2SB1467 Search Results

2SB1467

Contextual Info: Ordering number:EN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2041A Features [2SB1467/2SD2218] · Micaless package facilitating mounting.

Contextual Info: Ordering number:ENN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2041A Features [2SB1467/2SD2218] · Micaless package facilitating mounting.

Contextual Info: [ Ordering number: EN3363 I SA\YO ' I 2SB1467/2SD2218 No.3363 PNP/NPN Epitaxial Planar Silicon Transistors 30V/8A Switching Applications Applications • Relay drivers, high-speed inverters, converters Features • Micaless package facilitating mounting • Low collector-to-emitter saturation voltage: VcE sat = • •0.5V(PNP), 0.4V(NPN) max

25B14

Abstract: 2SB1467 2SD2218 SB146
Contextual Info: Ordering number: EN3363 2SB1467/2SD2218 No.3363 PN P/N PN Epitaxial P lan ar Silicon Transistors G eneral H igh-current Switching Applications A pplications • Relay drivers, high-speed inverters, converters F e a tu r e s • M icaless package facilitating m ounting

2SB1496

Abstract: 2SB1466 2SB1516 2sb148 2SB1464 2SB1465 2SB1467 2SB1468 2SB1469 2SB1470
Contextual Info: - 92 - Ta=25t5. *EP(3Tc=25?C £ 2SB1464 2SBI465 2SB1466 2SB1467 2SB1468 2SB1469 2SB1470 2SB1471 2SB1472 2SB1473 ni-m ine ¿0014l 0 2SB1488 2SB1489 2SB1490 2SB1492 2SB1493 2SB1494 2SB1496 2SB1498 2SB1500 2SB1501 2SB1502 2SB1503 2SB1504 2SB1505 2SB1507 2SB1508

Contextual Info: Continued from previous page Electrical characteristics T a = 25 t Absolute m uknum ratings hreevcEic VC Blnt) nux 0 1C • IB Type No. type AppRcatloas VCBO (V ) VCEO M 1C (A ) PC (W ) (8 > VCE(ul) max GnV) 1C (A ) IB (m A) hFE VCE (V ) frevcE-ic 1C (A )

2SD313

Abstract: transistor 2sC3781 2SD1159 2sa128
Contextual Info: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used

SB145

Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
Contextual Info: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SA1622

Abstract: 2SA1699 2sa1015 2SA1586 2s8817 2SA1162 2SA1638 2SA1782 2SA1018 2SB1198K
Contextual Info: m £ Type No. 2SA 1614 2SA 1615 , 2SA 1615Z 2SA 1616 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 1617 16181619 1620 1621 ^ 1622 ' 1623 1624 1625 1626 1628 1629 1630 , 1631 1632 1633 ' 1634 1635 • 1636 1637

2sa128

Contextual Info: í?/píVO Low-Saturat ion Vol tage Seri es T0“220, MF, ML Pack g > A p p l i c a t i o n s ♦ Relay drivers. * High-speed inverters. * Conve r te r s . * H igh-cu r ren t switchinf! F e a t u r e s * Low VCE(sat). * Highly resistant to breakdown because of wide ASO. * Fast switching

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

2SC3253

Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
Contextual Info: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2SB1013

Abstract: 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564
Contextual Info: 60 - $! tt « Type No. 2SB 1013 v 2SB 1014 ^ 2S8 1015 - 2SB 1016 , 2SB 1017 2SB 1018 2SB 1019 « Manuf. -_ 3IC SANYO H. S S TOSHIBA b m NEC ±L HITACHI m ± FU JITSU i3 T fc' MATSUSHITA = m M IT SU B ISH I □ - Jx ROHM 2SA1160 2SB1068 2SB976 2SB1426 2SA1020

2SB1267

Contextual Info: C o n tin u e d fro m p re v io u s p a g e Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 °C VcHsat) max @ lc - I b ; Applications VcBO (V) VCEO (V) lc (A) Pc (W) Ti (°C) ; VcE(sat) max (mV) lc (A) Ib (mA) ! It @ VCE •te