SEP8705 Search Results

simple phototransistor

Abstract: all datasheet phototransistor phototransistor 600 nm Infrared Phototransistor led and phototransistor simple circuit SDP8405 SEP8505 SEP8705
Contextual Info: 17 September 1997 SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20¡ nominal acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes

SEP8705-003

Abstract: SEP8705 diode t T1 Package infrared emitting diode
Contextual Info: Datasheet - SEP8705-003 SEP8705-003 SEP Series AlGaAs Infrared Emitting Diode, T-1 Package Features Representative photograph, actual product appearance may vary. ● ● ● ● ● Due to regional agency approval requirements, some products may not be available in your area.

SEP8705-003

Abstract: SDP8105 SEP8705 SEP8705-001 SEP8705-002
Contextual Info: SEP8705 AlGaAs Infrared Emitting Diode INFRA-55.TIF FEATURES • T-1 package • 15° nominal beam angle • 880 nm wavelength • Consistent optical properties • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to

Contextual Info: SDP8475-201 Low Light Rejection Phototransistor FEATURES • T-1 plastic package • Low light level immunity • 20° nominal acceptance angle • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes DESCRIPTION The SDP8475 is an NPN silicon phototransistor with

Contextual Info: SDP8405 Silicon Phototransistor FEATURES . T-1 plastic package • 20° nominal acceptance angle . Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes DESCRIPTION

SEP8705

Abstract: SDP8105 SEP8505
Contextual Info: SDP8105 Silicon Photodarlington FEATURES • T-1 plastic package • 20¡ nominal acceptance angle • Consistent optical properties • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes INFRA-55.TIF DESCRIPTION The SDP8105 is an NPN silicon photodarlington

SEP8705

Abstract: SDP8105 SEP8505
Contextual Info: 17 September 1997 SDP8105 Silicon Photodarlington FEATURES • T-1 plastic package • 20¡ nominal acceptance angle • Consistent optical properties • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes INFRA-55.TIF DESCRIPTION

simple phototransistor

Abstract: SDP8405 SEP8505 SEP8705
Contextual Info: SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20¡ nominal acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes INFRA-22.TIF

SEP8505

Abstract: SDP8475-201 high sensitivity reflective phototransistor phototransistor 600 nm phototransistor datasheet simple phototransistor SEP8505-002 SEP8705 phototransistor application circuit
Contextual Info: SDP8475-201 Low Light Rejection Phototransistor FEATURES • T-1 plastic package • Low light level immunity • 20¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes INFRA-22.TIF DESCRIPTION

Contextual Info: PHOTONIC DETECTORS INC. High-Power GaAIAs Infrared Emitters Peak Wavelength 880 nm, Type PDI-E808-A PACKAGE DIMENSIONS inch mm BLUE CLEAR PLASTIC Ø0.118 [3.00] INDUSTRY EQUIVALENTS SFH487&SEP8705 0.177 [4.50] 0.126 [3.20] 0.98 [25.0] 0.020 [0.51] SQ 0.059 [1.5]

Contextual Info: SEP8705 AIGaAs Infrared Emitting Diode FEATURES • T-1 package • 15° nominal beam angle • 880 nm wavelength • Consistent optical properties • Higher output than GaAs at equivalent drive current . Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105

Contextual Info: SDP8425 Silicon Phototransistor FEATURES • T-1 plastic package • 20° nominal acceptance angle • Consistent optical properties • Mechanically and spectrally matched to SEP8505/8525 and SEP8705 infrared emitting diodes si < DESCRIPTION The SDP8425 is an NPN silicon phototransistor transfer

SEP8705

Contextual Info: SEP8705 AIGaAs Infrared Emitting Diode FEATURES • T-1 package • 15° nominal beam angle • 880 nm wavelength • Consistent optical properties • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to

Contextual Info: SDP8105 Silicon Photodarlington FEATURES • T-1 plastic package • 20° nominal acceptance angle • Consistent optical properties • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes DESCRIPTION The SDP8105 is an NPN silicon photodarlington

Contextual Info: SDP8475-201 Low Light Rejection Phototransistor FEATURES • T-1 plastic package • Low light level immunity • 20° nominal acceptance angle • Mechanically and spectrally matched to SEP8505 and SEP8705 Infrared emitting diodes INFRA-22.TIF DESCRIPTION

npn phototransistor

Abstract: phototransistor application circuit simple phototransistor phototransistor npn SDP8475-201 all datasheet phototransistor phototransistor Infrared Phototransistor NPN Silicon Phototransistor t-1 phototransistor
Contextual Info: 17 September 1997 SDP8475-201 Low Light Rejection Phototransistor FEATURES • T-1 plastic package • Low light level immunity • 20¡ nominal acceptance angle • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes INFRA-22.TIF

SEP8705

Abstract: simple phototransistor SDP8105 SDP8405
Contextual Info: 17 September 1997 SEP8705 AlGaAs Infrared Emitting Diode FEATURES • T-1 package • 15¡ nominal beam angle • 880 nm wavelength • Consistent optical properties • Higher output than GaAs at equivalent drive current • Mechanically and spectrally matched to

Contextual Info: SEP8705 AIGaAs Infrared Emitting Diode FEATURES • T-1 package . 15° nominal beam angle • 880 nm wavelength • Consistent optical properties • Higher output than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105

Contextual Info: SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20° nominal acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes DESCRIPTION

Contextual Info: SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20° nominal acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505/8525 and SEP8705 infrared emitting diodes

SDP8425

Contextual Info: SDP8425 Silicon Phototransistor FEATURES • T-1 plastic package • 20° nominal acceptance: • Consistent optical prope • Mechanically and spectrally matched to SEP8505/8525 and SEP8705 infrared emitting diodes DESCRIPTION The SDP8425 is an NPN silicon phototransistor transfer

Contextual Info: SDP8105 Silicon Photodarlington FEATURES . T-1 plastic package • 20° nominal acceptance angle • Consistent optical properties • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes DESCRIPTION The SDP8105 is an NPN silicon photodarlington

angle phase control

Abstract: infrared emitters and detectors SEP8705 SFH487
Contextual Info: PHOTONIC DETECTORS INC. High-Power GaAIAs Infrared Emitters Peak Wavelength, 880 nm,Type PDI-E808 PACKAGE DIMENSIONS inch mm BLUE CLEAR PLASTIC Ø0.118 [3.00] INDUSTRY EQUIVALENTS SFH487 & SEP8705 0.177 [4.50] 0.126 [3.20] 0.98 [25.0] 0.020 [0.51] SQ C L

SDP8105

Abstract: SDP8405 SEP8705
Contextual Info: SEP8705 AlGaAs Infrared Emitting Diode FEATURES • T-1 package • 15¡ nominal beam angle • 880 nm wavelength • Consistent optical properties • Higher output than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105