2SA0683 Search Results

2SC1383

Abstract: 2SA0683 2SA0684 2SC1384 2SC1383 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92MOD FEATURES z Low collector to emitter saturation voltage VCE(sat). z Complementary pair with 2SA0683 and 2SA0684. 1.EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURES z Low Collector to Emitter Saturation Voltage VCE(sat). z Complementary Pair with 2SA0683 and 2SA0684. 1.EMITTER 2.COLLECTOR

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 • Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Allowing supply with the radial taping 4.9±0.2

2sc1384

Abstract: 2sc1383 transistor 2sc1384 NPN transistor 2sc1384 85170
Contextual Info: 2SC1383/2SC1384 TO-92MOD Transistor NPN 1.EMITTER TO-92MOD 2.COLLECTOR 1 2 3 5.800 6.200 3.BASE 8.400 8.800 Features — — 0.900 1.100 0.400 0.600 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0683 and 2SA0684. 13.800 14.200

2SA683

Abstract: 2SC1384 ic 2sc1384 2SA0683 2SA0684 2SA684 2SC1383 2SC1383 2SC1384 PANASONIC TRANSISTOR 2sa684
Contextual Info: Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planar type Unit: mm 5.9±0.2 4.9±0.2 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SA0683 2SA683 , 2SA0684 (2SA684) 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • Low collector to emitter saturation voltage VCE(sat)

2SC1384

Abstract: 2SC1383 2SC1384 PANASONIC
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1383, 2SC1384 Silicon NPN epitaxial planar type Unit: mm 5.9±0.2 • Features 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684

2SC1384

Abstract: 2SC1383 2SA0683 2SA0684
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURES z Low collector to emitter saturation voltage VCE(sat). z Complementary pair with 2SA0683 and 2SA0684. 1.EMITTER 2.COLLECTOR

transistor 2sa684

Abstract: ic 2sc1384 2SA0683 2SA0684 2SA683 2SA684 2SC1383 2SC1384 NPN transistor 2sc1383 E1808
Contextual Info: Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA0683 2SA683 and 2SA0684 (2SA684) Unit: mm 5.9±0.2 4.9±0.2 Low collector to emitter saturation voltage VCE(sat).

2SC1384

Abstract: 2SA684 2SA0683 2SA0684 2SA683 2SC1383
Contextual Info: Transistor 2SA0683, 2SA0684 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 Unit: mm 5.9±0.2 4.9±0.2 Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 • Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Allowing supply with the radial taping 4.9±0.2

2SA683

Abstract: 2SA0683 2SA0684 2SA684 2SC1383 2SC1384
Contextual Info: Transistors 2SA0683 2SA683 , 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 • Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Allowing supply with the radial taping 4.9±0.2 8.6±0.2 For low-frequency power amplification and driver amplification

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92MOD FEATURES z Low Collector to Emitter Saturation Voltage VCE(sat). z Complementary Pair with 2SA0683 and 2SA0684. 1.EMITTER

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 4.9±0.2 M Di ain sc te on na tin nc ue e/ d 8.6±0.2 For low-frequency power amplification and driver amplification

2SA0683

Abstract: 2SC1383 2SC1384 2SC1384C 2SC1383 2SC1384 PANASONIC
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1383 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0683 • Package  Low collector-emitter saturation voltage VCE(sat)

ft 103

Abstract: Vbe 8 V ic 2sc1384 2SA0683 2SA0684 2SC1383 2SC1384
Contextual Info: Transistors 2SC1383, 2SC1384 Silicon NPN epitaxial planar type Unit: mm 5.9±0.2 M Di ain sc te on na tin nc ue e/ d • Features 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684 4.9±0.2 13.5±0.5 0.7+0.3

2SA0683

Abstract: 2SA0684 2SA683 2SA684 2SC1383 2SC1384
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 4.9±0.2 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Allowing supply with the radial taping • Absolute Maximum Ratings Ta = 25°C

2sc1384

Abstract: transistor 2sc1384 NPN transistor 2sc1383 2SC1383 transistor 2sc1383 transistor 7800 TO-92L to92l 85170 2SA0683
Contextual Info: 2SC1383/2SC1384 TO-92L Transistor NPN TO-92L 1.EMITTER 4.700 5.100 2.COLLECTOR 7.800 8.200 3.BASE 1 Features — — 2 3 0.600 0.800 0.350 0.550 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0683 and 2SA0684. 13.800 14.200

2SA0683

Abstract: 2SC1384 2SA0684 2SA683 2SA684 2SC1383 2SA684 S
Contextual Info: Transistor 2SA0683, 2SA0684 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 Unit: mm 5.9±0.2 4.9±0.2 Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1383 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0683 • Package M Di ain sc te on na tin nc ue e/ d  Features

2SA06

Abstract: 2SA60 Silicon PNP epitaxial planar type For low-frequency 2SA0683 2SA0684 2SA683 2SA684 2SC1383 2SC1384
Contextual Info: Transistors 2SA0683, 2SA0684 2SA683, 2SA684 Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 • Features 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SC1383, 2SC1384 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Complementary pair with 2SC1383 and 2SC1384

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)