2SC13 Search Results

2SC1309

Abstract: 2sc13
Contextual Info: Inchange Semiconductor Product Specification 2SC1309 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV vertical deflection output applications PINNING see fig.2 PIN DESCRIPTION 1 Base 2 Emitter

100w audio amplifier

Abstract: 2SC1343 2SA753
Contextual Info: AOK AOK Semiconductor Product Specification 2SA753 S ilicon PNP Power Transistors DESCRIPTION • With TO-3 package • Wide area of safe operation • Complement to type 2SC1343 APPLICATIONS • For 100W audio amplifier power output applications PINNING see Fig.2

2SC1325

Contextual Info: Inchange Semiconductor Product Specification 2SC1325 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING see fig.2 PIN DESCRIPTION 1

TO-92B

Abstract: 2SA0720 2SC1318
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1318 • Package  Complementary pair with 2SC1318 

2SC1358

Contextual Info: SavantIC Semiconductor Product Specification 2SC1358 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING See Fig.2

2SC1309

Contextual Info: SavantIC Semiconductor Product Specification 2SC1309 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed · APPLICATIONS ·For TV vertical deflection output applications PINNING see fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SC1367

Contextual Info: SavantIC Semiconductor Product Specification 2SC1367 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For TV horizontal deflection output applications PINNING see fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SA720A

Abstract: 2SA720A R 2SC1318A DSA003766 2SA720A transistor
Contextual Info: Transistor 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. • Absolute Maximum Ratings

2SC1324

Abstract: 470M
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC 1324 is a silicon NPN epitaxial planar type transistor designed D im e n s io n s in m m fo r industrial use RF broadband amplifiers from V H F to UHF band.

2SC144

Abstract: 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A
Contextual Info: - 126 - m € T y p e No. Manuf. SANYO 3í 2 T O SHIBA B NEC B HITACHI ti S i l F U J ITSU ta t MATSUSHITA m ' h MITSUBISHI □ - A ROHM 2SC 1898 Ü3 r B $ f 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1899 SrBÍS 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC1845

2SC1318

Abstract: 2SC1318R 2SC1318 transistor 2SC1318Q 2SA720 2SC1318-S 2SC1318-R 2SC1318 R
Contextual Info: 2SC1318 0.5 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   Low Collector to Emitter Saturation Voltage VCE sat Complementary Pair with 2SA720

2SC1383

Abstract: 2SA0683 2SA0684 2SC1384 2SC1383 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92MOD FEATURES z Low collector to emitter saturation voltage VCE(sat). z Complementary pair with 2SA0683 and 2SA0684. 1.EMITTER

IC LM 324

Abstract: 2sc1327 2SC1328 Lm 324 ic 2SC1328 U T 2SA721 2SA722 2SC1328 U
Contextual Info: 2 S C 1 3 2 7, 2 SC 1328 2SC1327, 2SC1328 NPN + T V — H S / S i NPN Epitaxial Planar ii'llffl./A F Low Noise Pre-Amplifier ^ /F e a tu re s • sS eTWEE NV „ / L o w noise voltage • hFE ; ^ ; * : ^ 0/H igh hFE • PN P S o 2SA721. 2SA722 II Absolute Maximum Ratings Ta=25°C

2SC1398

Abstract: 2SA748 2SC1398A
Contextual Info: Power Transistors 2SC1398, 2SC1398A 2SC1398, 2SC1398A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA748 Unit ! mm 10.5 ± 0 . 5 •ax , S : .9.8 max. trt oo_; 7.6min. ■ Feature • L arge collector pow er dissipation Pc

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURES z Low Collector to Emitter Saturation Voltage VCE(sat). z Complementary Pair with 2SA0683 and 2SA0684. 1.EMITTER 2.COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1318A TRANSISTOR（NPN） TO-92 FEATURES 1. EMITTER ∙ Collector output capacitance : 2. COLLECTOR 3. BASE Cob=11 pF TYP ,20 pF (MAX) 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC1359 TRANSISTOR NPN 1. EMITTER FEATURES z Optimum for RF Amplification of FM/AM Radios. z High Transition Frequency fT. 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA720

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0719, 2SA0720 (2SA719, 2SA720) Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1318A Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0720A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage (Base open) VCEO

2sc1384a

Abstract: 2SC1384 SJC00421AED 2SC1384 PANASONIC
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1384 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0684 • Features  Package  Low collector-emitter saturation voltage VCE(sat)

2SC1318

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 and 2SA0720 4.0±0.2 5.1±0.2 5.0±0.2

2SC1384

Abstract: 2SC1383 2sc1384 transistor 2SC1383 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURE Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. EMITTER 1 W (Tamb=25℃) 1 A 2. COLLECTOR

TO-237a

Abstract: 2sc1175 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY M A XIM UM RATINGS CASE Pd IC VCEO raW (A) (V) HFE min max V CE(sat) IT Cob C O M PLE IC V CE max min max MENTARY (mA) (V) (V) (A) (M Hz) (PF) TYPE 17+ 2SC1008 2SC1175 2SC1209 2SC1317 2SC1318 N N

2SC1358

Abstract: TRANSISTOR HORIZONTAL NPN Transistor VCEO 1000V 2SC1520 fbt tv NPN Transistor VCEO 30A 1000V C14A triple pulse transformer horizontal transistor
Contextual Info: '> y =3 > / \ ° 7 Silicon P o w e r Transistor 2SC1358 NPN = M ÎÉ iM H t S v U 3 > h 7 > v X ^ ^3 ^ “ i r U fcfTM FUjlÉJiii^ïÆ NPN Silicon Triple Diffused Transistor Horizontal Deflection Output for Color TV 0 2 0 -i y f - 90° # ^ — r ^ O u t l i n e U n i t ! mm