2N3375 Search Results

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

2N4041

Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

SRK-2001

Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

2n3375

Abstract: 2n3375 transistor 2N3553
Contextual Info: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. 2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes

2N4041

Abstract: 2N3375 ZTX327 2N3553 2n4427 Transistor 2N3866 RF 2N3866 2N3866 BLW17 BLW39
Contextual Info: RF POWER TRANSISTORS R.F. Performance Minimum Maximum Rating Package Type V ceio Vceo 55 30 Volts ZTX327 Vcc Volts Po u t Watts Pg dB f 12.0 10.0 L 6 .0 0.35 0.6 0.2 6.4 11.0 10.0 Volts •I fo MHz 400 1 175 175 J y E-line 2N3375 65 40 28.0 3.0 4.7 400 TO-60

2N3632

Abstract: 2N3375 2N3373
Contextual Info: , LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3375 2N3632/2N3733 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND 130 TO 400MHz FREQUENCY 28V VOLTAGE 2.5TO13.5W POWER OUT HIGH POWER GAIN

2N3375

Abstract: Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690
Contextual Info: 2N3375 SILICON NPN VHF POWER TRANSISTOR Distributed Wafer Interdigital Construction Integrated Diffused Em itter Ballast mechanical data All d im e n s io n s a re in m m TO-60 * absolute maximum ratings at 25 ° C case temperature unless otherwise noted

2N3375

Abstract: Transistor 2n3375
Contextual Info: 2N3375 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3375 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHF-UHF Region. PACKAGE STYLE TO- 60 ISOLATED FEATURES INCLUDE: • Isolated Package MAXIMUM RATINGS IC

Contextual Info: m 2N3375 \ \ NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3375 is Designed for Class A,B>C Amplifier,Oscillator and Driver Applications Covering the VHFUHF Region. PACKAGE STYLE TO- 60 ISQLATED FEATURES INCLUDE: MINIMUM In c h e s / m • Isolated Package

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

Contextual Info: Micmsemi 2N3375 2 N3632/2N3733 n i Montgomeryville, PA «1893 Tei: 215 6 3 1-9 840 ^M*X«VKÌÌ Ì>y RF & MICROWAVE TRANSiSTORS VHF-UHF CLASS C WIDE BAND « PR£QU£NCY !30 TO 400MHz « » « » 28V 2.5 TO 13.5W VOLTAGE: PO W sH O'J i HiGM POVVf:« GAiN

2N3375

Abstract: TO-210AB
Contextual Info: 2N3375 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3375 Availability Online Store

2n3553

Abstract: 2N3375 2N3632 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666
Contextual Info: File No. 386 n n r p /jn RF Power T ran sisto rs UVAUDZ7U 2N 3375 2N 3553 2N 3632 D ivision3*6 40665 RCA 2N3632, 2N3553, 2N3375, 40665 a n d 40666 are e p ita x ia l silico n n-p-n tra n sis to rs of th e “ ov erlay ’* em itter electro d e co n stru ctio n . T hey are intended for u se in

2N3553

Abstract: 2N3375 WE VQE 23 F 2n3632 transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E
Contextual Info: 41E D • IPHIN 711Qö2b 00EÖ033 1 2N3375 2N3553 2N3632 PHILIPS INTERNATIONAL T - 3 3 - 0 < ? SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metai envelope with the col lector connected to the case. The 2N3375 and the 2N3632 are n-p-n overlay transistors In T 0 -6 0 metal envelopes with the electrodes

2N3375

Abstract: 1035 transistor TRANSISTOR 13-h
Contextual Info: 2N3375 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3375 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHFUHF Region. PACKAGE STYLE TO- 60 ISQLATED FEATURES INCLUDE: • Isolated Package MINIMUM Irvches/nn

C25-28

Abstract: 2N3375 2N3866 2N5916 2N5918 CD2035 CD2337 CD2505 b25-28 BHARAT elek
Contextual Info: m BHARAT ELEK/SEHICOND DI 4?E D OOOOCiia BQI • BELI T ’' 3 3 " I RF DEVICES contd. UHF-225 - 400 MHz 2N3866 2N3375 CD2087/C3-28/ 2N5916 CD2035 CD2505 CD2088/CM10-28/ 2N5918 CD 2089 CD2337 C25-28 CM25-28 CM45-28* C2M-70-28R/ CD4526 C2M60-28/ 2N6439 C2M-100-28*

BM100-28

Abstract: C2528 C25-28 BHARAT elek CD4526 2N6198 BHARAT C2M70-28R CD2035 CM10-28
Contextual Info: BHARAT E L E K / S E H I C O N D m DI 4?E D OOOaDlfl BQI • BELI T ’' 3 3 " / RF DEVICES contd. UHF-225 - 400 MHz 2N3866 2N3375 CD2087/C3-28/ 2N5916 CD2035 CD2505 CD2088/CM10-28/ 2N5918 CD 2089 CD2337 C25-28 CM25-28 CM45-28* C2M-70-28R/ CD4526 C2M60-28/

Contextual Info: 2N3375 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)65 I(C) Max. (A)500m Absolute Max. Power Diss. (W)12 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200# I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)30

Contextual Info: 2N3375 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3375 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHFUHF Region. PACKAGE STYLE TO- 60 ISQLATED FEATURES INCLUDE: • Isolated Package MINIMUM In c h e s / m

2N2876

Abstract: 2n3375 CE 65 M 2n3632 2N4132 TO-37 SPACE POWER ELECTRONICS
Contextual Info: 8440355 SPACE SPACE POWER POWER 89C ELECTRONICS ELECTRONICS 7T RF P O W E R - 2 8 VOLT D 7~-33-o/ 00119 DE~|fi44D3SS D D D D i n • 424 "7437 • ASN <«14 .437 • 046 • 356 7T50" • 375 7455 • 1658 Rated Breakdown Voltages TYPE CASE 2N2876 2N3632

n4300

Abstract: 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N1507 2N3419 2N1711
Contextual Info: Case T ype No. C o n s tru c tio n see note 1 Silicon Transistors M a xim u m R a tin g s a t2 5 °C am b. S P E C IA L C h a ra c te ris tic s FE A T U R E S h h FE V CB V V CE V v EB V •c A 15 2 30 15 2 M in. P to t W mA 0-2 10 50 20 0-2 10 50 20 Max.

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

hybrid car charger inverter schematic diagram

Abstract: toyota prius hp 530 motherboard circuit and solution charge CAPACITOR ELITE 100uf 450V hp laptop charging CIRCUIT diagram car laptop charger schematic hp schematic diagram of laptop motherboard charging circuit l 7803 3V Positive Voltage Regulator APD bias 250v Yuasa EH6
Contextual Info: LINEAR TECHNOLOGY MARCH 2009 IN THIS ISSUE… COVER ARTICLE Battery Stack Monitor Extends Life of Li-Ion Batteries in Hybrid Electric Vehicles .1 Michael Kultgen and Jon Munson Linear in the News… .2 DESIGN FEATURES

ta143

Abstract: Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 an47fa AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic
Contextual Info: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.