SEP8705-003
Abstract: SDP8105 SEP8705 SEP8705-001 SEP8705-002 
 
Contextual Info: SEP8705 AlGaAs Infrared Emitting Diode INFRA-55.TIF FEATURES • T-1 package • 15°  nominal  beam angle • 880 nm wavelength • Consistent optical properties • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to
 
 | 
 
Original
 | 
SEP8705 
INFRA-55
SDP8405/8425
SDP8105 
SEP8705
INFRA130
SEP8705-003
SDP8105
SEP8705-001
SEP8705-002
 | 
PDF
 | 
SDP8436
Abstract: SEP8736 SEP8736-001 SEP8736-002 SEP8736-003 
 
Contextual Info: SEP8736 AlGaAs Infrared Emitting Diode INFRA-80.TIF FEATURES • Side-emitting plastic package • 10°  nominal  beam angle • 880 nm wavelength • Enhanced coupling distance • Mechanically and spectrally matched to SDP8436 phototransistor OUTLINE DIMENSIONS in inches (mm)
 
 | 
 
Original
 | 
SEP8736 
INFRA-80
SDP8436 
INFRA-70
SEP8736
INFRA-97
INFRA130
SDP8436
SEP8736-001
SEP8736-002
SEP8736-003
 | 
PDF
 | 
SEP8706-003
Abstract: SEP8706 SEP8706-001 SDP8106 SEP8706-002 
 
Contextual Info: SEP8706 AlGaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50°  nominal  beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106
 
 | 
 
Original
 | 
SEP8706 
INFRA-20
SDP8406/8426
SDP8106 
SDP8000/8600
INFRA-71
SEP8706
INFRA130
SEP8706-003
SEP8706-001
SDP8106
SEP8706-002
 | 
PDF
 | 
SEP8506-001
Abstract: SEP8506-002 SEP8506-003 SDP8106 SEP8506 infra red diode 
 
Contextual Info: SEP8506 GaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50°  nominal  beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt
 
 | 
 
Original
 | 
SEP8506 
INFRA-20
SDP8406/8426
SDP8106 
SDP8000/8600
INFRA-71
SEP8506
INFRA130
SEP8506-001
SEP8506-002
SEP8506-003
SDP8106
infra red diode
 | 
PDF
 | 
infra red diode
Abstract: SEP8505-003 SEP8505-001 SDP8105 SEP8505 SEP8505-002 infra red light emitting diode 
 
Contextual Info: SEP8505 GaAs Infrared Emitting Diode INFRA-55.TIF FEATURES • T-1 package • 15°  nominal  beam angle • 935 nm wavelength • Consistent on-axis optical properties • Mechanically and spectrally matched to SDP8405/8425 phototransistor and SDP8105 photodarlington
 
 | 
 
Original
 | 
SEP8505 
INFRA-55
SDP8405/8425
SDP8105 
SEP8505
INFRA130
infra red diode
SEP8505-003
SEP8505-001
SDP8105
SEP8505-002
infra red light emitting diode
 | 
PDF
 |