SDP8405 Search Results

simple phototransistor

Abstract: all datasheet phototransistor phototransistor 600 nm Infrared Phototransistor led and phototransistor simple circuit SDP8405 SEP8505 SEP8705
Contextual Info: 17 September 1997 SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20¡ nominal acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes

Contextual Info: SEP8525 GaAs Infrared Emitting Diode FEATURES . T-1 package . 15 ' nominal beam angle • 935 nm wavelength • Consistent on-axis optical properties . Mechanically and spectrally matched to SDP8405/B425 phototransistor and SDP8105 photodarlington DESCRIPTION

Contextual Info: SDP8405 Silicon Phototransistor FEATURES . T-1 plastic package • 20° nominal acceptance angle . Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes DESCRIPTION

SEP8505

Abstract: infrared diode simple phototransistor Infrared Emitting Diode SDP8405 SDP8105
Contextual Info: 17 September 1997 SEP8505 GaAs Infrared Emitting Diode FEATURES • T-1 package • 15¡ nominal beam angle • 935 nm wavelength • Consistent on-axis optical properties • Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington

simple phototransistor

Abstract: SDP8405 SEP8505 SEP8705
Contextual Info: SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20¡ nominal acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes INFRA-22.TIF

Contextual Info: SEP8705 AIGaAs Infrared Emitting Diode FEATURES • T-1 package • 15° nominal beam angle • 880 nm wavelength • Consistent optical properties • Higher output than GaAs at equivalent drive current . Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105

n11a

Abstract: SDP8405 SEP8505 SEP8705 t-1 ir phototransistor
Contextual Info: SDP8405 Silicon Phototransistor FEATURES • T-1 pJaslic package ' 2 0 r nominal acceptance a n ^ e » Consistenl optical properties ' W id e sensitivity ranges ■ Mechanically and spectrally matched to S E P 8 5 0 5 and S E P S 705 n Ira red emitting d o d e i

Contextual Info: SEP8505 GaAs Infrared Emitting Diode FEATURES • T-1 package • 15° nominal beam angle • 935 nm wavelength • Consistent on-axis optical properties • Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington DESCRIPTION

SDP8405

Abstract: SDP8405-001 SDP8405-002 SDP8405-003 SDP8405-011 SDP8405-012 SDP8405-013 SEP8705
Contextual Info: SDP8405 Silicon Phototransistor INFRA-22.TIF FEATURES • T-1 plastic package • 20° nominal acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505/8525 and SEP8705 infrared emitting diodes

SDP8105

Abstract: SDP8405 SEP8505
Contextual Info: SEP8505 GaAs Infrared Emitting Diode FEATURES • T-1 package • 15¡ nominal beam angle • 935 nm wavelength • Consistent on-axis optical properties • Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington INFRA-55.TIF

Contextual Info: SEP8705 AIGaAs Infrared Emitting Diode FEATURES • T-1 package . 15° nominal beam angle • 880 nm wavelength • Consistent optical properties • Higher output than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105

Contextual Info: SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20° nominal acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes DESCRIPTION

Contextual Info: SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20° nominal acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505/8525 and SEP8705 infrared emitting diodes

SDP8105

Abstract: SDP8405 SEP8705
Contextual Info: SEP8705 AlGaAs Infrared Emitting Diode FEATURES • T-1 package • 15¡ nominal beam angle • 880 nm wavelength • Consistent optical properties • Higher output than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105

SV70M

Abstract: SDP8406-003
Contextual Info: SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20° nominal acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505/8525 and SEP8705 infrared emitting diodes

infra red diode

Abstract: SEP8505-003 SEP8505-001 SDP8105 SEP8505 SEP8505-002 infra red light emitting diode
Contextual Info: SEP8505 GaAs Infrared Emitting Diode INFRA-55.TIF FEATURES • T-1 package • 15° nominal beam angle • 935 nm wavelength • Consistent on-axis optical properties • Mechanically and spectrally matched to SDP8405/8425 phototransistor and SDP8105 photodarlington

Contextual Info: HOA0149 Reflective Sensor WFHA-59.HF DESCRIPTION The HOA0149 consists of an infrared emitting diode and an NPN silicon phototransistor encased side-byside on converging optical axes in a black thermoplastic housing. The phototransistor responds to radiation from the IRED only when a reflective object

Reflective Optical Sensor focused

Abstract: phototransistor side view Reflective Optical Sensor Reflective Optical Sensor with Transistor Output HOA0149 SDP8405 SEP8505 40C101
Contextual Info: 17 September 1997 HOA0149 Reflective Sensor FEATURES • Phototransistor output • Focused for maximum response • Low profile housing INFRA-59.TIF DESCRIPTION The HOA0149 consists of an infrared emitting diode and an NPN silicon phototransistor encased side-byside on converging optical axes in a black thermoplastic

SEP8705-003

Abstract: SEP8705 diode t T1 Package infrared emitting diode
Contextual Info: Datasheet - SEP8705-003 SEP8705-003 SEP Series AlGaAs Infrared Emitting Diode, T-1 Package Features Representative photograph, actual product appearance may vary. ● ● ● ● ● Due to regional agency approval requirements, some products may not be available in your area.

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

hoa1405-001

Abstract: Reflective Optical Sensor focused HOA1405-002 HOA1405 SDP8405 SEP8505 optoelectrics temperature sensor PIC
Contextual Info: HOA1405 Reflective Sensor featu res . . . Phototransistor output Focused for maximum response Ambient light rejection filter DESCRIPTION OUTLINE DIMENSIONS in inches mm The HOA1405 series consists of an infrared emitting diode and an NPN silicon phototransistor encased

HOA149-1

Abstract: HOA708-1 HOA709-1 HOA708 HOA1405-1 HOA1405-2 HOA708-11 HOA709-11 HOA149 BUT 11 Transistor
Contextual Info: HONEYWELL INC/ MICRO Assemblies 11E D m 4SS1S3D 0013884 B • HON1 7 ^ > - d / Reflective With Plastic Encapsulated Components Honeywell has a complete line of reflective assemblies built with plastic-encapsulated components. HLC1395 is a component that functions like an assembly. HOA149,

diameter glass lens phototransistor

Contextual Info: SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° ' nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents

SEP8705-003

Abstract: SDP8105 SEP8705 SEP8705-001 SEP8705-002
Contextual Info: SEP8705 AlGaAs Infrared Emitting Diode INFRA-55.TIF FEATURES • T-1 package • 15° nominal beam angle • 880 nm wavelength • Consistent optical properties • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to