SDP8106 Search Results

Infrared Phototransistor

Abstract: infrared diode Infrared Emitting Diode SDP8106 SDP8406 SEP8506
Contextual Info: 17 September 1997 SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series

SDP8106

Abstract: SEP8506 SEP8706
Contextual Info: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-79.TIF DESCRIPTION The SDP8106 is an NPN silicon photodarlington

SDP8106

Abstract: SEP8506 SEP8706 Photodarlington
Contextual Info: 17 September 1997 SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-79.TIF DESCRIPTION The SDP8106 is an NPN silicon photodarlington molded

Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

SEP8506

Abstract: SDP8000 SDP8406 SDP8106
Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

Contextual Info: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106

Contextual Info: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package . 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SDP8106 is an NPN silicon photodarlington

SEP8706-003

Abstract: SEP8706 SEP8706-001 SDP8106 SEP8706-002
Contextual Info: SEP8706 AlGaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106

Contextual Info: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8106 is an NPN silicon photodarlington

SEP8506-002

Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt

R840

Abstract: NFRA-20-TIF
Contextual Info: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106

SDP8106

Abstract: SDP8406 SEP8706
Contextual Info: SEP8706 AlGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106

photodarlington

Abstract: SDP8106 SDP8106-001 SEP8506 SEP8706
Contextual Info: Datasheet - SDP8106-001 SDP8106-001 Representative photograph, actual product appearance may vary. SDP Series Silicon PhotoDarlington, Side-looking Plastic Package Features ● ● Due to regional agency approval requirements, some products may not be available in your area.

Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

Contextual Info: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength » Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106

Contextual Info: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

Contextual Info: SDP8106 Silicon Photodarlington FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506/8526 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8106 is an NPN silicon photodarlington molded

sep8526-002

Contextual Info: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

HOA-1882-12

Abstract: HOA1874-12 HOA1873-12 HOA1879-15 HOA1879-11 HOA1873-13 HOA1872-13 D 400 transistor HOA1882-12 transistor
Contextual Info: HONEYWELL INC/ MICRO MIE D M SSlfiBD G 013ñ7 b 3 • M O N I K A - Z ? Assemblies Transmissive With Plastic Encapsulated Components The assemblies on this page are based on SEP8506IRED, the SDP8406 phototran­ sistor and the SDP8106 photodarlington. ORDER AND SPECIFICATION GUIDE

SEP8526

Abstract: sep8526-002 diode honeywell
Contextual Info: b7E » • 4SS1Û30 001bb7S MOT « H O N l HONEYWELL INC/ MICRO SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106

transistor

Abstract: HOA1873-13 HOA1884-12 HOA1882-12 HOA1874-12 HOA-1882-12 HOA1872-12 HOA1878-13 HOA1872-13 HOA1882-11
Contextual Info: HONEYWELL INC/ MICRO Assemblies 41E J> 4551030 0013fl7b 3 •H0N1 Transmissive With Plastic Encapsulated Components The assemblies on this page are based on SEP8506 IRED, the SDP8406 phototran­ sistor and the SDP8106 photodarlington. ORDER AND SPECIFICATION GUIDE

HOA1883

Abstract: SDP8106 SDP8406 SEP8506
Contextual Info: HOA1883 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Wide lead spacing • 0.060 in. 1.52 mm dia. detector aperture • 0.140 in.(3.56 mm) slot width INFRA-41.TIF OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals

HOA1885

Abstract: SDP8106 SDP8406
Contextual Info: HOA1885 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • High profile package for raised optical centerline • Ambient light and dust protective filter • 0.200 in. 5.08 mm slot width INFRA-69.TIF DESCRIPTION The HOA1885 series consists of an infrared emitting

metal detector schematic

Abstract: METAL DETECTOR circuit for make metal detector sensor Metal Detector all datasheet phototransistor pulse metal detector HOA1874 hydrocarbon sensor metal detector circuit HOA1874-001
Contextual Info: 17 September 1997 HOA1874 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Three sensitivity ranges • Choice of metal can package or plastic molded components • 0.120 in. 3.05 mm slot width INFRA-15.TIF DESCRIPTION