darlington Ib 0.1A
Abstract: darlington transistor for audio power application 2SD1980 100V 2A MPT3 2SB1316 2SB1580 2SD1867 2SD2195 T100 DPT-100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V, 2A 2SD2195 / 2SD1980 / 2SD1867 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316.
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2sd21952sd19802sd18672sb1580+72sb1316sc-62darlington ib 0.1adarlington transistor for audio power application100v 2a mpt3t100dpt-100
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2SD2195
Contextual Info: h "7 > y / I ransistors 2SD2195 2SD 2195 X M$ * y 7 J\>-f Is - +MNPN V lJ □ > h 7 > V * 2 Epitaxial Planar NPN Silicon Transistor Darlington /M e d iu m Power Amp. • il-ffi rfi&H/Dimensions (U nit: mm) 1) IJ > h hFE 2) K fcrtK 3) A . - X • x = 4) Pc = 2 W T 'a fe 5
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2SD2195
Abstract: is2764 BF 246 Darlington npn BF800
Contextual Info: SPICE PARAMETER 2SD2195 * 2SD2195 DARLINGTON NPN BJT model * Date: 2006/12/11 * BJTs with a diode and resistors *C B E .SUBCKT 2SD2195 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .8071 D1 3 1 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9
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2sd2195500e3764e-900e-21+80e-1500e-3076e-12835e-12is2764bf 246darlington npnbf800
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2SD2398
Abstract: 2SB1316 2SB1567 2SB1580 2SD1867 2SD1980 2SD2195 T100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor 100V , 2A 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 !External dimensions (Units : mm) 2SD2195 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) Darlington connection for high DC current gain.
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2SD2195
Abstract: 100V 2A MPT3 2SB1316 2SB1580 2SD1867 2SD1980 T100 DPT-100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V, 2A 2SD2195 / 2SD1980 / 2SD1867 zExternal dimensions (Unit : mm) 2SD2195 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.
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2sd21952sd19802sd18672sb1580+42sb1316100v 2a mpt3t100dpt-100
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2SD2398
Abstract: 2SB1287 2SB1316 2SB1567 2SB1580 2SD1765 2SD1867 2SD1980 2SD2195 96-227-D85
Contextual Info: Transistors 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 96-139-B85 (96-227-D85) 287
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2sb15802sb13162sb15672sb1287+72sd21952sd19802sd18672sd23982sd176596-139-b8596-227-d85
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Marking DP
Abstract: 2SD2398 ROHM MARKING CODE 3J 100V 2A MPT3 2SD1867 2SB1316 2SB1567 2SB1580 2SD1980 2SD2195
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor 100V , 2A 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 •Features •E xternal dimensions (Units: mm) 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.
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2sd21952sd19802sd18672sd2398+72sd219512sd198012sd18672sb15802sb13162sb1567marking dprohm marking code 3j100v 2a mpt3
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TRANSISTOR D 1765
Abstract: TRANSISTOR D 2398 MARKING BB5 ic b1316 ic bb5 B1580 12SB1316 DIODE B1316 transistor 1765
Contextual Info: 2SB1580 12SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s 1 2 3 4 ) ) ) ) •A b s o lu te maximum ratings (Ta~25"C } D arlington connection fo r high D C current gain.
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2sb158012sb13162sb15672sb1287+142sd21952sd19802sd18672sd23982sd17651380/2sdtransistor d 1765transistor d 2398marking bb5 icb1316ic bb5b1580diode b1316transistor 1765
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DIODE C05-10
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V , 2A 2SD2195 / 2SD1980 / 2SD1867 zExternal dimensions (Units : mm) 2SD2195 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.
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2sd21952sd19802sd18672sb1580+22sb1316diode c05-10
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2SD2398
Abstract: 2SD2195 2SD1980 100V 2A MPT3 2SB1316 2SB1567 2SB1580 2SD1867 T100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor 100V , 2A 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 !External dimensions (Units : mm) 2SD2195 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) Darlington connection for high DC current gain.
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2sd21952sd19802sd18672sd2398+52sb1580100v 2a mpt32sb13162sb1567t100
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2SD1960
Abstract: 2sd1960 transistor 2SD1765 2SD2398 100V 2A MPT3 2SB1287 2SB1316 2SB1567 2SB1580 2SD1867
Contextual Info: 2SB1580 / 2SB1316 / 2SB1567 / 2SB12B7 2SD2195 / 2SD1960 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Darlington connection for high DC current gain.
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2sb15802sb13162sb15672sb12b7+82sd21952sd19602sd18672sd23982sd17652sd1960 transistor100v 2a mpt32sb1287
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2SD1980
Abstract: 2SD2195 2SD1867 100V 2A MPT3 2SB1316 2SB1580 T100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V , 2A 2SD2195 / 2SD1980 / 2SD1867 zExternal dimensions (Units : mm) 2SD2195 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.
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2sd21952sd19802sd18672sb1580+32sb1316100v 2a mpt3t100
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Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390
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ta-252sb11322sa19002sb1184+32sb11822sb1181ot-89
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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bap1321-02bap65-05bap65-03bap65-05w+16bap65-02bap63-03bap63-02bap64-03bap64-02bb143bc548 transistor replacementtyn612 pin diagram1n4007 smd, toshibas0817mhtyn604 scr pin diagramkmz51 compasstransistor s1a 64 smdtoshiba l 300 laptop motherboard circuit diagramjfet transistor replacement guide j201replacements for transistor nec d 587
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100V 2A MPT3
Abstract: 2SB1316 2SB1580 2SD1980 2SD2195 T100
Contextual Info: 2SB1580 / 2SB1316 Transistors Power Transistor −100V , −2A 2SB1580 / 2SB1316 zExternal dimensions (Units : mm) 2SB1580 4.0 1.5 0.4 1.0 2.5 (1) 0.5 1.6 (2) 3.0 0.5 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.
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2sb15802sb1316-100v2sd2195+32sd1980100v 2a mpt3t100
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113 marking code transistor ROHM
Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.
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113 marking code transistor rohmdtds14gpdtb133hkarkm transistor+62sc5274datasheet fmc1arkm 33 transistorfmc1arkm 24dtd133hka
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B1182
Abstract: B 1182 b1184 D1664
Contextual Info: T r T r a n s sto rs ★ Package m ounted on ceram ic 14 x 18 x 0.7m m • MPT SOT-89 , CPT (DPAK) Types Ty pe . (A) 32 -1 2* MPT (A) CPT 2 S B 1132 — — 2 S B 1184 -5 0 3 — 15 2 S B 1188 2 S B 1182 -32 2 2* 10 2 S B 1189 — 80 2 S B 1260 2SB1181
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ot-892sb1181rxt2907arxt3906+9bcx53rxt2222arxt3904bcx56rxt-a64b1182b 1182b1184d1664
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KY 719
Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75
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2sk1973f52sk20412sk20422sk2094f5+102sk21032sa1036k2sa1037ak2sa1037akln2sa1455kru101ky 719122jktb163tktb143tk
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100V 2A MPT3
Abstract: 2SB1316 2SB1580 2SD1980 2SD2195 T100
Contextual Info: 2SB1580 / 2SB1316 Transistors Power Transistor −100V , −2A 2SB1580 / 2SB1316 zExternal dimensions (Unit : mm) 2SB1580 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.
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2sb15802sb1316-100v2sd2195+32sd1980100v 2a mpt3t100
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100V 2A MPT3
Abstract: 2SB1316 2SB1580 2SD1980 2SD2195 T100
Contextual Info: 2SB1316 Transistors Power Transistor −100V , −2A 2SB1316 zExternal dimensions (Unit : mm) 2SB1580 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups
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rkm 33 transistor
Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Contextual Info: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.
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fma10afma11aimb10aimb11a+16imb16imb17aimd10aimd14imd16aimh10arkm 33 transistorbkd transistordtd133hkabkd c6dtb133hkatransistor bjd2sa1885rkm 20 transistor2sc5274rkm transistor
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TA143E
Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0
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2sk1973f52sk20412sk20422sk2094f5+142sk2103ru101ru201ru901ta143e2sd 647 transistortransistor 2sc 733c4672144ek113zetransistor 2sa 2sb 2sc 2sd114eutc114ekata123je
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Contextual Info: 2SB1316 Transistors Power Transistor −100V , −2A 2SB1316 zExternal dimensions (Unit : mm) 2SB1580 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter.
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