2SA1618 Search Results

SA1673

Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
Contextual Info: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668

2SA1618

Abstract: 2SC4207
Contextual Info: 2SA1618 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1618 ○ 低周波増幅用 単位: mm • スーパーミニ (5 端子) パッケージに 2 素子を内蔵しています。 • 2 素子間のペア性が良い。

Contextual Info: 2SA1618 Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. + 0.2 2.8 -0 .3 • Small Package Dual Type • High Voltage and High Current : VcEO= —50V, Iç; = —150mA (Max.) • High hpE : hFE = 120~400 • Excellent hyjg Linearity

2sa161

Abstract: 2sc4207 2SA1618
Contextual Info: 2SA1618 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1618 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) · High voltage and high current: VCEO = −50 V, IC = −150 mA (max) · High hFE: hFE = 120~400

Contextual Info: TOSHIBA 2SA1618 TOSHIBA TRANSISTOR SILICON PNP EPITAXIALTYPE PCT PROCESS 2 S A 1 618 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. + 0.2 2 .8 - 0 .3 • Small Package (Dual Type) • High Voltage and High Current : v CEO= -5 0 V , I e = -150m A (Max.)

2SA1618

Abstract: 2SC4207
Contextual Info: TO SH IBA 2SA1618 2 S A 1 618 TOSHIBA TRANSISTOR SILICON PNP EPITAXIALTYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. + 0.2 2 .8 -0 .3 • Small Package (Dual Type) • High Voltage and High Current : VCEO = —50V, Iq = —150mA (Max.)

2SA1618

Abstract: 2SC4207
Contextual Info: TOSHIBA 2SA1618 2 S A 1 618 TOSHIBA TRANSISTOR SILICON PNP EPITAXIALTYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. + 0.2 2.8-0.3 • Small Package (Dual Type) • High Voltage and High Current : VCEO = —50V, Iq = —150mA (Max.)

Contextual Info: 2SA1618 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1618 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE: hFE = 120~400

2sa161

Abstract: 2sc4207 2SA1618
Contextual Info: 2SA1618 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1618 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE: hFE = 120~400

Contextual Info: 2SA1618 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1618 Audio Frequency General Purpose Amplifier Applications • Unit: mm Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE: hFE = 120~400

Contextual Info: 2SA1618 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1618 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE: hFE = 120 to 400

2SA1618

Abstract: 2SC4207
Contextual Info: 2SA1618 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1618 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE: hFE = 120~400

marking HJR

Contextual Info: TOSHIBA 2SA1618 TOSHIBA TRANSISTOR SILICON PNP EPITAXIALTYPE PCT PROCESS 2 S A 1 618 U n it in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. + 0.2 2.8 -0 .3 • S m all Package (D u al Type) • H ig h Voltage and H ig h C urrent - v C EO = - 5 0 V , Iq = -1 5 0 m A (M ax ,)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SA1618

Abstract: 2SC4207
Contextual Info: 2SC4207 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4207 ○ 低周波増幅用 単位: mm • スーパーミニ (5 端子) パッケージに 2 素子を内蔵しています。 • 2 素子間のペア性が良い。

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4207 Unit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. +0.2 2.8 - 0 3 + 0.2 1 .6-0.1 • Small Package Dual Type • High Voltage and High current : VCEO = 50V, Iq = 150mA (Max.) • High hj>E : hEF = 120-700

2SC4142

Abstract: T0220MF 2SC4212 2SC4211 2SC4239 2SC4202 2SA1619A 2SA1623 2SC4201 2SC4204
Contextual Info: - 192 - n n Ta=25'Ct *Ep(àTc=25‘ t 3$ £ tt a g V’ cBO VcEO (V) (V) Ic(pc) (A) 2SC4201 * 2 HS Sf/CBT Vont 100 100 0.5 2SC4202 j r s HS SÏ/CST Vout 100 100 0.5 2SC4204 H # 2SC4205 p — A t± m % Pc Pc* I.CBO. (W) (W) (jttA) 1.5 (max) (min) (Ta=25D0 )

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *