2SB1334 Search Results

2SB1334

Abstract: 2SD1778 3CU500 1e0a
Contextual Info: h 7 'y sy /T ra n s is to rs 2SB1334 - 7 = 3 3 - / 9 fl ^ a j f c ^ ^ i a t S ^ / L o w F re q . P o w e r A m p . Epitaxial Planar P N P Silicon Transistor

2SB1334

Abstract: 2SD1778
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1334 DESCRIPTION •High Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE sat = -1.5V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1778

2SB1334A

Contextual Info: SavantIC Semiconductor Product Specification 2SB1334A Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

2SB596

Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
Contextual Info: - 52 - m % £ Type No. Manuf. = i# SANYO jpr ^ TOSHIBA S H NEC B ÍL HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI a — A ROHM 2SB 762 . «1 T 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB 762A fé T 2SB596 2SB703 2SB859 2SB942A 2SA1634 2SB 762B fé T

Contextual Info: I ' 7 > y 7 $ /Transistors 2SB1334 2SB1334 X f c T * * V T \sZf\s—rf& PNP v v =3 > h 7 > y X $ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. • ft* 1 1) VcE sat) /Dim ensions (Unit: mm) 'o V cE(sat)= -0.3 V (Typ.) ¿ 3 . 6 + 0.2 10.0 ±0.3 h

Nec K 872

Abstract: 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601
Contextual Info: 55 - s « T y p e No. tt € Manuf. m = SANYO JÎÏ TOSHIBA m a NEC ÍL S HITACHI Ä ± àfi F U JITSU fâ T MATSUS H I T A ^ ü MITSUB I S H I □ — A ROHM 2 SB S58 ÎL 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB 859 îl 2SB920 2SB595 2SB703A 2SB942A 2SA1634

2SB1335A

Abstract: 2SB1333 2SB1365 2SD2021 2SB1320A 2SB1353 2sb1355 2SB1335 2SB1342 2sb1357
Contextual Info: - 86 - Ta=250C, *EPÍÍTc=25T; m 2SB1320A 2SB1321A 2SB1322A 2SB1323 2SB1324 2SB1325 2SB1326 2SB1333 2SB1334 2SB1334A î± % fôT fòT & T H# Hi* H # a—A a —A D— A a —A ¿0 010 03 D— A 2SB1335A 2SB1339 2SB1340 2SB1341 2SB1342 2SB1343 2SB1344 2SB1346

Contextual Info: h 7 > v ' 7 $ / T ransistors 2SB1334 I tr$*y PNP y U □ > h 7 > y 7.$ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • D im e n s io n s U n it: m m 1 ) VcE(sat) V C E (s a t)= — 0 .5 V ( T y p . ) Ic / I b = — 3 A /-0 .3 A hFE 2) tlT l ' 5 0

2SB1334

Abstract: 2SD1778
Contextual Info: SavantIC Semiconductor Product Specification 2SB1334 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD1778 ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency

Contextual Info: ROHM CO L T D N7 " 4QE D • □□□SbSb /Transistors — '“ 2SB1334 “ ¿ g T ■RHM — — — 7^ 5 3 - / 9 î £ ° $ * y 7 J l ' 7 ° U - t & P N P y lJ 3 > b ÿ > y Z $ Mffl'tâWJjtmtymM/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA1015

Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385
Contextual Info: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 *-' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' * 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^

2SB557 TOSHIBA

Abstract: 2SB1314 toshiba 2sb554 2SB546A 2SB596 2sa483 2SB554 2SB54 2SB557 2SB857
Contextual Info: 564 565 . 566 y 566AK 2SB 566K 2SB 567 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 568 569 „ 510 571 572 „ 573 ^ 574 575 •576 ' 2SB 577 , 2SB 578 ^ 2SB 579 2SB 2SB 2SB 2SB 2SB 2SB 580581 582 583 584 585 2SB 2SB 2SB 2SB 2SB 2SB 586 595 596 598 599 600 2SB 601

b 817

Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
Contextual Info: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SD2037

Abstract: 2SC4354 2sd2041 2SD2036 2SB1335 2SB1359 2SD1832 2sd1856 2SD2034 2SB1293
Contextual Info: R OHN CORP □1 D E l ? f l a f l 1 cn -i" f nfiffirr DGDllta 3 W - I '-” I 7 ~ -Z 9 * & / D P i . ; ij 4 * ^ » p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji • TO-220, TO-220FP Types p - , * New Products

B1335A

Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A
Contextual Info: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 | 2SD 1763A 2SB 1186 | 2SB 1186A 2SD 2033

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

2SA985 NEC

Abstract: 2s8834 2SB56 2SB596 2SA985 toshiba 2sb555 2SB834 2SB508 2SB537 2SA836
Contextual Info: s € tt T y p e No. 2SB 153 2SB 154 2SB 155 2SB 176 " 2SB 302 2SB 370 2SB 370A 2 Sß 434 , □ SS a X 3: SAN YO ^ M TOSHIBA s t NE C il H IT ACHI ±L 2SB 561 ±L 31 2 SB 561 T 4 ii Ä S 2SB 435 ^ 2SB 444 0 a a iz 2SB 492 - = # 2SB 496 iL 2SB 502 Ä ä 2SB 443

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SB1185

Abstract: 2sb1569a 2sd2037 transistor
Contextual Info: Transistors TO-220 • T0-220FP • T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

Contextual Info: Transistors T0-220 • T0-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2sd1954

Abstract: 2SC5083 DTC144EVA 2SC2030 DTC114YLA 2SC4722 2SD1228M QR DTD123YV 2SC2675 DTB143TS
Contextual Info: I 1 »l i mi l i ATR \ Packaging \ Bulk Container C2 Code hpE \ Basic ordering unit pcs 2,000 8,000 2SA790M AB O 2SA874M PQR 2SA937AM PQRS 2SA937AMLN RS o o O o o o 2SB909M PQR © o 2SB910M PQR © © 2SB911M PQR © o 2S61042M PQR o Q 2SB1044M PQR o o