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    2SB595 Search Results

    2SB595 Datasheets (24)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SB595
    Micro Commercial Components PNP Silicon Power Transistor Original PDF 83.09KB 1
    2SB595
    Wing Shing Computer Components LOW FREQUENCY POWER AMPLIFIER(PNP EPITAXUAL) Original PDF 69.81KB 1
    2SB595
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 43.05KB 1
    2SB595
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 77.65KB 1
    2SB595
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 56.43KB 1
    2SB595
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 152.3KB 1
    2SB595
    Unknown Japanese Transistor Cross References (2S) Scan PDF 38.69KB 1
    2SB595
    Unknown Cross Reference Datasheet Scan PDF 39.51KB 1
    2SB595
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 57.72KB 1
    2SB595
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 44.6KB 1
    2SB595
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 48.69KB 1
    2SB595
    Unknown Transistor Replacements Scan PDF 74.03KB 1
    2SB595
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 113.22KB 1
    2SB595
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 113.14KB 2
    2SB595
    Unknown Scan PDF 36.96KB 1
    2SB595
    Unknown Transistor Substitution Data Book 1993 Scan PDF 34.54KB 1
    2SB595
    Unknown The Japanese Transistor Manual 1981 Scan PDF 104KB 2
    2SB595
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 40.49KB 1
    2SB595
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 89.58KB 1
    2SB595
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 136.94KB 1
    SF Impression Pixel

    2SB595 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components 2SB595

    POWER BIPOLAR TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SB595 12
    • 1 $8.43
    • 10 $4.21
    • 100 $4.21
    • 1000 $4.21
    • 10000 $4.21
    Buy Now

    2SB595 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SD525

    Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in nsn POWER AMPLIFIER APPLICATIONS. 0 3 .6 * 0.2 wÛ FEATURES: • High Breakdown Voltage : V q £q =100V • Low Collector Saturation Voltage : VcE sat = 2 .0V(Max.) • Complementary to 2SB595. • Recommended for 30W High Fidelity Audio


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    2sd5252sb595 PDF

    2sb595

    Abstract: 2sb595o 2SB595-O transistor 2sd525
    Contextual Info: 2SB595 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB595 POWER AMPLIFIER APPLICATIONS. U nit in mm • High Breakdown Voltage : V^EO = —100V • Low Colleetor-Emitter Saturation Voltage : VCE(sat)“ —2.0V (Max.) • Complementary to 2SD525.


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    2sb595--100v2sd5252sb595o+22sb595-otransistor 2sd525 PDF

    transistor 2sd525

    Abstract: 2SD525
    Contextual Info: TO SH IBA 2SD525 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in mm 10.3MAX. ¿ 3.6 ±0.2 High Breakdown Voltage : VCEO = 1 OV Low Collector Saturation Voltage : Vce ( s a t ) “ 2.0V (Max.) Complementary to 2SB595.


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    2sd5252sb595transistor 2sd525 PDF

    2SB595

    Abstract: 2SD525 AC75
    Contextual Info: TO SH IBA 2SB595 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. • • • • SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB595 High Breakdown Voltage : V qeo = —100V Low Colleetor-Emitter Saturation Voltage : VCE(sat)“ —2.0V (Max.) Complementary to 2SD525.


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    2sb5952sd525ac75 PDF

    2SB595

    Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB595 Unit in mm 10.3 MAX. 03.6ÍO.2 POWER AMPLIFIER APPLICATIONS. FEATURES: • High Breakdown Voltage : V^gQ-100V • Low Collector-Emitter Saturation Voltage : VcE sat =~2.0V(Max.) • Complementary to 2SD525. 1.5 MAX


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    2sb595gq--100v2sd525 PDF

    Contextual Info: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SB595 Features • • PNP Silicon Power Transistors With TO-220 package Power Amplifier applications Maximum Ratings Symbol V CEO V CBO


    Original
    2sb595o-220 PDF

    ce50a

    Contextual Info: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD525 Features • • • • • Silicon NPN triple diffused type High breakdown voltage Low Collector saturation voltage Complementary to 2SB595


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    2sd5252sb595o-220ce50a PDF

    2SD525

    Abstract: 2SB595
    Contextual Info: SavantIC Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB595 ·High breakdown voltage :VCEO=100V ·Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS ·Power amplifier applications


    Original
    2sd525o-220c2sb595 PDF

    S1854

    Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
    Contextual Info: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686


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    2sa4732sb5532sa656a2sb554+162sa657a2sb5952sa658a2sb5962sa7392sb673s1854s1854 amp4002mp30092sc33032sc520a2sc519amp4004s2055mp4001 PDF

    2SD525

    Abstract: 2SB595 NIC Components 2SD525
    Contextual Info: Product Specification www.jmnic.com 2SD525 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB595 ・High breakdown voltage :VCEO=100V ・Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS ・Power amplifier applications


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    2sd525o-220c2sb595nic components 2sd525 PDF

    2SB595

    Abstract: 2SD525 transistor 2sd525
    Contextual Info: 2SB595 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD525 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


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    2sb595o-2202sd525-100v+1transistor 2sd525 PDF

    2SB595

    Abstract: 2SD525
    Contextual Info: 2SD525 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB595 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


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    2sd525o-2202sb595 PDF

    2sb595

    Abstract: 2SD525 100v pnp to220c
    Contextual Info: SavantIC Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD525 ·High breakdown voltage :VCEO=-100V ·Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS ·Power amplifier applications


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    2sb595o-220c2sd525-100v+1100v pnp to220c PDF

    Nec K 872

    Abstract: 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601
    Contextual Info: 55 - s « T y p e No. tt € Manuf. m = SANYO JÎÏ TOSHIBA m a NEC ÍL S HITACHI Ä ± àfi F U JITSU fâ T MATSUS H I T A ^ ü MITSUB I S H I □ — A ROHM 2 SB S58 ÎL 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB 859 îl 2SB920 2SB595 2SB703A 2SB942A 2SA1634


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    2sb8242sb5962sb7032sb942+162sb13342sb9202sb5952sb703a2sb942a2sa1634nec k 8722sa11842sb13062sb14792sa10152sb8732sb10862sb5482sb14802sb601 PDF

    2SD525

    Contextual Info: 2SD525 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS. jZ Í3 .6 ± 0 .2 FEATURES: • High Breakdown Voltage : VCEO=100V ■ Low Collector Saturation Voltage : VCE sat =2.0V(Max.) • Complementary to 2SB595. ■ Recommended for 30W High Fidelity Audio


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    2sd5252sb595-55vl50 PDF

    transistor 2sd525

    Abstract: 2SD525 2SB595
    Contextual Info: TO SH IBA 2SD525 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in mm 10.3MAX. High Breakdown Voltage : VCEO = 1 OV Low Collector Saturation Voltage : V qe (sat) “ 2.0V (Max.) Complementary to 2SB595. Recommend for 30W High Fidelity Audio Frequency Amplifier


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    2sd5252sb595transistor 2sd525 PDF

    2SB595

    Abstract: transistor 2SB595 transistor 2sd525 2SD525
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB595 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -2.0(V)(Max)@IC= -4A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·Complement to Type 2SD525


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    2sb595-100v2sd525transistor 2sb595+1transistor 2sd525 PDF

    2SB595

    Abstract: 2SD525
    Contextual Info: Inchange Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD525 ・High breakdown voltage :VCEO=-100V ・Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS


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    2sb595o-220c2sd525-100v PDF

    2SB595

    Abstract: 2SD525
    Contextual Info: JMnic Product Specification 2SB595 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD525 ・High breakdown voltage :VCEO=-100V ・Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS ・Power amplifier applications


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    2sb595o-220c2sd525-100v PDF

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


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    2n37132n37142n37152n3716+162n37892n37902n37912n37922n43402n4340sb13752sk270a2sk150amg15g1al22sa1051bmg50g2cl1mg100g1al22sa1015a1265nmg100g1al1 PDF

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


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    2n37132n37142n37152n3716+162n37892n37902n37912n37922n43402n4340s2sk 150amg100g1al22sd13652sc2461 b2sk302sc102c366gb1375mg15g1al21265n PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


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    o-126t0-220abo-2202sc4544+132sc44482sc36122bc4201transistor 2sa 2sb 2sc 2sds-au27ms2000a inverterp4005s-av21hs-au273182n2sb 834 transistortransistor 2sc4288adrive ic 2sc3346 PDF

    C3182N

    Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
    Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn


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    2sa512sa572sc32812sd1571+10c3182nc3888a2sd 34202sc22682sc2073-2ep 14083884a3182n2sd 388a2sa855 PDF

    Contextual Info: T ^ H T B T r r m t R r r E / o H 9097250 TOSHIBA Sh ï o j - D T ^ TEH7250 D007714 S DISCRETE/OPTO> SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS. 10.3MAX. 0S.6±:O .Z FEATURES: • High Breakdown Voltage : VCEO=100V • Low Collector Saturation Voltage : VCE(sat =2.0V(Max.)


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    teh7250d0077142sb595 PDF