2SA161 Search Results

marking C15

Abstract: smd MARKING c17 2sa1612 MARKING SMD PNP TRANSISTOR V5090 smd transistor marking c17
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA1612 Features High DC current gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -120 V Collector to emitter voltage VCEO -120

2SC4177

Contextual Info: 2SC4177 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES    High DC Current Gain. High Voltage. Complementary to 2SA1611 A L 3 3 C B

m7 smd diodes

Abstract: smd m7 smd marking m5 M7 diodes kexin smd marking m4 m6 smd m7 smd MARKING marking of m7 diodes marking smd m7 2SA1611
Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxia 2SA1611 Features High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50

2SA1615

Abstract: 2SA1615-Z C11531E
Contextual Info: DATA SHEET SILICON POWER TRANSISTORS 2SA1615, 1615-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed.

SA1673

Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
Contextual Info: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668

6209A

Abstract: TC-6209A 2SA1611 04 NG 537
Contextual Info: zr— ^ — h N E C jr vU = i> 2SA1611 P N P X fcf£ * V # V=l> M m m m sm mm « "J o S / J\ f é W f ê T * U , /N'T 7 U KlCffl t 2.1 L T ft T - - T o < ¥ ii : mm ± 0.1 1.25 ±0.1 02SC4177 t 3 > y i j * > $ V ! : ' f è ï ï ? È £ T o o v m u s m ifX È

Hitachi 2SA

Abstract: Hitachi DSA002754
Contextual Info: 2SA1617 Silicon PNP Epitaxial Application High voltage amplifier Outline 2SA1617 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5

2SC4208A

Abstract: 2SA1619 2SA1619A 2SC4208
Contextual Info: Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A Unit: mm 5.0±0.2 4.0±0.2 ● • Absolute Maximum Ratings Parameter Collector to Ta=25˚C

2SA1619

Abstract: 2SA1619A 2SC4208 2SC4208A
Contextual Info: Transistor 2SA1619, 2SA1619A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC4208 and 2SC4208A Unit: mm 5.0±0.2 Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertion

Y347

Contextual Info: DATA SHEET NEC ElttTBON DEVICE / / SILICO N TRAN SISTO R _ _ / 2SA1610 HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in m illim eters • High Speed Switching : t on = 9 .0 ns TY P. • High f T : f T = 1 800 M H z TYP.

Contextual Info: SILICON TRANSISTOR 2SA1611 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR FE A T U R E S PA CKA G E D IM E N S IO N S * C o m p le m e n t a ry to 2 S C 4 1 7 7 * H ig h D C C u rre n t G a in : hFE * 2 0 0 T Y P . V ce « -6 .0 V, lc = -1 .0 m A

nt226

Abstract: 2SA1612
Contextual Info: DATA SHEET SEC SILICON TRANSISTOR ELECTRON DEVICE 2SA1612 AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIALTRANSISTOR FEA T U R E S • C om plem entary to 2SC4180 • High DC C u rrent G ain: hFe 500 T Y P . VCE * - 6 . 0 V , lc - - 1 . 0 m A A B S O L U T E M A X IM U M R A T IN G S

2SA1618

Abstract: 2SC4207
Contextual Info: 2SA1618 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1618 ○ 低周波増幅用 単位: mm • スーパーミニ (5 端子) パッケージに 2 素子を内蔵しています。 • 2 素子間のペア性が良い。

Contextual Info: 2SA1618 Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. + 0.2 2.8 -0 .3 • Small Package Dual Type • High Voltage and High Current : VcEO= —50V, Iç; = —150mA (Max.) • High hpE : hFE = 120~400 • Excellent hyjg Linearity

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4177 TRANSISTOR NPN FEATURES SOT–323  High DC Current Gain  Complementary to 2SA1611  High Voltage APPLICATIONS  General Purpose Amplification 1. BASE

2sa161

Abstract: 2SA1617
Contextual Info: HITACHI 2SA1617 SILICON PNP EPITAXIAL HIGH VOLTAGE AMPLIFIER G'n h i 3. E m itte r 2 . Li-nc 1. Collector tPimciiSiixii in mni M PAK) ABSOLUTE MAXIMUM RATINGS (T a= 2 5 °C ) Item S ym bol C o llecto r to base voltage MAXIMUM COLLECTOR DISSIPATION CURVE

2SA1611

Abstract: 2SA1611M6 marking M6 Diode marking m7 M7 marking 2SC4177 2SA1611-M7 marking m5 600 marking
Contextual Info: 2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 A L

k137

Abstract: 2SA1619 2SA1619A 2SC4208 2SC4208A
Contextual Info: Transistor 2SA1619, 2SA1619A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC4208 and 2SC4208A Unit: mm 5.0±0.2 4.0±0.2 Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertion

2SA1615

Abstract: 2SA1615-Z
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1615,1615-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed.

2SA1619

Abstract: 2SA1619A 2SC4208 2SC4208A
Contextual Info: Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A Unit: mm 5.0±0.2 4.0±0.2 • Absolute Maximum Ratings Parameter Ta=25˚C Symbol Collector to

2SA1614

Contextual Info: Power Transistors 2SA1614 Silicon PNP triple diffusion planar type For high-speed switching Unit: mm ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –400 V Collector to emitter voltage VCEO –400

Contextual Info: SILICON TRANSISTO R 2SC4177 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR FEATURES P A C K A G E D IM E N S IO N S • Complementary to 2SA1611 in m illim eters • High DC Current Gain: hpe = 200 TYP. V ce = 6-0 V, tc - 1.0 mA

2SC3735

Abstract: 1SS153
Contextual Info: Q U ICK REFERENCE GUIDE 3 TABLE OF SAME CH ARACTERISTICS IN DEFERENT PACKAGES 3 PIN SU P E R M IN I M O L D (FIG. 6) 3 PIN M IN I M O L D (FIG 4} FM /A M M IX ./ O SC / IF 2SC4179 2SC1009A AF A M P 2SA1611 2SA812 2SA1612 2SA811A A P P LIC A T IO N Driver, Output

2SA1615

Abstract: 1615
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistors 2SA1615,1615-Z PNP エピタキシアル形シリコン・トランジスタ 高速度スイッチング ★ 飽和電圧が低いため，小形外形でありながら大電流の制御が可能で，