2N1711 Search Results

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

2N2389

Abstract: 2N2390 2N1711 Texas Instruments TI424
Contextual Info: TYPES 2N2389, 2N2390 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 4 6 0 2 7 , O C T O B E R 1 9 6 4 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS FROM <0.1 ma to >150 mo, dc to 30 Me Formerly TI424 and TI425 * Electrically Similar to 2N1613 and 2N1711

transistor 2n1711

Abstract: 2N1711 BP317 st 2n1711 "2N1711" 2N1711 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN medium power transistor

2N310B

Abstract: 2N2270
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*

2N1711

Contextual Info: 2N1711 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

transistor 2N1711

Abstract: 2N1711 cdil 2N1711 2N1711 Data Sheet equivalent transistor 2N1711 RS510
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package N-P-N Double Diffused Transistor in a TO-39 Metal Package for a Wide Variety of Applications Such As d.c. and Wideband Amplifiers.

Contextual Info: N AMER P H I L I P S / D I S C R E T E D BSE • T~-2’7~0I bl3S3T31 D O l b n a S ■ Small Signal Devices GENERAL PURPOSE AND SWITCHING TRANSISTORS - NPN TYPES TYPE PKG . bvc eo - te . • ^ /- : *T r >c - i _-iiiln : 2N1613 2N1711 2N1893 2N2218 2N2219

2N2243

Abstract: 2n2405
Contextual Info: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B

2N1711

Abstract: 2N1890 equivalent transistor 2N1711 transistor 2N1711 2N171-1 MIL-PRF-19500/225
Contextual Info: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices Qualified Level 2N1711 JAN JANTX 2N1890 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 1 @ TC = +250C (2)

2N1711

Abstract: 2N956 2N718A X10-4 2N1711N
Contextual Info: 2N718A 2N956 M A X IM U M R ATINGS Rating Symbol 2N718A 2N956 2N1711 CASE 22-03, STYLE 1 TO-18 TO-206AA Unit C o lie ctor-E m itter V o ltage VCER 50 Vdc Collector-Base V o ltage v CBO 75 Vdc E m itter-Base Voltage Ve bo 7.0 3 , 3 C o lle c to r Vdc Total Device D issipation @ TA = 25°C

BC337B

Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA

Contextual Info: 2N1711 SILICON NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 39 The ASI 2N1711 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS IC 1.0 A VCBO 75 V PDISS 800 mW @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C

2N1711 MOTOROLA

Abstract: 2N1711 transistor 2n1711 2N1711 M 2N1711D "2N1711"
Contextual Info: MOTOROLA Order this document by 2N1711/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon 2N1711 COLLECTOR 3 2 BASE 1 EMITTER ARCHIVE INFORMATION Rating Symbol Value Unit Collector – Emitter Voltage VCER 50 Vdc Collector – Base Voltage

Contextual Info: 2N1711 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1711 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE

2N2222 - to-92

Abstract: 2N2222A TO-92 JC547 2n2222 to92 2N2222 2N3904 TO-92 type JC500, Jc501
Contextual Info: Small Signal Leaded Devices General Purpose and Sw itching Transistors - NPN Types bvceo •c c 3 hFE lc Type Pkg (V (mA) min max (mA) 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A 2N3019 2N3020 2N3053 2N3904 2N4123 2N4124

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package N-P-N Double Diffused Transistor in a TO-39 Metal Package for a Wide Variety of Applications Such As d.c. and Wideband Amplifiers.

2n1711s

Abstract: 2N2218S 2N2904S 2N4406 2n4890s 2N4404 2N697S 2N1613S 2N2218AS 2N2219AS
Contextual Info: TO-39 NPN METAL TRANSISTORS AM PLIFIER AND SWITCH Device Type 2N696S 2N697S 2N1613S 2N1711S 2N2218S 2N2218AS 2N2219S 2N2219AS Polarity v CEO V CER+ Vdc NPN NPN NPN NPN NPN NPN NPN NPN 40+ 40 + 50+ 50+ 30 40 30 40 lc max. (mA) 500 800 300 800 800 HpE min. @ IC

Contextual Info: rm. 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U.SA DESCRIPTION 2N1613 2N1711 2N1893 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-6960 NPN Silicon Transistor JEDEC TO-39 case 2N1613, 2N1711, and 2N1893 are S i l i c o n NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications.

2n1711

Contextual Info: 2N1711 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1711 Availability Online Store

transistor npn double

Abstract: TO-39 CASE to ambient 2N1711 D73 transistor
Contextual Info: N AUER PHILIPS/DISCRETE b^E T> • bbS3*131 GD2ÔD73 275 2N1711 SILICON PLANAR TRANSISTOR N-P-N double diffused transistor in a TO-39 metal envelope designed fora wide variety of applications such as d.c. and wideband amplifiers. QUICK REFERENCE DATA Collector-base voltage open emitter

b0345

Abstract: B0815 to-53 TO53 2SC840 KT934V Matsua 2SC840 2S0288
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N1711B 2SC1419 2SC1419 2Nl085 2S0330 2S0331 BSS1S NSOS179 ~~g~~~oo 25 30 SK32SS 2S011S0Y 92GU45A 2S0288 2S0289 KT9340 KT934V B0827-10 ~~~~~~7 35 40 SML5512 SML5902 SML5907 SML5912 ST440 ST450 2S013

2n1711

Contextual Info: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 225 Qualified Level Devices 2N1711 JAN JANTX 2N1890 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 1

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage, RBE < 10Ω Ω

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440