2SA1022 Search Results

Contextual Info: Product specification 2SA1022 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High transition frequency fT. 0.4 3 Features 1 0.55 Mini type package,allowing downsizing of the equipment and automatic 2 insertion through the tape packing and the magazine packing.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06

2SA1022

Abstract: 2SC2295
Contextual Info: Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 1.9±0.1 Ta=25˚C Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Collector current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1

2SA1022

Abstract: 2SC2295
Contextual Info: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT.

2SA1022

Abstract: 2SC2295
Contextual Info: Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SA1022

Abstract: 2SC2295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95)

2sa10

Abstract: 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1012 2SA1013 2SA1015 2SA1035 2SA1016K
Contextual Info: - 20 - m n Ta=25t , *En(àTc=25t;) m 2SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1016K 2SA1018 2SA1020 2SA1022 2SA1025 2SA1029 2SA1030 2SA1031 2SA1032 2SA1034 2SA1035 2SA1036K 2SA1037K 2SA1037KLN 2SA1038 2SA1039 2SA1040 2SA1041 2SA1042 2SA1043 2SA1044

2SA1022

Abstract: XP06435 XP6435
Contextual Info: Composite Transistors XP06435 XP6435 Silicon PNP epitaxial planer transistor Unit: mm For high-frequency amplification 1 6 2 5 3 4 0 to 0.1 2SA1022 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.

2SA1022

Abstract: 2SC2295
Contextual Info: Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 0.95 (0.95) 1.9±0.1 (0.65) • High frequency voltage fT • Mini type package, allowing downsizing of the equipment and

2SA1022

Abstract: 2SC2295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06

2SA1022

Abstract: 2SC2295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06

2SA1022

Abstract: marking eb Silicon PNP epitaxial
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SA1022 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High transition frequency fT. 0.4 3 Features 1 insertion through the tape packing and the magazine packing. 0.55 Mini type package,allowing downsizing of the equipment and automatic

2SA1022

Abstract: 2SC2295
Contextual Info: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 ñ0.05 • Features ● 0.4±0.2 5° Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and

2SA1022

Abstract: 2SC2295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06

2SA1022

Abstract: 2SC2295
Contextual Info: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT.

2SA1022

Abstract: 2SC2295 transistor to6
Contextual Info: Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 1.9±0.2 1 0.95 +0.2 0.65±0.15 Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1

2SA1022

Abstract: 2SC2295
Contextual Info: Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 1.9±0.2 1 0.95 +0.2 0.65±0.15 Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage

2SA1022

Abstract: XP6435
Contextual Info: Composite Transistors XP6435 Silicon PNP epitaxial planer transistor Unit: mm For high-frequency amplification 1 6 2 5 3 4 0 to 0.1 2SA1022 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.

2SA973

Abstract: 2SC2263 2SC2295 2SA1022 t31i
Contextual Info: PANASONIC INDL/ELEKiSEMI> 7SC D | 1^32054 □ OG'Usq 7 f~ T Ji -f 7 2SC2263 2SC2263 NPN jc fcf £ '> tj U > $•'> 7 \/~f l — NP N Epitaxial Planar Low Noise Amplifier ' J / Complementary Pair with 2SA973 2SA973£:a >71) ^ /F e a tu re s it eP IC E E N V ¿ ^

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the