P8706
Abstract: SEP8526
Contextual Info: SDP8426 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506/8526 and SE P8706 infrared emitting diodes DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SDP8426 is an N PN silicon phototransistor molded
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SDP8426
Abstract: DG10C
Contextual Info: SDP8426 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506/8526 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8426 is an NPN silicon phototransistor molded
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sdp8426sep8506/8526sep8706dg10c+1sep8526
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TIL149
Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Contextual Info: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55
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gq133cla60c-101-ccla60aa+16c-101-bcla60abc-101-acla65c-102cla65aatil149hoa708-1s-180-a55spx2862hs-230-40whoa708slotted optical switchhoa1160h0a2001a11w
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Contextual Info: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
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sep8526sdp8406/8426sdp8106sdp8000/8600+1sdp8426
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sep8526-002
Contextual Info: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
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sep8526sdp8406/8426sdp8106sdp8000/8600+2sdp8426sep8526-002
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TRANSISTOR K 135
Abstract: SDP8405-14 transistor pt 42 transistor SDP8405-13 TRANSISTOR GUIDE transistor 650 SDP8426-2
Contextual Info: HONEYUlELL I N C / MICRO MIE D • 4551Ö30 QOlBfibT b Plastic Encapsulated Sensors Saturation voltage values are measured at approximately 25% of the minimum specified light current for each device; typical values are 0.3 V for phototransistors, and 1.0 V for photodarlingtons.
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sdp8405-1sdp8405-2sdp8405-3sdp8405-11+12sdp8405-12sdp8405-13sdp8405-14sdp8425-1sdp8425-2sdp8106-1transistor k 135transistor pt 42transistortransistor guidetransistor 650sdp8426-2
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SEP8526
Abstract: sep8526-002 diode honeywell
Contextual Info: b7E » • 4SS1Û30 001bb7S MOT « H O N l HONEYWELL INC/ MICRO SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106
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001bb7ssep8526sdp8406/8426sdp8106+5sdp8000/86000dlbb77sdp8426sep8526-002diode honeywell
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