FREQ30M Search Results
FREQ30M Datasheets Context Search
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Contextual Info: A1B630A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.3m Peak Curr. Tol. Total Cap. (F)450f Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30M Series Induct. (H)300p R(series) (Ohms)9.0 Neg Resist.38 Semiconductor MaterialGaSb |
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a1b630afreq30m | |
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Contextual Info: 2N930/TNT Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2n930/tntfreq30m | |
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Contextual Info: FZT657 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)500m Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)100m |
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fzt657freq30m | |
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Contextual Info: 2SD1667 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2sd1667freq30m | |
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Contextual Info: 2SB1299 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)2 |
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2sb1299freq30m | |
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Contextual Info: 1723-0410 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40ö V(BR)CBO (V)50 I(C) Max. (A)20 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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freq30m | |
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Contextual Info: MJE15031 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150ö V(BR)CBO (V)150 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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mje15031freq30m | |
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Contextual Info: PT9796 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)50 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)140þ I(CBO) Max. (A)10mx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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pt9796freq30m | |
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Contextual Info: 2852-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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freq30mtime100n | |
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Contextual Info: SCA14031 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)350 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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sca14031freq30mtime500n | |
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Contextual Info: B3560 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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b3560freq30m | |
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Contextual Info: 2856-3 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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freq30mtime100n | |
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Contextual Info: THMJE15028 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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thmje15028freq30m | |
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Contextual Info: 2SD1667R Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2sd1667rfreq30m | |
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Contextual Info: THMJE15029 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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thmje15029freq30m | |
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Contextual Info: SCA14060 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)400 I(C) Max. (A)15 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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sca14060freq30mtime500nreq30m | |
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Contextual Info: 1814-2701 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)275ö V(BR)CBO (V)300 I(C) Max. (A)10 Absolute Max. Power Diss. (W)44 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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freq30mtime300n | |
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Contextual Info: B3579 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)175# I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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b3579freq30m | |
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Contextual Info: P1743-1430 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)150 I(C) Max. (A)30 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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p1743-1430freq30m | |
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Contextual Info: 1763-1010 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)100 I(C) Max. (A)40 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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freq30m | |
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Contextual Info: PU4510 Transistors Common Emitter Transistor Array Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3 P(D) Max. (W)15# Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) |
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pu4510freq30meq30m | |
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Contextual Info: 2SB1449 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2sb1449freq30mtime100n | |
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Contextual Info: 1748-1610 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160ö V(BR)CBO (V)160 I(C) Max. (A)40 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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freq30mreq30m | |
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Contextual Info: RCP131B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250ö V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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rcp131bfreq30m | |