900MHZ Search Results

S-AU25

Abstract: SAU25
Contextual Info: i TOSHIBA RF POWER AMPLIFIER MODULE - S-AU25 900MHz UHF POWER AMPLIFIER MODULE EUROPE CELLULAR RADIO FEATURES : Unit in mm . Built-in Driver Stage 2-R2.1±a2 . Output Power (6W) is Directly Gained by VCO(lmW). %

F 711

Abstract: TOSHIBA RF Power Module
Contextual Info: RF POWER AMPLIFIER MODULE S-AU9 900MHz UHF POWER AMPLIFIER MODULE Unit in mm MCA FEATURES : 2-R2.1±CL2 . Output Power : P0 SS14W . Minimum Gain : Gp=18.4dB . Efficiency : M a 7^' S3 5% û5±ai5 . 50 0 Input/Output Impedance Uâ^ . Guaranteed Stability 25.4

Contextual Info: RF2870 RoHS Compliant & Pb-Free Product CDMA LOW NOISE AMPLIFIER/MIXER 900MHz DOWNCONVERTER Typical Applications • CDMA Cellular Systems • General Purpose Downconverter • JCDMA Cellular Systems • Commercial and Consumer Systems • AMPS Cellular Systems

Contextual Info: RF2314 GENERAL PURPOSE LOW NOISE AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOT 5-Lead Features       150MHz to 2500MHz Operation 2.7V to 6.0V Single Supply +18dBm Output IP3 at 5V 14dB Gain at 900MHz 8.6dB Gain at 900MHz

R-PDSO-G5 board layout

Abstract: OPA2658 OPA658 OPA658U OPA658UB
Contextual Info: OPA658 OPA 658 OPA 658 SBOS045A – MARCH 1994 – REVISED JUNE 2003 Wideband, Low-Power, Current-Feedback Operational Amplifier FEATURES DESCRIPTION ● UNITY-GAIN STABLE BANDWIDTH: 900MHz ● LOW POWER: 50mW ● LOW DIFFERENTIAL GAIN/PHASE ERRORS: 0.025%/0.02°

07027

Abstract: 1.0037
Contextual Info: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • ¿r = 8GHz F =1.3dB at 900MHz Package BFP193W SOT-343 RCs Q62702-F1577 1= E 2=C 3=E CÛ !l ESP: Electrostatic discharge sensitive device, observe handling precaution!

telemetry block diagram

Abstract: HFA3600 HFA3600IB IS-54 schematic diagram UPS active power 600 LNA for WIRELESS APPLICATIONS FROM 100 MHz - 800Mhz HA3600 S11L
Contextual Info: HFA3600 NO RE U CT NT PROD E T E CEME L OBSO DED REPLA Data Sheet EN COMM August 2002 FN3655.5 Low-Noise Amplifier/Mixer Features The HFA3600 is a silicon Low-Noise Amplifier with high performance characteristics allowing the design of very sensitive, wide dynamic-range 900MHz receivers with

Contextual Info: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFR 280W NPN S ilicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • *r = 7.5GHz F= 1.5dEJ at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: RFCR2310 RFCR2310 900MHz to 930MHz Single Junction Drop-In Circulator 900MHz TO 930MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 1in x 1in Features  Typical Insertion Loss Less than 0.2dB  -70dBc IMD Typical  Isolation Greater than 23dB

FPM21500QFN

Abstract: 33PF FPM21500 roger 4350
Contextual Info: EB21500QFN-AB FPM21500QFN 0.9GHz LNA EVALUATION BOARD FEATURES Measured @ 900MHz • 23 dBm Output Power • 18.3 dB Small Signal Gain • 0.45 dB Noise Figure • 34 dBm OIP3 measured @ Pout = 8dBm per tone ● Bias 3V, 70mA DESCRIPTION AND APPLICATIONS

9421

Abstract: FPD2250SOT89
Contextual Info: EB2250SOT89BB FPD2250SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured at 900MHz 28dBm Output Power 17dB Gain 39dBm OIP3 @ 18dBm Pout Total Power Noise Figure 1.2dB Bias 5V, 300mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

S-AU30

Contextual Info: TOSHIBA RF POWER AMPLIFIER MODULE S-AU30 Unit in mm 900MHz UHF POWER AMPLIFIER MODULE USA CELLULAR RADIO 4.8JZS + Q 3 . Output Power : P o ^ 6 W . Minimum Gain : Gp=17.7dB . Efficiency : 7 t ÌS30% . 50 il Input/Output Impedance + Û2 5-a5-Ql . Guaranteed Stability

ELF 850 C

Abstract: rf power amplifier 850 MHZ RF2104 ELF 850 B
Contextual Info: RF2104 MICRO‘DEVICES MEDIUM POWER AMPLIFIER Typ ical A p plicatio ns • 900MHz ISM Band Applications • Portable Battery Powered Equipment • 400MHz Industrial Radios • Commercial and Consumer Systems • Driver for Higher Power Applications • Base Station Equipment

STB7101

Abstract: GP 113
Contextual Info: STB7101 0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER • OPERATING FREQUENCY 900-900MHz • OUTPUT POWER 9.8dBm typ. @ 900MHz 7.5dBm typ. @ 900MHz • POWER GAIN GP = 20.3dB typ. @ 900MHz GP = 20.5dB typ. @ 900MHz SOT323-6L SC70 ORDER CODE STB7101 BRANDING

Contextual Info: AC4790-1X1 900MHz Radio Module Innovative Technology for a Connected World THE FASTEST WAY TO WIRELESS Laird Technologies’ tiny AC4790-1x1 radio modules put the power of a pre-configured peer-to-peer protocol into the smallest, most cost-sensitive wireless applications. Despite

FA01215

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FA01215 GaAs FET HYBRID IC DESCRIPTION FA01215 is RF Hybrid IC designed for 900MHz band 14.7 small size handheld radio. 14.2 0.6 2 3.5 Unit:mm 2 3.5 2 FEATURES • Low voltage 3.0V • High gain 24dB typ. • High efficiency

900MHZ

Abstract: IPC-SM-782 RF6100-1 RF6100-1PCBA-41X capacitor 100 micro F
Contextual Info: RF6100-1 3V 900MHZ LINEAR POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V CDMA/AMPS Cellular Handset • Spread-Spectrum System • 3V CDMA20001/X Cellular Handset Product Description Optimum Technology Matching Applied

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAsMMIC> 00M077 37, • MGF7108A UHF BAND GaAs POWER AMPLIFIER IC DESCRIPTION OUTLINE DRAWING MGF7108A is a GaAs monolithic microwave integrated circuits for Unit:millimeters use in 900MHz band power amplifiers. @ Va c FEATURES NU

SR8800LPQ1357BY

Abstract: LINE FILTER FOR 900MHZ MAX2620 MAX2620EUA MAX2620EVKIT SMV1204-34 ceramic coaxial resonators
Contextual Info: MAX2620 Evaluation Kit _Component List DESIGNATION QTY DESCRIPTION _Features ♦ Complete, Tunable VCO Test Board with Tank Circuit ♦ Tuning in 900MHz Frequency Range ♦ Low Phase Noise -110dBc/Hz typical at 25kHz

74014

Abstract: ic ta 7699 ic 7905 790081 74948 13128 top mark LC sc70-6 38117 ic 7809 datasheet MAX2642EXT-T
Contextual Info: 19-1682; Rev 0; 4/00 UAL IT MAN TION K A ET U E L H A S EV TA WS DA FOLLO 900MHz SiGe, High IP3, Low-Noise Amplifiers Features ♦ Wide Frequency Range: 800MHz to 1000MHz ♦ High Output IP3 and Adjustable +17dBm at 5.3mA +7dBm at 2.8mA ♦ Low Noise Figure: 1.3dB at 900MHz

LTC 1993

Abstract: ETC1-1-13 LT1993-4 LT1993CUD-4 LT1993IUD-4 LTC2255
Contextual Info: LT1993-4 900MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 4V/V DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1993-4 is a low distortion, low noise Differential Amplifier/ADC driver for use in applications from DC to

MGCM02

Abstract: MGCT04 90dB AGC Amplifier VHF oscillator 900mhz Diplexer
Contextual Info: MGCT04 Transmit Circuit for TDMA/AMPS and CDMA/AMPS Preliminary Information Features • • • • • • DS5424 Dual RF Ports for 900MHz and 900MHz AGC Amplifier with 90dB of Variable Gain, Fully Compensated for Temperature On-chip Active Filter Removes the

135nH

Contextual Info: 1. Dimensions: I— 0.071 2. Schematic: Max - H oÛ.044 Max \ Orange dot o- 3. Electrical Specs: 0.015 0.040 Max OCL 72nH±5% OCL 82nH Typ 900MHz, 0.1V OCL 135nH Typ 1,7GHz, 0.1V 150MHz, 0.1V □ C Res.: 0 .4 9 0 Ohms Max DC Current: 400m Adc p - 0.034 - |