T0220MF Search Results

2SB1267

Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta = 25 "C VCB(sat) max @ 1C •IB Applications VCBO (V) VCEO to (V) (A) PC (W ) (2 ) VCE(sat) fr @ Vce hre @ V C E lC max (mV) 1C (A) (mA) te hFE XSF

2SC4630LS

Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
Contextual Info: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )

vertical IC tv crt

Abstract: 2SC4566 2SA1751 2SC3790 2SA1352 2SA1380 2SA1381 2SA1875 2SC3416 2SC3502
Contextual Info: Continued fra.71 D.-ewouS oage Absolute maximum ratings Electrical characteristics Ta = 25 Package V tfiu VcEO (V ' (V) Vcao • (V) ; le (A) Pc (W) T, (C ) ICBO max @ Vcb f0 ,¡«Cl Ic b o max Vcb h fE @ Vce - lc tlFE Ci . *T Vce ■ lc Vce Ic tr Vce 2SC4827

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

2SD1915

Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
Contextual Info: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915

2sc4710

Contextual Info: S4ÜV0 T r a n s i s t o r s for V e r y H i g h - D e f i n i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t Use 3 otc D y n a m i c s F o c u s U s e (No picture ever out of focus with better focus c h a r a c t e r i s t i c s )

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

sanyo transistor tt series

Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
Contextual Info: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.

2SC4142

Abstract: T0220MF 2SC4212 2SC4211 2SC4239 2SC4202 2SA1619A 2SA1623 2SC4201 2SC4204
Contextual Info: - 192 - n n Ta=25'Ct *Ep(àTc=25‘ t 3$ £ tt a g V’ cBO VcEO (V) (V) Ic(pc) (A) 2SC4201 * 2 HS Sf/CBT Vont 100 100 0.5 2SC4202 j r s HS SÏ/CST Vout 100 100 0.5 2SC4204 H # 2SC4205 p — A t± m % Pc Pc* I.CBO. (W) (W) (jttA) 1.5 (max) (min) (Ta=25D0 )

k669 transistor

Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Contextual Info: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r

C4106 transistor

Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
Contextual Info: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower

SPD221P

Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
Contextual Info: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).

bu5080

Abstract: 2SD1710 BU508A SANYO 2SD1650 bu5080f 2SD1877 2SD1878 2SD1880 2sd1652 2SD1886
Contextual Info: SAfíYO T r a n s i s t o r s f o r T V D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t Use In recent years the development of new media has greatly changed the contents of information to be communicated and the amount of visual information has increased remarkably. For these circumstances Sanyo has developed horizontal deflection output-use

F527S

Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553
Contextual Info: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.

Contextual Info: SAtfYO P o w e r S c h o t t k y B a r r i e r D i o d e s For L a r g e - S i g n a l Use Sanyo Schottky barrier diodes (SBD) have been developed by our original technology. They are available for making sets smaller in size and lighter in veight. Sanyo power SBDs with breakdown voltages of 50V, 90V and 180V can be applied to various uses.

High-speed switching

Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 25 hFE@VCE • 1C VCBO (V VCE0 (V) W 1C (A) PC (W) (? ) hFE VCE (V) V) f r e v c E ' 1C 1C (A) fr (MHz) VCE (V) Ic (A) tf(toff) max

2sa128

Contextual Info: í?/píVO Low-Saturat ion Vol tage Seri es T0“220, MF, ML Pack g > A p p l i c a t i o n s ♦ Relay drivers. * High-speed inverters. * Conve r te r s . * H igh-cu r ren t switchinf! F e a t u r e s * Low VCE(sat). * Highly resistant to breakdown because of wide ASO. * Fast switching

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

SB3009

Abstract: SB30-09 SB4005
Contextual Info: SAfiYO Power Sanyo They Sanyo S c h o t t k y B a r r i e r D i o d e s For L a r g e - S i g n a l Schottky barrier diodes (SBD h a v e b e e n d e v e l o p e d by o u r o r i g i n a l technology. a r e a v a i l a b l e for m a k i n g se ts s m a l l e r in si ze an d l i g h t e r in we ig h t.

NPN Transistor 600V SC-62

Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Contextual Info: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and

2SC3253

Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
Contextual Info: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t

Contextual Info: SA0YO SANYO Discrete Device Package Out 1ines unit:mm Large-Signal Transistors Smal1-Signal Transistors SMP, SMP-FD, T0-220, T0-220ML, T0-220FI (LS), T0-220MF, T0-3PB, T0-3PML, T0-3PBL, T0-3JML. Outlines SMCP, MCP, CP, CP4/5/6, PCP, PCP4/5, XP5/6, TP, TP-FA, MFP6,

2SB511

Abstract: 2SC2078 2SC4030 2SA1011 2SC2344 2SC4031 2SC4493 2SC4572 2SC4578 2SC4579
Contextual Info: SANYO Large-signal Transistors For high-frequency, high-voltage and general purpose use We have other large-signal transistors which were not included in any classified types nor packages in this document. They are for high frequency, high voltage and general purpose use, and are shown below.