2SA1031 Search Results

2sa1032

Abstract: 2SA1031 Hitachi DSA002754
Contextual Info: 2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 LG and 2SC2310 Outline 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1031 2SA1032 Unit Collector to base voltage

2sa10

Abstract: 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1012 2SA1013 2SA1015 2SA1035 2SA1016K
Contextual Info: - 20 - m n Ta=25t , *En(àTc=25t;) m 2SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1016K 2SA1018 2SA1020 2SA1022 2SA1025 2SA1029 2SA1030 2SA1031 2SA1032 2SA1034 2SA1035 2SA1036K 2SA1037K 2SA1037KLN 2SA1038 2SA1039 2SA1040 2SA1041 2SA1042 2SA1043 2SA1044

2SA1032

Abstract: 2SA1031 2SC2310 2sC2310 y
Contextual Info: HITACHI 2SA1031, 2SA1032 SILICON PNP EPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER Complementary pair with 2SC458 LG and 2SC2310 riW « i Q.WUuJ § «.»My p 1, Emiiier . it * . ar 2. i Colica« J. B»ït (Dimensioni in mm) I èp h Vi 5i V I —J ji ? (JEDEC TO-92)

2SC458

Abstract: 2sc2310 Hitachi DSA002755 2SC458 B
Contextual Info: 2SC458 LG , 2SC2310 Silicon NPN Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SA1031 and 2SA1032 Outline 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage

2SC2310

Abstract: 2sc458 2SC458A 2SC458C 2SA1031 2SA1032 2SC458CLG C45S 2sc2310h "2SC458"
Contextual Info: HITACHI 2SC458 LG , 2SC2310 SILICON NPN EPITAXIAL LOW FREQUENCY LO W NOISE AMPLIFIER Com plem entary pair with 2SA1031 and 2SA1032 no 1. limitier 2. Collector 3. h .i*c Dimensions in mm I A B S O L U T E MAXIMUM R A T IN G S (Ta=25°C) Item Symbol M AXIM UM C O L L E C T O R D ISSIP A T IO N

2SA1032

Abstract: 2SA1031 Hitachi DSA0097 2SC2310 2SC458
Contextual Info: 2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 LG and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item

2SA1025

Abstract: 2SC23 2SC2547 2SA1031 2SA1082 2SC2396 2SC2543 2SC2544 2SC2545 2SC2546
Contextual Info: HITACHI 2SC2396, 2SC2543, 2SC2544 SILICON NPN EPITAXIAL LOW FREQ UEN CY AMPLIFIER Compltsmonlary pair with 2SA1025. 2SA1031 ar>rf 2SA1082 I. fcfliilttr IB. ^ , "T l~^ _ ! C« ic<w A - — =m Hi« V mi mmj (JE D E C TO-92) A BSO LUTE MAXIMUM RATINGS (Ta-25°C>

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

Hitachi 2SA

Abstract: Hitachi DSA002754
Contextual Info: 2SA1617 Silicon PNP Epitaxial Application High voltage amplifier Outline 2SA1617 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5

2SA1337

Abstract: 2SA1031
Contextual Info: HITACHI 2SA1337 SILICON PNP EPITAXÍAL LOW FREQUENCY LOW NOISE AMPLIFIER HF AMPLIFIER .0.UP.1 1. Em ill« 2. C o iltcto r 3. B»sc D ím c n s io fii in tn m (SPAK) I ABSOLUTE MAXIMUM RATINGS (Ta=25aC) Item MAXIMUM COLLECTOR DISSIPATION CURVE 2SA1337 Symbol

2SA1030

Abstract: 2SA1029 Hitachi DSA002754
Contextual Info: 2SA1029, 2SA1030 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 Outline 2SA1029, 2SA1030 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO –30

2sa161

Abstract: 2SA1617
Contextual Info: HITACHI 2SA1617 SILICON PNP EPITAXIAL HIGH VOLTAGE AMPLIFIER G'n h i 3. E m itte r 2 . Li-nc 1. Collector tPimciiSiixii in mni M PAK) ABSOLUTE MAXIMUM RATINGS (T a= 2 5 °C ) Item S ym bol C o llecto r to base voltage MAXIMUM COLLECTOR DISSIPATION CURVE

2SC137

Abstract: 2SC306 2SC138 2sc230 2SC458LG C 2SC130 2SC387AGTM 2SC238 2SC309 2SC132
Contextual Info: - 96 - m % T a = 2 5 ^ , * E P Í á T c = 2 5 eC M S 2SC27 € ffl & VcBO VcEO Ice DC) Pc Pc* (V) (V) (A) (W) (W) s± ii HF A 2SC130 S± ii HF A 60 1 1.8 2SC131 ܱ Ü HS SW 40 0.3 0. 35 2SC132 ä± ü HS SW 20 0.3 0.35 2SC134 S± ü HS SW 40 0.3 2SC135

2sa1046

Abstract: 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1001 -130 -4.5 -8A 80W(Tc=25ºC) 150 100 -5 -500 40* 350

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

Contextual Info: HITACHI 2 S A 1 0 5 2 SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER iS ìM S jO L 55. ja 2 ¡S 'V , L. EmiiKT 2. Ba*c 3. Collector DinxrnioTA in mm (MPAK) MAXIMUM COLLECTOR DISSIPATION CURVE I ABSOLUTE MAXIMUM RATINGS (Ta=25“C) Item 2SA1052 ! Symbol Unit

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

2SA1031

Abstract: 2SA1337 Hitachi DSA00396
Contextual Info: 2SA1337 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • HF amplefier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SA1337 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –55 V

2SA1015

Abstract: 2SA733 2SA847A 2SA968 2SA933 2SA823 2SA817 2sa777 2SA970 2SA935
Contextual Info: - m « Type No. 2SA 816 2SA 817 -• 2 SA 818 — 2SA 819 2SA 2SA 2SA 2SA 820 821 822 823 ^ 2SA 824 2SA 825 2SA 826 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 827 828 829 830 — 831 832 ^ 833 834 2SA 8 3 5 2SA 836-'' 2SA 837 2SA 838 2SA 839,*— 2SA 840 ^ 2SA 8412SA 842 2SA 843

2SA934

Abstract: 2sa933 2sa726 2sa999 2SA1005 2SA1115 2sb849 2SA999L 2SA715 2SB1314
Contextual Info: - 12 - s « Type No. tt S a 2 SA 7 1 2 2 SA 7 1 3 r0 < 2 SA 7 1 5 2 SA 7 1 7 B h •>- s 2S A 719 , , fé 2 SA 7 2 0 , fé 2S A 7 2 0 A ♦2 2 SA 7 2 1 _ fé 2S A 7 2 2 — fé 2 SA 7 2 3 2S A 7 2 4 2 SA 72 5 2S A 728 - 2 SA 7 2 8 2SA 730 y ' 2SA 731 2SA 732 ✓

2SA1350

Abstract: 2SA1031
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Hitachi DSA002754

Contextual Info: 2SA1350 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • HF amplefier Outline 2SA1350 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –40 V Collector to emitter voltage VCEO –30 V