2SC3844 Search Results

2SC3844

Abstract: 374171 reo4
Contextual Info: FUJ I TS U M I C R O E L E C T R O N I C S 31E D a 374R7b5 G01bb2b b S F M I T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2S C 3844 4 5 0 V , 15A A B S O L U T E M A X IM U M R A T IN G S Parameter Storage Tem perature Range

2SC3842

Abstract: 2SC3843 2SC3844 2SC3845 2SC3846 2SC3847 2SC3947
Contextual Info: FUJITSU MICROELECTRONICS 31E D a 374R7b5 G01bb2b b SFMI T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2SC3844 450V, 15A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Tem perature Range Junctio n Tem perature

Contextual Info: 2SC3844 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)450ö V(BR)CBO (V)600 I(C) Max. (A)15 Absolute Max. Power Diss. (W)75 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3819

Abstract: 2SC3852A 2SC3818 PA2012 2SA1488 251C 2SC3815 2SC3817 2SC3820 2SC3821
Contextual Info: - 174 - Ta=25^C, *EPÍáTc=25eC m 2SC3815 % ít S B m m & 900MHz PA Vc b o Vc e o (V) (V) m Ic(DC) Pc Pc* (A) (W) (W) 20 12 1.5 I c bo (max) (/¿A) 17.5 V’cB % (min) M tÉ (max) (V) 250 15 (Ta=25cO ) [*En(itypfiI] hF E 20 200 VCE (V) Ic/lE (A) (V) 7 0.2

c5411

Abstract: c5411 transistor S2000N equivalent 2SC5570 equivalent S2055N equivalent 2SD1555 equivalent c5411 equivalent S2055AF equivalent 2SD2539 equivalent 2SD2499 equivalent
Contextual Info: Horizontal-Deflection Output Transistors PRODUCT GUIDE Outline Toshiba has developed a range of fifth-generation horizontal-deflection-output transistors HV-Trs . Radical redesign of the emitter electrode and the contact pattern has yielded significant improvements, resulting in higher current density

2SC3844

Abstract: 2SC3847 2SC3842 2SC3843 2SC3845 2SC3846 2SC3947 2sc3948
Contextual Info: FUJITSU MICROELECTRONICS 31 E 3?m?b2 D OGlbbSñ F MI 2 r - 3 3 ~ 13 January 1990 Edition 1.1 Fujitsu PRODUCT P R O FILE : 2SC3847 Silicon High Speed Power Transistor 2SC3847 800V, 10A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage Temperature Range T*tg

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

2SC3843

Abstract: 2SC3845 2SC3842 2SC3844 2SC3846 2SC3847 2SC3947
Contextual Info: FU JI TS U M I C R O E L E C T R O N I C S 374=17ta 0 ü l b b 3 0 ö O I F M I 31E D T - 3 i'l3 January 1990 Edition 1.1 FUJITSU P R O D U C T PR O FILE - 2SC3845 Silicon High Speed Power Transistor 2SC3845 800V, 3A A BSO LU T E M A X IM U M R A T IN G S

2SC3847

Abstract: 2SC3842 2SC3843 2SC3844 2SC3845 2SC3846 2SC3947
Contextual Info: FUJITSU MICROELECTRONICS 31E D B 3 7 4 c]7t.5 D 0 1 b b 4 S 4 Q FMI r January 1990 Edition 1.1 - — - 3 3 FUJITSU PRODUCT PROFILE 2SC3947 Silicon High Speed Power Transistor 2SC3947 50 0 V , 5A A B S O L U T E M A X IM U M R A T IN G S Parameter Sym bo l

2SC3845

Abstract: 2SC3842 2SC3847 2SC3844 6011s 2SC3843 2SC3846 fujitsu tg h
Contextual Info: 31E J> FUJITSU MICROELECTRONICS O 374^7^2 D01bb52 QFMI cP January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE- 2SC3843 Silicon High Speed Power Transistor 2SC3843 450V, 10A A BSO LU T E M A X IM U M R A T IN G S Parameter Sym b ol C onditions Rating U nit -5 5 ~ +150

2SC3842

Abstract: 2SC3847 2SC3948 2SC3843 2SC3844 2SC3845 2SC3846 2SC3947 2SC3949
Contextual Info: FU JI TSU M I C R O E L E C T R O N I C S 31E D C2 3 7 4 ci?t,B O O l b b S O 3 E I F M I r - 3 January 1990 Edition 1.1 FUJITSU PRODUCT P R O FILE- 2S C 3949 Silicon High Speed Power Transistor 2SC3949 500V , 15A ABSOLUTE M A X IM U M RATIN GS Parameter Sym bol