470M Search Results

P104W

Abstract: 2SC2104
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2104 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES: . Output Power : P0=3W Min. (f=470MHz, VCC=12.6V, P1=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VcC=15V, Pi=0.4W, f=470MHz

PO7C

Abstract: 2SC2380 2SC238
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2380 Unit in m m UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0 =12W Min. (f=470MHz, V C C=12.6V, Pi=3W) . 1 0 0 % T e s t e d f o r L o a d M i s m a t c h S t r e s s at A l l P h a s e A n g l e s w i t h 30:1 V S W R

2SC2379

Contextual Info: 2SC2379 SILICON NPN EPITAXIAL PLANAR TY P E Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=6W Min. (f=470MHz, VCC=12.6V, Pi=lW) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=12.5V, P0-6.5W, f=470MHz

CBMF1608T4R7M

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBMF1608T4R7M Features Item Summary 4.7 H(±20%), 145mA, 470mA, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions

APXC100ARA151

Abstract: APXC100ARA151MH70G C28M
Contextual Info: CONDUCTIVE POLYMER ALUMINUM SOLID CAPACITORS Surface Mount @Super low ESR, impedance and high heat resistance have been obtained by using conductive polymer as electrolyte. ESR and rated ripple current values are improved from PXA series. @Rated voltage range : 2.5 to 16Vdc, Capacitance range : 27 to 470MF

s8 223j

Abstract: s6 5n 822j MS75089 MS75089-23 MS75088-13 S75087
Contextual Info: OHMITE LITTLE HENRIES" Inductive Components K Series Manufacturing Company R. F. Molded Chokes 1 4 3 8 ! 188 -3 6 525-± 4 7 7- 156 - 0 1 0 - 3 . 9 6 2 a- 25 '0 K M 150M K M 220M K M 330M K M 470M KM 5 60 K 18130-1 18130-2 18130-3 18130-4 18130-5 KM 680K KM 820K

Contextual Info: 60 Insertion Loss dB 50 Surface Mount Low Pass Filters MSM Series Feed-through .007 (0.2±0.1) MSM Input MSM (Miniature) 30 20 151M 470M 1 4 Circuit Configuration 4 - Feed-Through Specifications Part Number 470M10 MSM4R151M10 MSM4R271M10 MSM4V102M10

KESTX01

Abstract: KESTX02
Contextual Info: KESTX01/KESTX02 At 900MHz Application Note AN4807 The KESTX01 and KESTX02 are designed for use in the 290-470MHz region, with a push-pull output stage designed to reduce second harmonic emissions when a suitable balanced output circuit is used. There is a

Surface Mount

Abstract: 474J 334J marking 101k
Contextual Info: API_newlayouts_single:APIcatalog_newlayouts 6/28/11 11:43 AM Page 26 F R ROVE D R* Unshielded Surface Mount Inductors L MI PP -100M -120M -150M -180M -220M -270M -330M -390M -470M -560M -680M -820M -01* -02* -03* -04* -05* -06* -07* -08* -09* -10* -11* -12*

MAX2664

Abstract: MAX2665
Contextual Info: 19-5476; Rev 0; 8/10 TION KIT EVALUA BLE IL AVA A VHF/UHF Low-Noise Amplifiers Features The MAX2664 and MAX2665 are ultra-compact LNAs for VHF/UHF applications. These devices incorporate a broadband LNA with an integrated bypass switch. The MAX2664 covers the UHF frequency range from 470MHz

Contextual Info: POWER INDUCTORS - SURFACE MOUNT SMT1803LF PART NUMBER SMT1803-470MLF SMT1803-680MLF SMT1803-101MLF SMT1803-151MLF SMT1803-221MLF SMT1803-331MLF SMT1803-471MLF SMT1803-681MLF SMT1803-821MLF SMT1803-102MLF SMT1803-152MLF SMT1803-222MLF SMT1803-332MLF SMT1803-472MLF

RA60H4047M1

Abstract: RA60H4047M1-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

RA30H4047M

Abstract: RA30H4047M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

gzl50

Abstract: RA07N4047M RA07N4047M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4047 RA07N4047M 07N4047M RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to

Contextual Info: GEC P LES S EY w , O c t o b e r 1994 ADVANCE INFORMATION S E M I C O N D U C T O R S D S 4 0 0 3 - 1.4 SL6610 DIRECT CONVERSION FSK DATA RECEIVER This device is an advanced direct conversion receiver for operation up to 470MHz. The design is based on the SL6609A

1A47

Abstract: tlc 250
Contextual Info: www.fastrongroup.com TLC/1A Ne w A ØD ØD1 E F Ød Toroid Line Chokes Part No 73 Inductance fL = 1 kHz Tol At Idc=0A At rated current ± (%) TLC/1A-100M-00 TLC/1A-150M-00 TLC/1A-220M-00 TLC/1A-330M-00 TLC/1A-470M-00 TLC/1A-680M-00 TLC/1A-101M-00 TLC/1A-151M-00

Contextual Info: TOSHIBA {DISCRETE/OPTOJ 9097250 T O SH IB A Sb DE I ^ O T T a S Q Q 0 Q 7 4 C14 b <D I S C R E T E / O P T O SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=25W Min.) (f=470MHz, V CC=12.6V, Pi=10W)

Contextual Info: T O SH IB A 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 ^ f ? fi J 7 UHF BAND POWER AMPLIFIER APPLICATIONS • U nit in mm O utput Power : Po = 12W Min. (f= 470MHz, V c c = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL

Contextual Info: B U R R -B R O W N > B B I Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • STABLE IN GAINS: > 2V/V The OPA651 is a low power, wideband voltage feed­ back operational amplifier. It features a bandwidth of 470MHz as well as a 12-bit settling time of only 16ns.

VLS4012

Abstract: VLS4012T VLS4012T-3R3M1R2 VLS4012T-100MR82 VLS4012T-150MR65 VLS4012T-1R0N1R9 VLS4012T-1R5N1R5 VLS4012T-220MR57 VLS4012T-2R2M1R4 VLS4012T-4R7M1R1
Contextual Info: VLS4012 Type Technical Data VLS4012 Type VLS4012T-1R0N1R9 VLS4012T-1R5N1R5 VLS4012T-2R2M1R4 VLS4012T-3R3M1R2 VLS4012T-4R7M1R1 VLS4012T-6R8MR80 VLS4012T-100MR82 VLS4012T-150MR65 VLS4012T-220MR57 VLS4012T-330MR44 VLS4012T-470MR39 CONTENTS L-Q Frequency Characteristics

Cool White Diffused Leds

Abstract: Dialight VSL-CC-15B-35-813
Contextual Info: FEATURES / BENEFITS Vehicle Strip Lighting p Low power consumption 18.5 inch 470mm 12 inch (305mm) 6 inch (153mm) p Wide angle uniform beam p Long life p Robust design p Suitable for both indoor and outdoor applications p Shatterproof diffused lens p Shock and vibration resistant

EMZE250ADA101MF90G

Abstract: 470MF 63v 330 MF CAPACITOR EMZE250ADA470MF73G EMZE6R3ADA101MF73G EMZE160ADA221MF90G EMZE350ADA470MF90G EMZE500ADA101MJA0G EMZE500ADA470MHA0G 470MF 10v
Contextual Info: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS @Endurance : 7,000 to 8,000 hours at 105C @Low impedance @Rated voltage range : 6.3 to 50V @Nominal capacitance range : 10 to 470MF @Suitable for high reliability products @Solvent resistant type see PRECAUTIONS AND GUIDELINES

BS3550

Abstract: SAW resonator 433MHz 433MHz saw Based Transmitter Schematic 433 .92MHz RF PCB Receiver murata saw filter philips 433mhz receiver SIEMENS saw filter 2103d kesrx
Contextual Info: KESRX05 260 to 470MHz ASK Receiver with Power Down Preliminary Information DS5023 Issue 1.9 August 1999 Features Ordering Information ● ● ● ● ● ● ● In-band Interference Rejection 20dB max. 2103dBm Sensitivity IF BW = 470kHz AGC around LNA and Mixer

3SK232

Abstract: 3SK249 GI 242
Contextual Info: - 242 - 'M f- Ç fflM O S F E T l ^ te § r?; •*« #3 S K 2 3 0 BS ® É :V H F /C A T V í a U « ts T5 S f ê iS 3.30 Vds=6 V, Ì d=10hiA. 1MHz,* 4 7’U<0T7'' 0.03 Vds=6 V. ID=10mA, 1MHz, * - / iS R Ä L - e 19.50 22.50 Vds=6 V, 1D=10mA. 470MHz* i] y t- ii 7