2SA1022
Abstract: XP06435 XP6435
Contextual Info: Composite Transistors XP06435 XP6435 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 5° ● 0.12+0.05 –0.02 1.25±0.10
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06435 (XP6435) Silicon PNP epitaxial planar type (0.425) 0.2±0.05 5 6 4 1 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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Contextual Info: Composite Transistors XP06435 XP6435 Silicon PNP epitaxial planar type (0.425) For high-frequency amplification 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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2SA1022
Abstract: XP06435 XP6435
Contextual Info: Composite Transistors XP06435 XP6435 Silicon PNP epitaxial planer transistor Unit: mm For high-frequency amplification 1 6 2 5 3 4 0 to 0.1 2SA1022 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06435 (XP6435) Silicon PNP epitaxial planar type (0.425) For high-frequency amplification 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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2SA1022
Abstract: XP06435 XP6435
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06435 (XP6435) Silicon PNP epitaxial planar type (0.425) For high-frequency amplification 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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2SA1022
Abstract: XP06435 XP6435
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06435 (XP6435) Silicon PNP epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2SA1022
Abstract: XP06435 XP6435
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06435 (XP6435) Silicon PNP epitaxial planar type (0.425) For high-frequency amplification 0.2±0.05 5 4 M Di ain sc te on na tin nc ue e/ d 6 Unit: mm 0.12+0.05 –0.02
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2SA1022
Abstract: XP6435
Contextual Info: Composite Transistors XP6435 Silicon PNP epitaxial planer transistor Unit: mm For high-frequency amplification 1 6 2 5 3 4 0 to 0.1 2SA1022 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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pamp13-n1mip2f3mip2f4mip382+7mip2e7dmymip2f2mip291mip414smip2e5dmymip411mip3e3smy equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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N2114
Abstract: marking som 6pin N2213 AE 3PIN ZD43
Contextual Info: S -5 b 7 § ^ 6 ÎS Ÿ / > i / z —V S Mini Type (6-pin) Package Outline * Transistors 0.425 mn m ID tO 1 O un CD 2 O L— Œ 3 S S ^ S ! ( 6 Ä i- ) A - y ^ - v li. S t# W S Í- M ( 3 ^ ) ¿ |5 li;/N " 7 X T 'h 7 > v 'X Í2 • f t ,1.25±0 1 • 4 ' ¿ " * f J& U / c K r f f i H ^
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n2114marking som 6pinn2213ae 3pin+1zd43
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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xp06501txp06531xp06545xp0a554+13xp0d873xp0d874xp0d8752sc59362sc6073panasonic transistor 2sc60732sc5929mn1280transistor 2sc60732sc5936 equivalent2sc6074transistor 2sc59292sc5928
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202
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