2SD1276 Search Results

2SB950A

Abstract: 2SB950 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SB950, 2SB950À Package Dimensions 2 SB9 5 0 , 2 SB9 5 0 A U nit * mm Silicon PNP Epitaxial Planar Darlington Type 4 4max. 10.2tnax, 5.7ma*. 2.9max. Power Amplifier, Switching Complementary Pair with 2SD1276, 2SD1276A •Features • High DC current gain

2SD1276

Abstract: G01BB 2SB950 2SB950A 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A 2SD1276, 2SD1276A Package Dim ensions Unit mm j 4.4max. I S ilico n N P N Triple-D iffused P la n a r Darlington Type b-+\ 2.9md\ Power A m plifier C om plem entary Pair with 2SB950, 2SB950A • Features 0 3 1 1 0 .1 •

2SD1267

Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290

2SB0950

Abstract: 2SB0950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 2.7±0.2 Rating Unit VCBO 60 V 2SD1276A 2.54±0.3 VCEO Emitter-base voltage Collector open VEBO 5 V IC 4 A Peak collector current TC = 25°C

C-123

Abstract: 2SB950 2SB950A 2SD127 2SD1276 2SD1276A IPL 3000
Contextual Info: Power Transistors 2SD1276, 2SD1276A 2S D 1 27 6, 2S D 1276A P a c k a g e D im e n s io n s Silicon NPN Triple-D iffused Planar D arlington Type P o w e r A m p lifier C o m p le m e n ta ry P a ir with 2 S B 9 5 0 , 2 S B 9 5 0 A • F e a tu re s • H ig h D C c u r r e n t g a in h pc

2SD1276

Abstract: 2SD1276A 2SB950 2SB950A
Contextual Info: Product Specification www.jmnic.com 2SD1276 2SD1276A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB950 and 2SB950A ・High forward current transfer ratio hFE ・High-speed switching APPLICATIONS ・For power amplification

2SB0950

Abstract: 2SB0950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SB0950 and 2SB0950A 16.7±0.3 4.2±0.2 • High forward current transfer ratio hFE • High-speed switching

Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SB0950 and 2SB0950A 16.7±0.3 4.2±0.2 φ 3.1±0.1 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE

2SB0950

Abstract: 2SB0950A 2SB950 2SB950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type Darlington Unit: mm • Absolute Maximum Ratings Parameter Symbol Collector to 2SD1276 base voltage 2SD1276A Collector to 2SD1276 emitter voltage 2SD1276A Ratings Unit 60 VCBO V 80

2SB0950

Abstract: 2SB0950A 2SB950 2SB950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SB0950 2SB950 , 2SB0950A (2SB950A) Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification and switching Complementary to 2SD1276 and 2SD1276A 16.7±0.3 4.2±0.2 φ 3.1±0.1 M Di ain sc te on na

2SD650

Abstract: 2SC4711 MG30G1BL3 2SD670 hitachi 2SD731 2SD670 2SD837B 2SD678 2sd699 2SD683
Contextual Info: - 22 0 - tt M € Type No. « Manuf. SANYO 2SD 677 K 2 TOSHIBA m NEC HITACHI ll * ± a FUJITSU tö T MATSUSHITA MITSUBISHI □ — A ROHM 2SD2132 2SC2139 2SD 678A fö T 2SC3144 2SD635 2SD560 2SD1275A 2SD1932 2SD 679A tö T 2SD1190 2SD634 2SD560 2SD1276A 2SD1932

2SD1276A

Abstract: 2SD1276
Contextual Info: Inchange Semiconductor Product Specification 2SD1276 2SD1276A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB950/950A ・High DC current gain ・High-speed switching APPLICATIONS ・For power amplification PINNING

2SD1276

Abstract: 2SB950A 2SD1276A 2SB950
Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type Darlington Unit: mm • Absolute Maximum Ratings Parameter Symbol Collector to 2SD1276 base voltage 2SD1276A Collector to 2SD1276 emitter voltage 2SD1276A Ratings 60 VCBO V 80 VEBO

Contextual Info: Power Transistors 2SB0950 2SB950 , 2SB0950A (2SB950A) Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification and switching Complementary to 2SD1276 and 2SD1276A 16.7±0.3 4.2±0.2 φ 3.1±0.1 Collector-base voltage

transistor 2sb950a

Abstract: 2SB950A 2SD1276A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 2000 Min. @IC= -3A ·High Speed Switching ·Complement to Type 2SD1276A APPLICATIONS ·Designed for power amplifier and switching applications.

2SD1276

Abstract: 2SD1276A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1276 2SD1276A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SB950/950A ·High DC current gain ·High-speed switching APPLICATIONS ·For power amplification PINNING PIN

darlington power pack

Abstract: ft 103 DARLINGTON Vbe 8 V 2SB0950 2SB0950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SB0950 and 2SB0950A 4.2±0.2 2.7±0.2 16.7±0.3 φ 3.1±0.1 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

2SC1565

Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
Contextual Info: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589

4336

Abstract: 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847 2SC3142
Contextual Info: m « tt T y p e No. 2SC 4324 2SC 4325 2SC 4326 H € ✓ & SANYO Manuf. x s x s 2SC4871 □ —A 2SC3142 S TOSHIBA m. b NEC B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A 2SC2735 2SC2847 2SD1412 2SD1444 2SC 4328 S a 2SC3258 2SC3869 2SC 4329

te 1819

Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =