2SA1634
Abstract: 2SC4007 DC-DC converter 5V 1A
Contextual Info: JMnic Product Specification 2SA1634 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC4007 ・Low collector saturation voltage APPLICATIONS ・For medium speed,electrical supply and DC-DC converter applications PINNING
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2sa1634o-2202sc4007dc-dc converter 5v 1a |
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2SC4007
Abstract: 2SA1634
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1634 Silicon PNP Power Transistors DESCRIPTION • With T 0 2 2 0 package • Complement to type 2SC4007 • Low collector saturation voltage APPLICATIONS • For medium speed .electrical supply * and DC-DC converter applications
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2sa1634t02202sc4007vce-12v |
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SA1673
Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
Contextual Info: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668
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2sa16152sa1615-z2sa16162sa1617+122sa16182sa16192sc4362sc-592sa16552sc4363sa16732sa16232sc43872sa1612sa16702sa1671
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Contextual Info: ROHM CO LTD 40E TÔEÛTTT D 00054b? h 7 > y ^ $ / I ransistors 2SA1634 S Ü 1 @ 34 2 S E1RHM 7 ^ S 3 -J 9 2 L \ d $ * y 7 J \ s 7 ° \ s -j-m P N P y lJ = l > h 7 > v ^ ^ • m SÜ-^lVtVvJlT Epitaxial Planar P N P Silicon Transistor \t'i£l2i/'Dimensk>ns Unit: mm
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00054b2sa16342sc4007 |
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2SC4007
Abstract: 2SA1634
Contextual Info: SavantIC Semiconductor Product Specification 2SA1634 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC4007 ·Low collector saturation voltage APPLICATIONS ·For medium speed,electrical supply and DC-DC converter applications
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2sa1634o-2202sc4007 |
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2SB596
Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
Contextual Info: - 52 - m % £ Type No. Manuf. = i# SANYO jpr ^ TOSHIBA S H NEC B ÍL HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI a — A ROHM 2SB 762 . «1 T 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB 762A fé T 2SB596 2SB703 2SB859 2SB942A 2SA1634 2SB 762B fé T
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2sb8242sb5962sb7032sb859+112sb9422sb13342sb942a2sb6862sb7732sb773a2sa12322sb 7732sb9652sa1283773a
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2SA1634
Abstract: 2SC4007 2sa163 2SC40
Contextual Info: Inchange Semiconductor Product Specification 2SA1634 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC4007 ·Low collector saturation voltage APPLICATIONS ·For medium speed,electrical supply and DC-DC converter applications
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2sa1634o-2202sc40072sa163+12sc40
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Nec K 872
Abstract: 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601
Contextual Info: 55 - s « T y p e No. tt € Manuf. m = SANYO JÎÏ TOSHIBA m a NEC ÍL S HITACHI Ä ± àfi F U JITSU fâ T MATSUS H I T A ^ ü MITSUB I S H I □ — A ROHM 2 SB S58 ÎL 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB 859 îl 2SB920 2SB595 2SB703A 2SB942A 2SA1634
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2sb8242sb5962sb7032sb942+162sb13342sb9202sb5952sb703a2sb942a2sa1634nec k 8722sa11842sb13062sb14792sa10152sb8732sb10862sb5482sb14802sb601
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2SA1634
Abstract: 2SC4007 D602
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1634 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = -1.5V(Max)@ IC= -2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V (Min) ·Wide Area of Safe Operation
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2sa16342sc4007d602 |
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Contextual Info: 2SA1634 /T r a n s is to r s 2SA1634 PNP > U =¡ > 1 = * r V T7 Epitaxial Planar PNP Silicon Transistor • • í ' W Í ' ñH í E l/ D im e n s io n s U n it : h m m •7 1 ) V c E (s a t) ^'"16 * ' o VCE(sat)= - 0 .3 V (T yp .)lc/lB = - 2 A / —0.2A
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2sa16342sc4007100cm |
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2sa1634
Abstract: E12M
Contextual Info: h ~7 > v 3- £ /Transistors 2SA1634 Epitaxial Planar PNP Silicon Transistor 1&Ji>,l£ii2j*illifll/L o w Freq. Power Amp. • £ l-Jfi^ f;£E l/D im en sio n s Unit: mm • « * 1 ) V C E ( s a t) * ''f fi ; t 'o VCE ( s a t ) = — 0 .3 V (Typ.) ¿ 3 .6 ± 0 .2
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2sa1634sa1634e12m |
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2SB816
Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3
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2sa12532sb8492sb7752sa1264+142sb9652sb13712sb13722sb8162sa12652sb12122sb9212sb8732sa11202sb1085b2sb 9892sb9412sc43412sb1416
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2SB557 TOSHIBA
Abstract: 2SB1314 toshiba 2sb554 2SB546A 2SB596 2sa483 2SB554 2SB54 2SB557 2SB857
Contextual Info: 564 565 . 566 y 566AK 2SB 566K 2SB 567 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 568 569 „ 510 571 572 „ 573 ^ 574 575 •576 ' 2SB 577 , 2SB 578 ^ 2SB 579 2SB 2SB 2SB 2SB 2SB 2SB 580581 582 583 584 585 2SB 2SB 2SB 2SB 2SB 2SB 586 595 596 598 599 600 2SB 601
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2sb5962sa16342sb5442sa496+142sb5622sa6832sb10352sa9342sa10692sb557 toshiba2sb1314toshiba 2sb5542sb546a2sa4832sb5542sb542sb5572sb857
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2SB1335A
Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)
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3sk212o-220o-220fp2sd1562+152sb10852sd17632sb11862sd20332sb13532sd1562a2sb1335a2sd20372sd206128c432sb13572sb13592sd20412sd20962sd1856
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2sb11862sb1186a2sa13042sa1306+162sa13052sb12742sb10152sb11332sb12872sb1185rtip144crtin141crtin141s2sd947 equivalent2sd612kequivalent of transistor 2sa1115rtin241crtip2412sd880 equivalentrtin140c
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SB1335A
Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.
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o-220t0-220fpo-220fno-220fp+11t0-220sb1335a2sd20612sd2033a2sb14962sb1342transistor 2sd20912sd23942sb13702sc43542sd2041
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B1335A
Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A
Contextual Info: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 | 2SD 1763A 2SB 1186 | 2SB 1186A 2SD 2033
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tq-220o-22qfp2sc4505sdp901+152sc43542sd20612sb14962sb13342sc4572sa1634b1335ad2033ad1855ad2037b1186a2sb1335ad2038b 1186ab1085a
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C2021M
Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)
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2sc2021ljne2sb8212sa937aln\2sc2021ln+162sb12762021m2sa937am2sb7372sd7862sa1137c2021mb1568mosfet ftr 032sc1b152sa1904mosfet ftr 03-e2sc2021e2sc1740 transistor2sk22952s0240
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2SA818
Abstract: 2SB681 2SB849 2SC4341 2SB681 TOSHIBA 2SB601 2SB686 2SB688 2SB558 2sb669
Contextual Info: 49 - S € Type No. a « Manuf. E ft SANYO 2SB 648 B ÍL 2SA1209 2SB 648A S ÍL 2SA1209 2SB 649 ÍL 2SB 649A S ÎL 2SB 650 H ÎL 2SB 653A ÍL 2SB 654A ÎL 2S8 655A i 2SB 668 • 2SA1011 Ä TOSHIBA Is NEC ÍL HITACHI i t i FUJITSU fâ T MATSUSHITA h m MITSUBISHI
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2sa12092sa11422sa8182sa1284+142sa12202sb10862sa10112sa9682sa1220a2sb6812sb8492sc43412sb681 toshiba2sb6012sb6862sb6882sb5582sb669
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toshiba 2SB755
Abstract: 2SAB12 2SB755 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
Contextual Info: 50 - m. € £ Type No. 2SB 698 - Manuf. n = SANYO M. 2SA950 2SA952 2SA1232 * B ÍL 2SB817 2SB 700 - B ÍI 2SB817 2SB755 2SB 700A B AL 2SB817 2SB755 B ÍL 2SB755 B ÍL 2SB756 2SB 703 , 2SB 703A 2SB 705 2SB 710 tö T MATSUSHITA 2SA719 & — MITSUBISHI 2SA1398
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2sa9502sa9522sb5612sa719+142sa13982sa15152sb8172sb7552sa1232toshiba 2sb7552sab122sb681 toshiba2sb6812sb700b2sa8182sa11812sb7562sb 731
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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2SB1185
Abstract: 2sb1569a 2sd2037 transistor
Contextual Info: Transistors TO-220 • T0-220FP • T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.
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o-220t0-220fpt0-220fno-220fp+6o-220fn2sa16342sb13692sb11852sb1569a2sd2037 transistor
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Contextual Info: Transistors T0-220 • T0-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.
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t0-220t0-220fpo-220fno-220fp+3o-2202sa16342sb1369
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