2SA2004 Search Results

Contextual Info: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE

2SA2004

Contextual Info: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage

Contextual Info: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 15.0±0.5 • Features ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage Emitter open

2SA2004

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA200

Abstract: 2SA2004
Contextual Info: Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 4.6±0.2 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage

2SA2004

Contextual Info: Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit: mm For power amplification 9.9±0.3 3.0±0.5 2.9±0.2 13.7±0.2 4.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −60

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and