SD1867 zDimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. 2SD1980 6.5 5.1 2.3 2.5

2SD1986

Contextual Info: h 7 > v X $ /Transistors x t'$ * y 7 J l'7 U -j-B N P N 2SD1986 • 2SD1986 # - v > b>mm Epitaxial Planar NPN Silicon Transistor (Darlington) Freq. Power Amp. • it-ffi^ j'iiE I/D im e n s io n s (U n it: mm) f t f t 1) j f - i j > hFE 2 ) a . - x • x 5 -y

Contextual Info: 2SD1985 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)3

2SD1985A

Abstract: 2SB1393 2SB1393A 2SD1985
Contextual Info: 2SD1985, 2SD1985A Power Transistors 2S D 1985, 2S D 1985A Silicon NPN Triple-Diffused Planar Type Package D im ensions Power A m plifier C om plem entary Pair w ith 2SB1393, 2S B1393A Unit I mm 4.4max. 10.2max. 5.7 max. • Features 2.9max • H igh DC c u r re n t gain h ^ and good lin earity

2SD198

Contextual Info: Inchange Semiconductor Product Specification 2SD198 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·voltage regulator ·Inverters ·Switching mode power supply PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SD2398

Abstract: 2SB1316 2SB1567 2SB1580 2SD1867 2SD1980 2SD2195 T100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor 100V , 2A 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 !External dimensions (Units : mm) 2SD2195 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) Darlington connection for high DC current gain.

2SD1984

Contextual Info: H ITA CH I 2SD1984 BILÜ TiV HPh rC’rTA.Kl.il .O 'M F P .E ^ U L :<Cy Ü M P L IF IE B ¡íü L • ■ Hi / ■ - C*«Hr M n J. J x u c . llX -I ¿I'L TEL _VE.'iliJ { J G y E t t l > î ï JJI<K>) I A Ü S O L U Ï L I.V .X ' u u U f i r t l IMG S .T j- ï ï ' L )

Contextual Info: Power Transistors 2SB1393, 2SB1393A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1985 and 2SD1985A Unit: mm • Features 10.0±0.2 4.2±0.2 5.5±0.2 2.7±0.2 Symbol 2SB1393 base voltage 2SB1393A Collector to 2SB1393 –60 VCBO

2SD1981

Abstract: EN2534 sg 2534
Contextual Info: Ordering number:EN2534 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1981 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2006B [2SD1981] Features 6.0 5.0

2SM98

Abstract: 2SD1984
Contextual Info: H ITACH I 2SD1984 SH. < C O V î*N [ i' T A X I U „QW F ñ L u . V , V A M P U F C íi Î ! í\ i • fí, »*> J í" 1 li I 1 : <\3W '; â* a,. i S*‘A M UÉOfcC TO-92 ; Î *» C j !> r M A X IM U M C O t t t .C . O H a i S S W A T i O « LR' i tV r-^ W v u

2SB1393

Abstract: 2SB1393A 2SD1985 2SD1985A
Contextual Info: Power Transistors 2SB1393, 2SB1393A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1985 and 2SD1985A Unit: mm M Di ain sc te on na tin nc ue e/ d • Features Parameter 2SB1393 base voltage 2SB1393A Collector to 2SB1393 VCBO

2SD2195

Abstract: 100V 2A MPT3 2SB1316 2SB1580 2SD1867 2SD1980 T100 DPT-100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V, 2A 2SD2195 / 2SD1980 / 2SD1867 zExternal dimensions (Unit : mm) 2SD2195 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.

2SD2398

Abstract: 2SB1287 2SB1316 2SB1567 2SB1580 2SD1765 2SD1867 2SD1980 2SD2195 96-227-D85
Contextual Info: Transistors 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 96-139-B85 (96-227-D85) 287

Contextual Info: Power Transistor 100V, 2A 2SD1980 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. Dimensions (Unit : mm) 2SD1980 6.5 5.1 2.3 0.75 0.65

2SD1985

Abstract: 2SB1393 2SD1985A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1985 2SD1985A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB1393 /1393A

2SD198

Contextual Info: SavantIC Semiconductor Product Specification 2SD198 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·voltage regulator ·Inverters ·Switching mode power supply PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SB1393

Abstract: 2SB1393A
Contextual Info: Inchange Semiconductor Product Specification 2SB1393 2SB1393A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Satisfactory linearity of hFE ・Low collector to emitter saturation voltage ・Complement to type 2SD1985/1985A APPLICATIONS

2SB1393

Abstract: 2SB1393A
Contextual Info: JMnic Product Specification 2SB1393 2SB1393A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Satisfactory linearity of hFE ・Low collector to emitter saturation voltage ・Complement to type 2SD1985/1985A APPLICATIONS ・For power amplification

2SD1981

Abstract: Sicc 4227ta
Contextual Info: Ordering number : EN 2 5 3 4 No.2534 SANYO _ 2SD1981 NPN Epitaxial Planar Silicon Darlington Transistor Driver Applications Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection on-chip bias resistance, damper diode

Contextual Info: Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A Unit: mm • Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE sat