G01BB Search Results

2SC3844

Abstract: 374171 reo4
Contextual Info: FUJ I TS U M I C R O E L E C T R O N I C S 31E D a 374R7b5 G01bb2b b S F M I T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2S C 3844 4 5 0 V , 15A A B S O L U T E M A X IM U M R A T IN G S Parameter Storage Tem perature Range

2SC3842

Abstract: 2SC3843 2SC3844 2SC3845 2SC3846 2SC3847 2SC3947
Contextual Info: FUJITSU MICROELECTRONICS 31E D a 374R7b5 G01bb2b b SFMI T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2SC3844 450V, 15A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Tem perature Range Junctio n Tem perature

DAC73K

Abstract: DAC736K DAC736 AC736 DAC73 DAC73/736
Contextual Info: BURR-BROÙJN CORP 22E D • 17313bS c E 3 E 3 3 ■ T-S/-Q?’/é DAC73 DAC736 BURR-BROW N Ì G D lbb b ? B High Resolution 16-BIT DIGITAL-TO-ANALOG CON VERTER FEATURES • 16-BIT RESOLUTION • ±1/2LSB MAXIMUM NONLINEARITY •LO W DRIFT • CURRENT OR VOLTAGE OUTPUT

Contextual Info: Preliminary Data Sheet July 1995 m A T& T Microelectronics DSP1605 Digital Signal Processor 1 Features 2 Description • For 5 V operation: — 25 ns instruction cycle time 40 MIPS — 30 ns instruction cycle time (33 MIPS) ■ For 3.3 V operation: — 31.25 ns instruction cycle time (32 MIPS)

Contextual Info: ADVANCE 128K • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access times: 4 .5 ,5 ,6 ,7 ,8 and 9ns Fast OE# access time: 4.5,5 and 6ns Single +3.3V +10%/-5% power supply SNOOZE MODE for reduced power standby Common data inputs and data outputs

Contextual Info: SONY CXD2586R/-1 CD Digital Signal Processor with Built-in Digital Servo and DAC Description The CXD2586R/-1 is a digital signal processor LSI for CD players. This LSI incorporates the digital servo, digital filter and 1-bit DAC. Features • All digital signal processing during playback is

2SC3844

Abstract: 2SC3842 2SC3843 2SC3845 2SC3846 2SC3847 2SC3947 2SC3948
Contextual Info: FU JI TSU MICROELECTRONICS 31E D 37MT7b2 ÜQlbbilb 1 IF M I T Ja n u a ry 1990 Edition 1.1 — . FUJITSU P R O D U C T P R O F ILE - — - 2 2SC3948 Silicon High Speed Power Transistor 2SC3948 500V, 10A A B S O L U T E MAXIMUM R A TIN G S Parameter

Contextual Info: Power Transistors 2SD1254 2SD1254 Silicon NPN Epitaxial Planar Type • Package Dimensions Power Switching Complementary Pair with 2SB931 ■ Features • Low collector-em itter saturation voltage • Good linearity of DC current gain V ce isa o (I i f e )

Contextual Info: SONY CXG1030N Power Amplifier for PHS Description The C X G 10 30N is a power amplifier for PHS. This IC is designed using the Son y’s G aA s J-FET process and operates at a single power supply. Features • Output power 21 dBm • Positive power supply

Contextual Info: * ? • u FEATURES DESCRIPTION • Single or Dual Supply Operation • ±2.5V to ±20V Input Supply Range • ±5% Initial Oscillator Accuracy; ± 10% Over Temperature The UC1637 is a pulse width modulator circuit intended to be used for a variety of PWM motor drive and amplifier applications requiring either uni-directional or bi­

rsm ah 16

Abstract: DS1315 20-PIN DS1215 DS131S
Contextual Info: DS1315 PRELIMINARY P A L L A R D S 1 3 1 5 SEMICONDUCTOR Phantom Time Chip FEATURES PIN ASSIG NM ENT • Real time clock keeps trackof hundredths of seconds, seconds, minutes, hours, days, date of the month, months, and years X1 c 1 16 □ Veci X2 c 2 15 □

2SC3843

Abstract: 2SC3846 2SC3842 5011s 2SC3844 2SC3845 2SC3847 2SC3947 2SC3948 2SC3949
Contextual Info: FU JI TS U M I C R O E L E C T R O N I C S 31E D E3 374=57b2 Q O l b b B M S Q F f l I T~23 cP January 1990 Edition 1.1 FUJITSU P R O D U C T P R O F IL E - 2SC3846 Silicon High Speed Power Transistor 2SC3846 800V, 6A A B S O L U T E MAXIMUM R A T IN G S Parameter

2SC3948

Contextual Info: MICROELECTRONICS 31E D 37MT7b2 ÜQl b bi l b IF M I T - 2 3 - I3 January 1990 Edition 1.1 — 1 . FUJITSU PRODUCT PROFILE - — 2SC3948 Silicon High Speed Power Transistor 2SC3948 500V, 10A A BSO LU T E M A X IM U M R A T IN G S P aram eter Sym bol S to ra ge T e m p e ra tu re R a nge

1AA6

Contextual Info: ADVANCE 128KX 16/18 SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access times: 4 .5 ,5 ,6 ,7 ,8 and 9ns Fast OE# access time: 4.5,5 and 6ns

cwI 1011

Abstract: LH5164AHN-80L 16A8H
Contextual Info: SHARP LH5 16A8H Contents 1. Description 2. Pin Configuration 2 . 2 3. Truth Table 3 4. Block Diagram 3 5. Absolute Maximum Ratings 4 6. Recommended DC Operating Conditions 4 7. DC Electrical Characteristics 4 8. AC Electrical Characteristics

Contextual Info: FT NPN Silicon AF Transistors 35E D • 6 5 3 b 3 5 Q O O lb b S H T - i * ? '1 9 ' BC 846 b M S I P _ - B C 850 SIEMENS/ SPCL-, SEMICONDS • • • • • For AF input stages and driver applications High current gain Low coilector-emitter saturation voltage

Contextual Info: SAMSUNG ELECTRONICS INC b?E » • 7 % 4 1 H E D01bb52 SSI KM428C256, KM428V256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION ■ Dual port Architecture 256K x 8 bits RAM port 512x8 bits SAM port • Performance range : The Samsung KM428C/V256 is a CMOS 256K x 8 bit Dual

Contextual Info: HI T A C H I / LOGIC/ARRAVS/riEM a*JE J> 4*Hba03 0Qlt.b57 1 HM65256B Series 32768-word X 8-bit High Speed Pseudo Static RAM • FEATURES • • HM65256BP Series Single 5V ±10% High Speed Access Time CE Access T i m e . 100/120/150/200ns

Contextual Info: 3SE D • äS3b320 QQlbbBl 3 « S I P PNP Silicon AF Transistors f - 4 1 - 17 SIEMENS/ SPCLi SEMICONDS • • • • • B a a a BC 856 -BC860 For AF input stages and driver applications High current gain Low collector-em itter saturation voltage Low noise between 30 Hz and 15 kHz

Contextual Info: 32E D • Ô23b320 ISIP Q Q lb b 7 4 BCV 29 BCV 49 NPN Silicon Darlington Transistors S IE M E N S / • • • • SPCL-, SEM IC O N BS For genera! A F applications High collector current High current gain Complementary types: B C V 28, B C V 48 PNP Type

Contextual Info: DS1012 DS1012 2-in-1 Sub-Miniature Silicon Delay Line with Logic DALLAS SEMICONDUCTOR FEATURES PIN ASSIGNMENT • All-silicon time delay IN1 C 1 8 : Vcc OU TaC OUT1 £ 2 7 : IN2 • Surface mount 8-pin mini-SOIC and standard 8-pin DIP 3 6 GNDC 4 5 • 2 independent buffered delays per input

SEP8526

Abstract: sep8526-002 diode honeywell
Contextual Info: b7E » • 4SS1Û30 001bb7S MOT « H O N l HONEYWELL INC/ MICRO SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106

Contextual Info: ZILOG INC 30E D E3 ^ 0 4 0 4 3 DOlbtlB T m i l l ProductSpecification - ~T~^-9 -/ 7'ÔJ Z86C3Û CM OS Z8 8-BIT M icrocontroller_ _ FEATURES • 8-bit CMOS microcontroller, 28-pin DIP ■ Two programmable 8-bit Counter/Timers ■ Low cost ■ 6-bit programmable prescaler on each Counter/Timer