2N956 Search Results

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

2N310B

Abstract: 2N2270
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*

2K1420

Abstract: 2N1507 2n1420
Contextual Info: kmse. ?n637 m w '¿am. m i sua 2N956, 2K1420 2N1&0? 2l\h613. ¿«1711 N-P-N SILICON TRANSISTORS ty p e s B U L L E T IN NO . DL-S 6 9 3 4 7 1 , MAY 1 9 6 3 - R E V I S E D A U G U S T 19 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

2N1420

Abstract: 2N956 2n161 2N1507 2N956 TEXAS INSTRUMENTS 2N731
Contextual Info: TYPES 2N731, 2N956, 2N1420, 2N1S07, N-P-N SILICON TRANSISTORS ¿ U t » ' ? J . U n - B U L L E T IN NO. DL-S 6 9 3 4 7 1 , MAY 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

2N956

Abstract: 2N718A 718a
Contextual Info: 2N718A 2N956 SILICON PLANAR NPN AM PLIFIER S AN D SWITCHES The 2N 718A and 2N 956 are silicon planar epitaxial NPN transistors in Jedec T O -1 8 metal case, intended fo r high-speed switching and am plifier applications. ABSOLUTE M A X IM U M RATINGS VcBO

Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS VCEO Pd IC mW (V) min max (A) IC (mA) VCE(sat) max VCE (V) (V) (A) fT min (MHz) Cob COMPLE­ max MENTARY TYPE (PF) 2N720A 2N721 2N91I 2N956 2N1132 N P N N P TO-18 TO-18 TO-18

2N1711

Abstract: 2N1711 MOTOROLA 2N956 2N956 MOTOROLA 2N3019 2N718 2N718A
Contextual Info: 2N718A 2N956 M AXIMUM RATINGS Rating Symbol Collector-Emitter Voltage 2N718A 2N956 2N1711 VCER 50 Vdc Collector-Base Voltage v CBO 75 Vdc Emitter-Base Voltage v EBO Total Device Dissipation @ Ta = 25°C Derate above 25°C Total Device Dissipation @ Tc = Derate above 25°C

2M1711

Abstract: 2N915 2N1613 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N718A 2N720A
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptal mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 VCE(SAT) hFE0 c h (MHz) ts tOFF IC/IB MNMAX (•A) <V) MAX 50* 80 50 40 40/120 40/50/200 50/200 150 150 10 10

2N1711

Abstract: 2N956 2N1711 M
Contextual Info: 2N718A 2N956 M AXIM UM R A T IN G S Rating Symbol 2N718A 2N956 CASE 22-03, STYLE 1 TO-18 TO-206AA I 2N1711 C ollector-E m itter Voltage VCER 50 Collector-Base Voltage v CBO 75 Em itter-Base Voltage v EBO Unit Vdc 1 7.0 ; Vdc Vdc Total Device D issipation f t T /\ = 25:C

2N1711 MOTOROLA

Abstract: 2n1711 2N956 2N956 MOTOROLA 2n718a
Contextual Info: 2N718A 2N956 M A X IM U M R ATIN G S Rating Symbol 2N718A 2N956 2N1711 Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage v EBO Total Device Dissipation a T ^ = 25°C Derate above 25°C PD Total Device Dissipation

2n1132

Contextual Info: 2N956 For Specifications, See 2N718A Data. MAXIMUM RATINGS _ Rating Symbol 2N1132 2N1132A U nit Collector-Emitter Voltage VcEO 35 40 Vdc Collector-Emitter Voltage Rbe « 10 Ohms VCER <-5 0 - ► Vdo Collector-Base Voltage VcBO 50 60 Vdc

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

BCY59-9

Abstract: bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719 2N720 2N720A
Contextual Info: TO-18 METAL-CAN PACKAGE TRANSISTORS NPN E le c tric a l C h a ra c te ris tic s M a x im u m R a tin g s Typ* N o. VCBO (V) Min V CEO V EBO *CBO (V) Min (V) Min (^A ) Ma ' V CB hFE 0.100 10.0 10.0 10.0 1.20 5.00 0.90 1.30 50 150 15 150.0 10.0 10.0 10.0

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

MPS9468

Abstract: MPS948 MPS9418 TO92A mps434 2n150
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS TYPE NO. POLA­ RITY CASE MPS6591 MPS8000 MPS9416 MPS9416A MPS9417 N N N N N MPS9417A MPS9418 MPS9434 MPS9466 MPS9466A H,'E VcEinft lc COMPLE­ C* fj mm mas MENTARY MHz (MHz) TYPE Pd Ic v CE0 (mW) (A)

2n2846

Abstract: 2N3015 2n2224 MOTOROLA 2n2218 TRANSISTOR 2n2848 2N2222A motorola 2C2222A MPS8092 2N4401 die 2n3116
Contextual Info: 34 M O T O R O L A SC -CDIODES/OPTO} 1 D • t,3fc,7S55 0 0 3 7 ^ 7 4 34C 37974 7"-3r- /S SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A — DIE NO. NPN LINE SOURCE — DMB101 This die provides performance similar to that of the following device types:

Contextual Info: TYPES ¿Nfnifi ? n m . vNv.ii / f u m m m U i i , 2N1613, j n t j h N-P-N SILICON TRANSISTORS n z 1} B U L L E T IN NO. D L-S 693471, M A Y 1 9 6 3 - R E V I S E D A U G U S T 1969 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

2n697

Abstract: 2N956 2N2905
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) V CEO h FE Coi Cob V CE(sat) h ^off PD PF MHz ns Ta 25°C MAX MIN MAX mW 250 285 800 3.0 TO-5

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information

2n11

Abstract: 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1420 2N910 2N911
Contextual Info: CENTRAL SEMICONDUCTOR _1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR ti DE J n ñ n b 3 0 0 0 0 2 1 5 □ J f * 6 1 C 0 0 2 1 5 T >3 $ - ó ¡ NPN - METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. VCB VCE Veb V V V min hFE at *c VC E max mA V V 10 10 . 10

1040B

Abstract: 2N3910 svt6062 2n5100
Contextual Info: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.

MMBF4856

Abstract: BC237 bf244 BC177 pnp transistor BF245 motorola MMBT8599L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor MPQ3906 PNP Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage