2SC136 Search Results

2SC1367

Contextual Info: SavantIC Semiconductor Product Specification 2SC1367 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For TV horizontal deflection output applications PINNING see fig.2 PIN DESCRIPTION 1 Base 2 Emitter

npn 1000V

Abstract: NPN VCEo 1000V 2SC1367 2sc13
Contextual Info: Inchange Semiconductor Product Specification 2SC1367 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For TV horizontal deflection output applications PINNING see fig.2 PIN DESCRIPTION 1 Base 2

2SA738

Abstract: 2SC1368 500ma pnp 25 pin IC
Contextual Info: JMnic Product Specification 2SA738 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・High current ・Complement to type 2SC1368 APPLICATIONS ・Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION

2SA738

Abstract: 2SC1368
Contextual Info: SavantIC Semiconductor Product Specification 2SA738 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·High current ·Complement to type 2SC1368 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION

2SC1360

Abstract: 2SC1360A
Contextual Info: Transistors 2SC1360, 2SC1360A Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 5.9±0.2 4.9±0.2 8.6±0.2 • Features • High transition frequency fT • Large collector power dissipation PC 13.5±0.5 0.7+0.3

2SC1360

Abstract: 2SC1360A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1360, 2SC1360A Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 4.9±0.2 M Di ain sc te on na tin nc ue e/ d 5.9±0.2 8.6±0.2 • Features

2SC1360

Abstract: 2SC1360A
Contextual Info: Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit: mm 5.9±0.2 4.9±0.2 High transition frequency fT. Large collector power dissipation PC. Parameter 0.7±0.1 2SC1360 base voltage 2SC1360A

Contextual Info: 2SC1368 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)8.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

2SC1360

Abstract: 2SC1360A
Contextual Info: Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit: mm 5.9±0.2 4.9±0.2 High transition frequency fT. Large collector power dissipation PC. Parameter 0.7±0.1 2SC1360 base voltage 2SC1360A

Contextual Info: 2SC1367 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)600 V(BR)CBO (V)1.0k I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC1363

Contextual Info: 2SC1363 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)200n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC1368

Contextual Info: SavantIC Semiconductor Product Specification 2SC1368 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SC1360

Contextual Info: Transistors 2SC1360, 2SC1360A Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 5.9±0.2 4.9±0.2 8.6±0.2 • Features M Di ain sc te on na tin nc ue e/ d • High transition frequency fT • Large collector power dissipation PC

2SA738

Abstract: 2SC1368
Contextual Info: Inchange Semiconductor Product Specification 2SA738 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·High current ·Complement to type 2SC1368 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits PINNING PIN

2SC1364

Abstract: 2SC1634 2SA678 transistor 2sc1364 2SC1363 2SA677 2SC1633 2SC1364 transistor 690 lc 2SP1364
Contextual Info: SONY api 2SC1363.1364 Silicon NPN APM Transistor • SRJMW. 200mA, 320mW • Com plem entary to 2SC1363: 2 S A 6 7 7 2 SC1364: 2 S A 6 7 8 • F a m ily 2S C 16 3 3 , 2SC1634 A b solu ta M axim u m Ratings T , » 2 5 ° C Characteristics Collector-to-Base Voltage

2sc1424

Abstract: SC-5-1 2SC1457 2SC1507 2SC1324 2SC1336 2SC1345K 2SC1326 2SC1449 2SC1318A
Contextual Info: - 104 - m% * * Æ Î § Ta=25tC, ♦ EP(iTc=25‘C fi -t¡ m toi . *^fSU (V) 2SC1318A 2SC1324 2SC1326 2SC1336 2SC1342 2SC1343H 2SC1344 2SC1345 2SC1345K 2SC1359 2SC1360 2SC1360A 2SC1383 2SC1384 2SC1387 2SC1393 2SC1394 2SC1398 2SC1398A 2SC1413 2SC1413A 2SC1413AH

2sc984

Abstract: BLX91 trw rf BLX91A sk3264 B0150 ST8001
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 < 1 A, 2SC3617 2SC3617 2N3500 2.N3501 MM2259 MM2260 2SC3954 2SC2053 2SC3599C 2SC35990 ~~g~~~~~ 15 20 2SC3951 2SC3596C 2SC359G0 2SC3596E 2SC3596F LT1739 2SC1365 2SC1252 ~~g~~~~ 25 30 2SC1251 BLW89 BLW89

2SA738

Abstract: 2SC1368 transistor pnp Vcbo 25V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA738 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -25V (Min) ·Good Linearity of hFE ·Complement to Type 2SC1368 APPLICATIONS ·Designed for use as driver stages in high-fidelity amplifiers

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

BC546BP

Abstract: TBC546B 2SC708 bc190 bc190b 2SC2378 SE6020 2SC980AGTM 2SC708 C BC190A
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 2N3722 SE8012 JE9100A JE9100B JE9100C BCV71 BCV71 A BCV71 A BCV71 A 2SC3504D 5 10 15 20 25 30 35 40 45 50 60 70 85 90 (Hz) Ie Max (A) 500m 500m 100m 100m 100m 100m 0.2 0.2 0.2 50m J~9100[J N~(;~lecslnc

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable