2SB13 Search Results

2SB1335

Abstract: 2sd1855
Contextual Info: Inchange Semiconductor Product Specification 2SB1335 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1855 ・Low collector saturation voltage APPLICATIONS ・For low frequency power amplifier applications PINNING

transistor smd bh

Abstract: transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386
Contextual Info: Transistors SMD Type Low Frequency Transistor 2SB1386 Features Low VCE sat . VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

2SD2060

Abstract: 2SB1368
Contextual Info: Product Specification www.jmnic.com 2SD2060 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1368 ・Low collector saturation voltage: VCE SAT =1.7V(Max) at IC=3A,IB=0.3A ・Collector power dissipation: PC=25W(TC=25℃)

2sb1302

Contextual Info: Ordering number: E N 2 5 5 5 A 2SB1302 N0.2555A SA\YO PNP E pitaxial P lanar Silicon T ransistor High-Current Switching Applications Applications . DC-DC converters, motor drivers, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes . Low collector to emitter saturation voltage

Contextual Info: O rd e rin g n u m b e r : EN 3 1 7 5 2SB1325/2SD1999 No.3175 S A \Y O PNP/NPN Epitaxial Planar Silicon Transistors i Compact Motor Driver Applications F e a tu re s • Low saturation voltage •Contains diode between collector and em itter • Contains bias resistance between base and em itter

2SB1334

Abstract: 2SD1778 3CU500 1e0a
Contextual Info: h 7 'y sy /T ra n s is to rs 2SB1334 - 7 = 3 3 - / 9 fl ^ a j f c ^ ^ i a t S ^ / L o w F re q . P o w e r A m p . Epitaxial Planar P N P Silicon Transistor

2SB1347

Abstract: 2SD2029 SS 109
Contextual Info: Power T ransistors 2SB1347 2SB1347 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2029 U n it : mm 5.3max. 20.5max. • Features 3.0— • Very good linearity of DC current gain hFi • Wide area of safety operation (ASO)

A 933 S transistors

Abstract: 2SB1361 2SD2052 IS020
Contextual Info: Power Transistors 2SD2052 2SD2052 Silicon Triple-Diffused Planar Type Package Dimensions High Powe< Amplifier Complementary Pair with 2SB1361 • Features Unit *. mm 5.2max. ' / 3.2 , 15.5max. , 6.9min. • V ery good lin earity o f DC c u r re n t gain hKF

Contextual Info: UTC 2SB1386 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR DESCRIPTION The UTC 2SB1386 is an epitaxial planar type PNP silicon transistor. 1 FEATURES *Excellent DC current gain characteristics *Low VCE sat VCE(sat)= -0.35V (Typ) (Ic/IB = -4A/-0.1A)

2SD2052

Abstract: 2SD205 2SB1361
Contextual Info: Inchange Semiconductor Product Specification 2SD2052 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Wide area of safe operation ·Complement to type 2SB1361 APPLICATIONS ·Optimum for the output stage of a HiFi audio amplifier PINNING PIN

294a

Abstract: 2SB1361 2SD2052
Contextual Info: Power T ransistors 2SB1361 2SB1361 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2052 • Features • V ery good linearity o f DC current gain I i f e • W ide area o f sa fety operation (ASO)

Contextual Info: Transistors SMD Type Product specification 2SB1394 Features Contains input resistance R1 , base-to-emitter resistance (RBE). Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity,

w2a transistor

Abstract: transistor w2a 2SB1340 2SD1869 2SD1889 transistor 120v transistor w2a 40
Contextual Info: 2SB1340 2SD1889 Transistors I Power Transistor —120V, — 6A 2SB1340 •F e a t u r e s 1 ) Darlington connection for high DC current gain. 2 ) Bulll-ln resistor between base and em itter. 3 ) Built-In dam per diode. 4 ) Com plem ents the 2S D 1869. ^Absolute m axim um ratings ( T a = 2 5 'C )

2SB1325

Abstract: 2SD1999
Contextual Info: Ordering number : ENN3175A 2SB1325 / 2SD1999 PNP / NPN Epitaxial Planar Transistors 2SB1325 / 2SD1999 Compact Motor Driver Applications Features • • • • Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter.

2SD1888

Abstract: 2SB1339
Contextual Info: SavantIC Semiconductor Product Specification 2SD1888 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·Complement to type 2SB1339 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN DESCRIPTION

2SB1341

Contextual Info: SavantIC Semiconductor Product Specification 2SB1341 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications

2SB1373

Abstract: 2SD2066
Contextual Info: SavantIC Semiconductor Product Specification 2SB1373 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD2066 ·Wide area of safe operation APPLICATIONS ·For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SB1361

Abstract: 2SD2052
Contextual Info: SavantIC Semiconductor Product Specification 2SB1361 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD2052 ·High transition frequency ·Wide area of safe operation APPLICATIONS ·For high power amplification PINNING

2SB1347

Abstract: 2SD2029
Contextual Info: SavantIC Semiconductor Product Specification 2SB1347 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2029 ·Wide area of safe operation ·High transition frequency fT ·Optimum for the output stage of a Hi-Fi audio amplifier

2SB1103

Abstract: 2SB1390 DSA003644
Contextual Info: 2SB1390 Silicon PNP Triple Diffused ADE-208-870 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4 kΩ (Typ) 200 Ω (Typ) 3 2SB1390 Absolute Maximum Ratings (Ta = 25°C) Item

2SB1391

Abstract: 2SB791 DSA003644
Contextual Info: 2SB1391 Silicon PNP Triple Diffused ADE-208-871 Z 1st. Edition Sep. 2000 Application Power switching Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 2 kΩ (Typ) 200 Ω (Typ) 3 2SB1391 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SB1399

Abstract: 2SB955 DSA003644
Contextual Info: 2SB1399 Silicon PNP Triple Diffused ADE-208-873 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 2SB1399 Absolute Maximum Ratings (Ta = 25°C) Item

2SB1323

Abstract: 2SD1997
Contextual Info: Ordering number:EN3129 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1323/2SD1997 Compact Motor Driver Applications Features Package Dimensions • Contains input resistance R1 , base-to-emitter resistance (RBE). · Contains diode between collector and emitter.

2SB1390

Contextual Info: Inchange Semiconductor Product Specification 2SB1390 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING