2SA1621 Search Results

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4210 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • High hFE: + 0.5 25 -0.0 3 + 0.25 1.5 - 0.15 h FE=100~320 -1 • 1 Watts Amplifier Applications. • Complementary to 2SA1621 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL

2SA1621

Abstract: 2SC4210
Contextual Info: 2SC4210 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4210 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SA1621 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)

Contextual Info: TO SHIBA 2SA1621 2 S A 1 621 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO POWER AMPLIFIER APPLICATIONS + 0.5 2 .5 - 0 . 3 • • High hpE : hpE = 100~320 Complementary to 2SC4210 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

SA1673

Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
Contextual Info: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668

Contextual Info: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: hFE = 100~320 • Complementary to 2SC4210 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Contextual Info: 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 • Complementary to 2SA1621 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1621 Unit in mm + 0.5 2.5 - 0.3 AUDIO POWER AMPLIFIER APPLICATIONS. • High hpE: hFE~100~320 • Complementary to C4210 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT vCB0 -35 V Collector-Emitter Voltage vCE0 -30

2SA1621

Abstract: 2SC4210
Contextual Info: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: hFE = 100~320 • Complementary to 2SC4210 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SA1621

Abstract: 2SC4210
Contextual Info: 2SC4210 TO SH IBA 2SC4210 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : Complementary to 2SA1621 + 0.5 2 . 5 - 0.3 = 100~320 + k 1-5 0.25 - ° - 15 >i I- MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: T O S H IB A 2SC4210 2SC4210 T O SH IB A TRA NSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS A U D IO PO W ER AM PLIFIER A PPLICATIO NS • • High DC Current Gain : Complementary to 2SA1621 U n it in m m = 100~320 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC4210 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Contextual Info: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • • Unit: mm High hFE: hFE = 100 to 320 Complementary to 2SC4210 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SA1621

Abstract: 2SC4210
Contextual Info: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • High hFE: hFE = 100~320 · Complementary to 2SC4210 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SC4210

Abstract: 2SA1621
Contextual Info: 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 · Complementary to 2SA1621 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SA1621

Abstract: 2SC4210
Contextual Info: 2SA1621 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1621 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC4210 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)

2SA1621

Abstract: 2SC4210
Contextual Info: 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 • Complementary to 2SA1621 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

sc4210

Abstract: 2SA1621 2SC4210
Contextual Info: TOSHIBA 2SC4210 2SC4210 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • High DC Current Gain : hjpg — 100~320 Complementary to 2SA1621 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SA1621

Abstract: 2SC4210 A1621
Contextual Info: TO SHIBA 2SA1621 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 621 AUDIO PO W ER AM PLIFIER APPLICATIONS Unit in mm + 0.5 2.5 - 0.3 High hpE : hpE = 100~320 • Complementary to 2SC4210 + 0.25 + 0.1 0 .4 - 0 .0 5 • i SYMBOL CHARACTERISTIC

2SA1621

Contextual Info: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC4210 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SA1621

Abstract: 2SC4210 A1621
Contextual Info: 2SA1621 TO SH IBA 2 S A 1 621 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS + 0.5 • • High hpE • hpE = 100~320 Complementary to 2SC4210 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs