2SC2258 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C

2SA1698

Abstract: 2SC2258
Contextual Info: Power Transistors 2SA1698 2SA1698 Silicon PNP Epitaxial Planar Type General Amplifier Complementary Pair with 2SC2258 • Feature • High c o lle c to r -e m itte r v o lta g e V ceo ■Absolute Maximum Ratings (Ta=25°C) Symbol Value Unit V cbo -3 0 0

2SC2258

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C

2SC2258

Contextual Info: Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open

2SC2258

Contextual Info: JMnic Product Specification 2SC2258 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High transition frequency fT ・High collector-emitter voltage VCEO APPLICATIONS ・For high breakdown voltage general amplification ・For video output amplification

2SC225

Abstract: 2SC2258A
Contextual Info: Inchange Semiconductor Product Specification 2SC2258A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High transition frequency fT ・High collector-emitter voltage VCEO APPLICATIONS ・High voltage general amplifier ・TV video output amplifier

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C

2SC2258A

Contextual Info: SavantIC Semiconductor Product Specification 2SC2258A Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High transition frequency fT ·High collector-emitter voltage VCEO APPLICATIONS ·High voltage general amplifier ·TV video output amplifier

2SC2720

Abstract: 2SC2720-A 2SD772 nec 2SC3S31 2SC3098 2SC3358 2SC3531 2SC1730 nec 2sd772 2SC3110
Contextual Info: - M £ tt € Manuf. Type No. 2SC 3786 / H 2SC 3 7 8 7 / " = 2SC 3788 = ft ft 2SC 3 7 8 9 ^ = 2SC 3790 = B * SANYO TOSHIBA 'S NEC B tL HITACHI ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — b. ROHM 2MJ1Z7Ö 2SD1692 $ * 173 2SC1953 2SC3620 2SC2682 2SC2258

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C

2SC2258

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C

2SA1698

Abstract: 2sc2258 complementary 2SC2258
Contextual Info: Power Transistors 2SA1698 2SA1698 Silicon PNP Epitaxial Planar Type General Amplifier Complementary Pair with 2SC2258 • Feature Package Dimensions • High c o lle c to r-e m itte r v o ltag e V Ce o ■Absolute Maximum Ratings (Ta=25°C) Item Symbol

Contextual Info: Power Transistors 2SC2258 Silicon NPN triple diffusion planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage VCBO 250 V Collector to emitter voltage VCEO 250 V

2SC2258

Contextual Info: Power Transistors 2SC2258 Silicon NPN triple diffusion planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage VCBO 250 V Collector to emitter voltage VCEO 250 V

2SC2258

Contextual Info: SavantIC Semiconductor Product Specification 2SC2258 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High transition frequency fT ·High collector-emitter voltage VCEO APPLICATIONS ·For high breakdown voltage general amplification ·For video output amplification

2SC2258

Contextual Info: Inchange Semiconductor Product Specification 2SC2258 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High transition frequency fT ・High collector-emitter voltage VCEO APPLICATIONS ・For high breakdown voltage general amplification

Contextual Info: Power T ransistors 2£C225B if • Hil 2SC2258 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage General Amplifier TV Video Output Amplifier Unir.: i 2±0.2 8.0 :sî ■ Features • High collector-em itter voltage * V ceo

2SC2259

Abstract: 2SC2283-MA 2sc2238 2SC2246 2SC2283 2sc2233 2sc2284 2SC2273 2SC2272 2SC2237
Contextual Info: - 118 - Ta=25eC. *ÉPÍáTc=25T5 m & 2SC2228Y 2SC2229 2SC223Ö 2SC2230A 2SC2233 2SC2235 2SC2236 2SC2237 2SC2238 2SC2238A 2SC2238B 2SC2240 2SC2242 2SC2243 2SC2244 2SC2245 2SC2246 2SC2247 2SC2250 2SC2258 2SC2259 2SC2271 2SC2272 2SC2273 2SC2274 2SC2274K 2SC2275

c2258

Abstract: 2SC2258 panasonic tv 25 ink High frequency transistors panasonic 2SC C225B
Contextual Info: Power T ransistors 2ÊC225B if . 1UJ 2SC2258 Silicon PNP Triple-Diffused Planar Type High Breakdown Voltage General Amplifier TV Video Output Amplifier Package Dimensions . ’ Unir.: mm 8.0-Si • Features • High co llecto r-em itter v oltage V ceo

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC1260

Abstract: 2SC1815 2sc1424 2SC944 2SC930 2SC2094 2SC1681 2SC2021 2sc2990 2SC1345
Contextual Info: - « m * 2SC 15 2 8 2SC 1529 € tt T y p e No. M Manuf. SANYO H £ = £ S TOSHIBA 2SC2102 B H NEC ¿ HITACHI « ± FUJITSU Ü fò 2SC299Ö 2SC2888 □ T MATSUSHITA MITSUBISHI — 117 A ROHM 2SC2034 2SC1260 * 2SC 1537 □- A 2SC930 * 2SC 15 3 8 □- A 2SC930

2SC2491

Abstract: 2SC319B 2SC748 2sc2550 2SC306 2SC1740 2sc2061 2SC2926 2SC1398 2SC1687
Contextual Info: 84 - S S! tt T y p e No. 2SC 292 « Manuf. = $ SANYO Ü S TOSHIBA t b B NEC ÍL HITACHI Ä ± iï FUJITSU fâ T MATSUSHITA 'J—— 2SC2497 2SC 293 ' J —— 2SC2497A 2SC 294 S S 2 SC2497A 2SC 295 a a S * h m MITSUBISHI □ — A ROHM 2 SC2497A 2SC 296 |_±iS